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Blakemore, J. S., Sargent, L., Tang, R‐S., Swiggard, E. M. (1989) Assessment of the ionized EL2 fraction in semi‐insulating GaAs. Applied Physics Letters, 54 (21). 2106-2108 doi:10.1063/1.101163

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Reference TypeJournal (article/letter/editorial)
TitleAssessment of the ionized EL2 fraction in semi‐insulating GaAs
JournalApplied Physics Letters
AuthorsBlakemore, J. S.Author
Sargent, L.Author
Tang, R‐S.Author
Swiggard, E. M.Author
Year1989 (May 22)Volume54
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.101163Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8486753Long-form Identifiermindat:1:5:8486753:3
GUID0
Full ReferenceBlakemore, J. S., Sargent, L., Tang, R‐S., Swiggard, E. M. (1989) Assessment of the ionized EL2 fraction in semi‐insulating GaAs. Applied Physics Letters, 54 (21). 2106-2108 doi:10.1063/1.101163
Plain TextBlakemore, J. S., Sargent, L., Tang, R‐S., Swiggard, E. M. (1989) Assessment of the ionized EL2 fraction in semi‐insulating GaAs. Applied Physics Letters, 54 (21). 2106-2108 doi:10.1063/1.101163
In(1989, May) Applied Physics Letters Vol. 54 (21) AIP Publishing

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Tang, R.‐S., Sargent, L., Blakemore, J. S., Swiggard, E. M. (1990) Properties of semi‐insulating GaAs grown by a vertical molten zone method. Journal of Applied Physics, 67 (2). 852-858 doi:10.1063/1.345742
Tang, R‐S., Sargent, L., Blakemore, J. S. (1989) Compensation assessment in ‘‘undoped’’ high‐resistivity GaAs. Journal of Applied Physics, 66 (1). 256-261 doi:10.1063/1.343866
Ferrini, R., Galli, M., Guizzetti, G., Patrini, M., Nava, F., Canali, C., Vanni, P. (1997) Optical evaluation of the ionized EL2 fraction in proton (24 GeV) irradiated semi-insulating GaAs. Applied Physics Letters, 71 (21). 3084-3086 doi:10.1063/1.120253
Gray, M. L., Peterson, L., Tang, R‐S., Saban, S. B., Blakemore, J. S. (1993) Iron doped bulk semi‐insulating GaAs. Journal of Applied Physics, 73 (7). 3319-3325 doi:10.1063/1.352981
Gray, M. L., Sargent, L., Blakemore, J. S., Parsey, J. M., Clemans, J. E. (1988) EL2 distributions in vertical gradient freeze GaAs crystals. Journal of Applied Physics, 63 (12). 5689-5693 doi:10.1063/1.340304
Brierley, Steven K., Lehr, Deborah S. (1989) Full‐wafer mapping of total and ionized EL2 concentration in semi‐insulating GaAs using infrared absorption. Applied Physics Letters, 55 (23). 2426-2428 doi:10.1063/1.102015
Dobrilla, P., Blakemore, J. S. (1986) Distributions of residual stress, dislocations, and EL2 in Czochralski‐grown semi‐insulating GaAs. Journal of Applied Physics, 60 (1). 169-176 doi:10.1063/1.337670
Tang, R.-S., Sargent, L., Blakemore, J.S., Swiggard, E.M. (1990) Characterization and mapping of semi-insulating GaAs crystals grown by vertical zone melting and by vertical zone refining. Journal of Crystal Growth, 103 (1). 323-329 doi:10.1016/0022-0248(90)90206-z
Sargent, L., Blakemore, J. S. (1989) Temperature dependence of local vibrational mode optical absorption for carbon acceptors in GaAs. Applied Physics Letters, 54 (11). 1013-1015 doi:10.1063/1.100783
Gray, M. L., Sargent, L., Burke, K. M., Grim, K. A., Blakemore, J. S. (1988) An evaluation of horizontal Bridgman‐grown, undoped, semi‐insulating GaAs. Journal of Applied Physics, 63 (9). 4413-4417 doi:10.1063/1.340185
Tang, R.‐S., Blakemore, J. S., Kremer, R. E., Burke, K. M. (1989) Undoped semi‐insulating GaAs grown by a vertical Bridgman method: Electrical property analysis using a simple ambipolar correction. Journal of Applied Physics, 66 (11). 5428-5434 doi:10.1063/1.343691
 
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