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Day, D. J., Trudeau, M., McAlister, S. P., Hurd, C. M. (1988) Noise voltage and instability in GaAs devices. Applied Physics Letters, 52 (24). 2034-2036 doi:10.1063/1.99573

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Reference TypeJournal (article/letter/editorial)
TitleNoise voltage and instability in GaAs devices
JournalApplied Physics Letters
AuthorsDay, D. J.Author
Trudeau, M.Author
McAlister, S. P.Author
Hurd, C. M.Author
Year1988 (June 13)Volume52
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.99573Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8483349Long-form Identifiermindat:1:5:8483349:3
GUID0
Full ReferenceDay, D. J., Trudeau, M., McAlister, S. P., Hurd, C. M. (1988) Noise voltage and instability in GaAs devices. Applied Physics Letters, 52 (24). 2034-2036 doi:10.1063/1.99573
Plain TextDay, D. J., Trudeau, M., McAlister, S. P., Hurd, C. M. (1988) Noise voltage and instability in GaAs devices. Applied Physics Letters, 52 (24). 2034-2036 doi:10.1063/1.99573
In(1988, June) Applied Physics Letters Vol. 52 (24) AIP Publishing

See Also

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Day, D. J., Trudeau, M., McAlister, S. P., Hurd, C. M. (1989) Instability and gate voltage noise in GaAs metal-semiconductor field-effect transistors. Canadian Journal of Physics, 67. 238-241 doi:10.1139/p89-042
Li, Z.‐M., McAlister, S. P., McMullan, W. G., Hurd, C. M., Day, D. J. (1990) Current‐controlled negative differential conductivity in semi‐insulating GaAs. Applied Physics Letters, 56 (23). 2331-2332 doi:10.1063/1.102910
Hurd, C. M., McAlister, S. P., McKinnon, W. R., Stewart, B. R., Day, D. J., Mandeville, P., SpringThorpe, A. J. (1988) Modeling parallel conduction in GaAs/AlxGa1−xAs heterostructures. Journal of Applied Physics, 63 (9). 4706-4713 doi:10.1063/1.340126
Hurd, C. M., McAlister, S. P., Day, D. J., Sitch, J. (1988) Modeling photoexcitable donors in one‐dimensional unipolar structures. Journal of Applied Physics, 64 (10). 5225-5229 doi:10.1063/1.342407
Li, Z. ‐M., McAlister, S. P., McMullan, W. G., Hurd, C. M., Day, D. J. (1990) Impact ionization of deep traps in semi‐insulating GaAs substrates. Journal of Applied Physics, 67 (12). 7368-7372 doi:10.1063/1.344523
Hurd, C. M., McAlister, S. P., McKinnon, W. R., Falt, C. E., Day, D. J., Miner, C. J., SpringThorpe, A. J. (1987) Conduction in illuminated GaAs/AlxGa1−xAs heterostructures. I. Experiment. Journal of Applied Physics, 61 (6). 2244-2249 doi:10.1063/1.338946
Hurd, C. M., McAlister, S. P., McKinnon, W. R., Day, D. J. (1989) Effect of illumination on the tunneling conductance of high‐electron‐mobility structures. Journal of Applied Physics, 65 (12). 5170-5176 doi:10.1063/1.343145
Hurd, C. M., Shiozaki, I., McAlister, S. P. (1981) Low‐field galvanomagnetic properties of nickel. Journal of Applied Physics, 52 (3). 2214-2216 doi:10.1063/1.328882
Li, Z.‐M., McAlister, S. P., Hurd, C. M. (1989) The isolated layer model and transfer impedances for AlxGa1−xAs/GaAs heterostructures. Journal of Applied Physics, 66 (3). 1500-1503 doi:10.1063/1.344410
Keller, U., Diamond, S. K., Auld, B. A., Bloom, D. M. (1988) Noninvasive optical probe of free charge and applied voltage in GaAs devices. Applied Physics Letters, 53 (5). 388-390 doi:10.1063/1.99887
McAlister, S. P., Hurd, C. M. (1979) Hall effect in 3d-transition metals and alloys (invited). Journal of Applied Physics, 50. 7526pp. doi:10.1063/1.326888
 
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