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Hurd, C. M., McAlister, S. P., McKinnon, W. R., Stewart, B. R., Day, D. J., Mandeville, P., SpringThorpe, A. J. (1988) Modeling parallel conduction in GaAs/AlxGa1−xAs heterostructures. Journal of Applied Physics, 63 (9). 4706-4713 doi:10.1063/1.340126

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Reference TypeJournal (article/letter/editorial)
TitleModeling parallel conduction in GaAs/AlxGa1−xAs heterostructures
JournalJournal of Applied Physics
AuthorsHurd, C. M.Author
McAlister, S. P.Author
McKinnon, W. R.Author
Stewart, B. R.Author
Day, D. J.Author
Mandeville, P.Author
SpringThorpe, A. J.Author
Year1988 (May)Volume63
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.340126Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5036006Long-form Identifiermindat:1:5:5036006:2
GUID0
Full ReferenceHurd, C. M., McAlister, S. P., McKinnon, W. R., Stewart, B. R., Day, D. J., Mandeville, P., SpringThorpe, A. J. (1988) Modeling parallel conduction in GaAs/AlxGa1−xAs heterostructures. Journal of Applied Physics, 63 (9). 4706-4713 doi:10.1063/1.340126
Plain TextHurd, C. M., McAlister, S. P., McKinnon, W. R., Stewart, B. R., Day, D. J., Mandeville, P., SpringThorpe, A. J. (1988) Modeling parallel conduction in GaAs/AlxGa1−xAs heterostructures. Journal of Applied Physics, 63 (9). 4706-4713 doi:10.1063/1.340126
In(1988, May) Journal of Applied Physics Vol. 63 (9) AIP Publishing

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Hurd, C. M., McAlister, S. P., McKinnon, W. R., Falt, C. E., Day, D. J., Miner, C. J., SpringThorpe, A. J. (1987) Conduction in illuminated GaAs/AlxGa1−xAs heterostructures. I. Experiment. Journal of Applied Physics, 61 (6). 2244-2249 doi:10.1063/1.338946
McKinnon, W. R., Hurd, C. M. (1987) Conduction in illuminated GaAs/AlxGa1−xAs heterostructures. II. Calculation. Journal of Applied Physics, 61 (6). 2250-2256 doi:10.1063/1.337986
Li, Z.‐M., McAlister, S. P., Hurd, C. M. (1989) The isolated layer model and transfer impedances for AlxGa1−xAs/GaAs heterostructures. Journal of Applied Physics, 66 (3). 1500-1503 doi:10.1063/1.344410
Hurd, C. M., McAlister, S. P., McKinnon, W. R., Day, D. J. (1989) Effect of illumination on the tunneling conductance of high‐electron‐mobility structures. Journal of Applied Physics, 65 (12). 5170-5176 doi:10.1063/1.343145
Day, D. J., Trudeau, M., McAlister, S. P., Hurd, C. M. (1988) Noise voltage and instability in GaAs devices. Applied Physics Letters, 52 (24). 2034-2036 doi:10.1063/1.99573
Hurd, C. M., McAlister, S. P., Day, D. J., Sitch, J. (1988) Modeling photoexcitable donors in one‐dimensional unipolar structures. Journal of Applied Physics, 64 (10). 5225-5229 doi:10.1063/1.342407
Kirtley, J. R., Theis, T. N., Mooney, P. M., Wright, S. L. (1988) Noise spectroscopy of deep level (DX) centers in GaAs‐AlxGa1−xAs heterostructures. Journal of Applied Physics, 63 (5). 1541-1548 doi:10.1063/1.339938
Li, Z.‐M., McAlister, S. P. (1989) Conformal mapping and the current distributions in AlxGa1−xAs/GaAs heterostructures. Journal of Applied Physics, 66 (2). 680-685 doi:10.1063/1.343537
Chia, C. K., David, J. P. R., Rees, G. J., Plimmer, S. A., Grey, R., Robson, P. N. (1998) Impact ionization in AlxGa1−xAs/GaAs single heterostructures. Journal of Applied Physics, 84 (8). 4363-4369 doi:10.1063/1.368656
Chia, C. K., David, J. P. R., Rees, G. J., Robson, P. N., Plimmer, S. A., Grey, R. (1997) Electron multiplication in AlxGa1−xAs/GaAs heterostructures. Applied Physics Letters, 71 (26). 3877-3879 doi:10.1063/1.120531
Li, Z. ‐M., McAlister, S. P., McMullan, W. G., Hurd, C. M., Day, D. J. (1990) Impact ionization of deep traps in semi‐insulating GaAs substrates. Journal of Applied Physics, 67 (12). 7368-7372 doi:10.1063/1.344523
 
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