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Kuan, T. S., Chang, C.‐A. (1983) Electron microscope studies of a Ge–GaAs superlattice grown by molecular beam epitaxy. Journal of Applied Physics, 54 (8). 4408-4413 doi:10.1063/1.332688

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Reference TypeJournal (article/letter/editorial)
TitleElectron microscope studies of a Ge–GaAs superlattice grown by molecular beam epitaxy
JournalJournal of Applied Physics
AuthorsKuan, T. S.Author
Chang, C.‐A.Author
Year1983 (August)Volume54
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.332688Search in ResearchGate
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Mindat Ref. ID5018129Long-form Identifiermindat:1:5:5018129:8
GUID0
Full ReferenceKuan, T. S., Chang, C.‐A. (1983) Electron microscope studies of a Ge–GaAs superlattice grown by molecular beam epitaxy. Journal of Applied Physics, 54 (8). 4408-4413 doi:10.1063/1.332688
Plain TextKuan, T. S., Chang, C.‐A. (1983) Electron microscope studies of a Ge–GaAs superlattice grown by molecular beam epitaxy. Journal of Applied Physics, 54 (8). 4408-4413 doi:10.1063/1.332688
In(1983, August) Journal of Applied Physics Vol. 54 (8) AIP Publishing

See Also

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Chang, Chin‐An, Chu, Wei‐Kan (1983) Channeling studies of Ge‐GaAs superlattices grown by molecular beam epitaxy. Applied Physics Letters, 42 (5). 463-465 doi:10.1063/1.93971
Chang, Chin‐An, Serrano, C. M., Chang, L. L., Esaki, L. (1980) Studies by cross‐sectional transmission electron microscope of InAs grown by molecular beam epitaxy on GaAs substrates. Applied Physics Letters, 37 (6). 538-540 doi:10.1063/1.91977
Chang, Chin‐An (1982) Interface morphology studies of (110) and (111) Ge‐GaAs grown by molecular beam epitaxy. Applied Physics Letters, 40 (12). 1037-1039 doi:10.1063/1.92987
Kuan, T. S., Batson, P. E., Jackson, T. N., Rupprecht, H., Wilkie, E. L. (1983) Electron microscope studies of an alloyed Au/Ni/Au‐Ge ohmic contact to GaAs. Journal of Applied Physics, 54 (12). 6952-6957 doi:10.1063/1.332011
Cheng, T. M., Chang, C. Y., Chang, T. C., Huang, J. H., Huang, M. F. (1994) High‐resolution x‐ray characterization of low‐temperature GaAs/As superlattice grown by molecular‐beam epitaxy. Applied Physics Letters, 64 (26). 3626-3628 doi:10.1063/1.111225
Rajkumar, K. C., Chen, P., Madhukar, A. (1991) ‘‘A transmission electron microscope study of twin structure in GaAs/GaAs (111)B grown via molecular‐beam epitaxy’’. Journal of Applied Physics, 69 (4). 2219-2223 doi:10.1063/1.348699
Iwamura, Hidetoshi, Saku, Tadashi, Kobayashi, Hideki, Horikoshi, Yoshiji (1983) Spectrum studies on a GaAs‐AlGaAs multi‐quantum‐well laser diode grown by molecular beam epitaxy. Journal of Applied Physics, 54 (5). 2692-2695 doi:10.1063/1.332292
Andrews, D. A., Heckingbottom, R., Davies, G. J. (1983) The influence of growth conditions on sulfur incorporation in GaAs grown by molecular beam epitaxy. Journal of Applied Physics, 54 (8). 4421-4425 doi:10.1063/1.332636
Blood, P., Fletcher, E. D., Foxon, C. T. (1988) Short‐period (AlAs)(GaAs) superlattice lasers grown by molecular beam epitaxy. Applied Physics Letters, 53 (4). 299-301 doi:10.1063/1.99901
Huang, D., Agarwala, S., Morkoç, H. (1989) Photoluminescence studies of GaAs grown on InP substrates by molecular beam epitaxy. Applied Physics Letters, 54 (1). 51-53 doi:10.1063/1.100832
Lin, S. D., Lin, Z. C., Lee, C. P. (2006) Transmission electron microscopy studies of GaAs nanostructures in InGaAs∕InP matrix grown by molecular beam epitaxy. Journal of Applied Physics, 100 (5). 54312pp. doi:10.1063/1.2345031
 
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