Vote for your favorite mineral in #MinCup25! - Sanidine vs. Hematite
It's a pair of often-overlooked classics as potassium feldspar sanidine competes with iron ore hematite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Lin, S. D., Lin, Z. C., Lee, C. P. (2006) Transmission electron microscopy studies of GaAs nanostructures in InGaAs∕InP matrix grown by molecular beam epitaxy. Journal of Applied Physics, 100 (5). 54312pp. doi:10.1063/1.2345031

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleTransmission electron microscopy studies of GaAs nanostructures in InGaAs∕InP matrix grown by molecular beam epitaxy
JournalJournal of Applied Physics
AuthorsLin, S. D.Author
Lin, Z. C.Author
Lee, C. P.Author
Year2006 (September)Volume100
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.2345031Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5143790Long-form Identifiermindat:1:5:5143790:9
GUID0
Full ReferenceLin, S. D., Lin, Z. C., Lee, C. P. (2006) Transmission electron microscopy studies of GaAs nanostructures in InGaAs∕InP matrix grown by molecular beam epitaxy. Journal of Applied Physics, 100 (5). 54312pp. doi:10.1063/1.2345031
Plain TextLin, S. D., Lin, Z. C., Lee, C. P. (2006) Transmission electron microscopy studies of GaAs nanostructures in InGaAs∕InP matrix grown by molecular beam epitaxy. Journal of Applied Physics, 100 (5). 54312pp. doi:10.1063/1.2345031
In(2006, September) Journal of Applied Physics Vol. 100 (5) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Liu, D. G., Fan, J. C., Lee, C. P., Chang, K. H., Liou, D. C. (1993) Transmission electron microscopy study of heavily delta‐doped GaAs grown by molecular beam epitaxy. Journal of Applied Physics, 73 (2). 608-614 doi:10.1063/1.353370
Decobert, Jean, Patriarche, Gilles (2002) Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy. Journal of Applied Physics, 92 (10). 5749-5755 doi:10.1063/1.1513891
Petruzzello, J., Olego, D. J., Chu, X., Faurie, J. P. (1988) Transmission electron microscopy of (001) ZnTe on (001) GaAs grown by molecular‐beam epitaxy. Journal of Applied Physics, 63 (5). 1783-1785 doi:10.1063/1.339920
Reno, J. L., Carr, M. J., Gourley, P. L. (1990) Transmission electron microscopy study of CdTe(111) grown on GaAs(100) by molecular‐beam epitaxy. Journal of Applied Physics, 67 (9). 4114-4117 doi:10.1063/1.344971
Vandenberg, J. M., Chu, S. N. G., Hamm, R. A., Panish, M. B., Temkin, H. (1986) High‐resolution x‐ray diffraction and transmission electron microscopy studies of InGaAs/InP superlattices grown by gas‐source molecular beam epitaxy. Applied Physics Letters, 49 (19). 1302-1304 doi:10.1063/1.97393
Chin, T. P., Hou, H. Q., Tu, C. W., Chang, J. C. P., Otsuka, N. (1994) InGaAs/InP and InAsP/InP quantum well structures on GaAs (100) with a linearly graded InGaP buffer layer grown by gas‐source molecular beam epitaxy. Applied Physics Letters, 64 (15). 2001-2003 doi:10.1063/1.111719
Huang, D., Agarwala, S., Morkoç, H. (1989) Photoluminescence studies of GaAs grown on InP substrates by molecular beam epitaxy. Applied Physics Letters, 54 (1). 51-53 doi:10.1063/1.100832
Lee, T. P., Burrus, C. A., Cho, A. Y., Cheng, K. Y., Manchon, D. D. (1980) Zn‐diffused back‐illuminated p‐i‐n photodiodes in InGaAs/InP grown by molecular‐beam epitaxy. Applied Physics Letters, 37 (8). 730-731 doi:10.1063/1.92061
Ferrari, C., Franzosi, P., Gastaldi, L., Taiariol, F. (1988) Crystal quality investigation of InGaAs/InP and InGaAlAs/InP single heterostructures grown by molecular‐beam epitaxy. Journal of Applied Physics, 63 (8). 2628-2632 doi:10.1063/1.341001
Kuan, T. S., Chang, C.‐A. (1983) Electron microscope studies of a Ge–GaAs superlattice grown by molecular beam epitaxy. Journal of Applied Physics, 54 (8). 4408-4413 doi:10.1063/1.332688
Lin, S. D., Lee, C. P., Hsieh, W. H., Suen, Y. W. (2002) Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates. Applied Physics Letters, 81 (16). 3007-3009 doi:10.1063/1.1515878
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 7, 2025 22:56:32
Go to top of page