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Jiménez, J., Alvárez, A., Gonzalez, M. A., Bonnafé, J. (1989) 0.8 eV excitation of the quenched EL2* level in semi‐insulating GaAs. Journal of Applied Physics, 66 (5). 2221-2222 doi:10.1063/1.344274

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Reference TypeJournal (article/letter/editorial)
Title0.8 eV excitation of the quenched EL2* level in semi‐insulating GaAs
JournalJournal of Applied Physics
AuthorsJiménez, J.Author
Alvárez, A.Author
Gonzalez, M. A.Author
Bonnafé, J.Author
Year1989 (September)Volume66
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.344274Search in ResearchGate
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Mindat Ref. ID5042337Long-form Identifiermindat:1:5:5042337:0
GUID0
Full ReferenceJiménez, J., Alvárez, A., Gonzalez, M. A., Bonnafé, J. (1989) 0.8 eV excitation of the quenched EL2* level in semi‐insulating GaAs. Journal of Applied Physics, 66 (5). 2221-2222 doi:10.1063/1.344274
Plain TextJiménez, J., Alvárez, A., Gonzalez, M. A., Bonnafé, J. (1989) 0.8 eV excitation of the quenched EL2* level in semi‐insulating GaAs. Journal of Applied Physics, 66 (5). 2221-2222 doi:10.1063/1.344274
In(1989, September) Journal of Applied Physics Vol. 66 (5) AIP Publishing

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Chafai, M., Jiménez, J., Alvárez, A., Bonnafé, J. (1992) Photocurrent study of the influence of photogenerated carriers on the EL2*‐EL2 transformation in semi‐insulating GaAs. Applied Physics Letters, 60 (10). 1253-1255 doi:10.1063/1.107421
Jiménez, J., Alvárez, A., Bonnafé, J., Murin, L. I. (1989) Optical excitation of the metastable EL2/emph>level. Physical Review B, 39 (18) 13310-13315 doi:10.1103/physrevb.39.13310
Alvarez, A., Jiménez, J., González, M. A. (1996) Metastable transformation of EL2 in semi‐insulating GaAs: The role of the actuator level and the photoionization of EL2. Applied Physics Letters, 68 (21). 2959-2961 doi:10.1063/1.116368
Jiménez, J., González, M. A., Hernández, P., de Saja, J. A., Bonnafé, J. (1985) Optically enhanced defect reactions in semi‐insulating bulk GaAs. Journal of Applied Physics, 57 (4). 1152-1160 doi:10.1063/1.334560
Jiménez, J., Hernández, P., de Saja, J. A., Bonnafé, J. (1985) Optical quenching of the near‐intrinsic photocurrent in semi‐insulating bulk GaAs. Journal of Applied Physics, 57 (12). 5290-5294 doi:10.1063/1.334844
Alvarez, A., Jiménez, J., González, M. A., Sanz, L. F. (1997) Temperature dependence of the photoquenching of EL2 in semi-insulating GaAs. Applied Physics Letters, 70 (23). 3131-3133 doi:10.1063/1.119111
Jiménez, Juan, Alvárez, Alejandro, Bonnafé, Jacques (1990) Optically induced excess hole population in semi-insulating GaAs. Physical Review B, 42 (18) 11762-11767 doi:10.1103/physrevb.42.11762
Jimenez, J., Alvarez, A., Gonzalez, M. A., Bonnafé, J., Saja, J. A. de (1988) Optical Quenching of the Extrinsic Light Induced Enhanced Photocurrent in Semi-Insulating GaAs. Japanese Journal of Applied Physics, 27. 1841-1844 doi:10.1143/jjap.27.1841
Mitchel, W. C., Jiménez, J. (1994) Photocurrent transients in semi‐insulating GaAs, effects of EL2 and other defects. Journal of Applied Physics, 75 (6). 3060-3070 doi:10.1063/1.356154
Blakemore, J. S., Sargent, L., Tang, R‐S., Swiggard, E. M. (1989) Assessment of the ionized EL2 fraction in semi‐insulating GaAs. Applied Physics Letters, 54 (21). 2106-2108 doi:10.1063/1.101163
Brozel, M. R., Grant, I., Ware, R. M., Stirland, D. J. (1983) Direct observation of the principal deep level (EL2) in undoped semi‐insulating GaAs. Applied Physics Letters, 42 (7). 610-612 doi:10.1063/1.94019
 
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