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Brierley, Steven K., Lehr, Deborah S. (1989) Full‐wafer mapping of total and ionized EL2 concentration in semi‐insulating GaAs using infrared absorption. Applied Physics Letters, 55 (23). 2426-2428 doi:10.1063/1.102015

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Reference TypeJournal (article/letter/editorial)
TitleFull‐wafer mapping of total and ionized EL2 concentration in semi‐insulating GaAs using infrared absorption
JournalApplied Physics Letters
AuthorsBrierley, Steven K.Author
Lehr, Deborah S.Author
Year1989 (December 4)Volume55
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.102015Search in ResearchGate
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Mindat Ref. ID8488748Long-form Identifiermindat:1:5:8488748:5
GUID0
Full ReferenceBrierley, Steven K., Lehr, Deborah S. (1989) Full‐wafer mapping of total and ionized EL2 concentration in semi‐insulating GaAs using infrared absorption. Applied Physics Letters, 55 (23). 2426-2428 doi:10.1063/1.102015
Plain TextBrierley, Steven K., Lehr, Deborah S. (1989) Full‐wafer mapping of total and ionized EL2 concentration in semi‐insulating GaAs using infrared absorption. Applied Physics Letters, 55 (23). 2426-2428 doi:10.1063/1.102015
In(1989, December) Applied Physics Letters Vol. 55 (23) AIP Publishing

See Also

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Brierley, Steven K., Hendriks, Henry T. (1990) On‐wafer correlation between total EL2 concentration, shallow acceptor concentration, and Hall properties in semi‐insulating GaAs. Journal of Applied Physics, 67 (10). 6306-6308 doi:10.1063/1.345148
Brierley, Steven K., Lehr, Deborah S. (1990) Correlation between the photoreflectance impurity peak in semi‐insulating GaAs and the bulk acceptor concentration. Journal of Applied Physics, 67 (8). 3878-3880 doi:10.1063/1.344988
Brierley, Steven K., Lehr, Deborah S., Grabinski, Alek K. (1988) Implant‐dose mapping using infrared transmission. Journal of Applied Physics, 63 (10). 5085-5087 doi:10.1063/1.340407
Zach, F. X., Winnacker, A. (1989) Optical Mapping of the Total EL2-Concentration in Semi-Insulating GaAs-Wafers. Japanese Journal of Applied Physics, 28. 957-960 doi:10.1143/jjap.28.957
Blakemore, J. S., Sargent, L., Tang, R‐S., Swiggard, E. M. (1989) Assessment of the ionized EL2 fraction in semi‐insulating GaAs. Applied Physics Letters, 54 (21). 2106-2108 doi:10.1063/1.101163
Dischler, B., Fuchs, F., Kaufmann, U. (1986) Photoresponse of the EL2 absorption in undoped semi‐insulating GaAs. Applied Physics Letters, 48 (19). 1282-1284 doi:10.1063/1.97004
Song, Chunying, Ge, Weikun, Jiang, Desheng, Hsu, Chenchia (1987) Pair of local vibration mode absorption bands related to EL2 defects in semi‐insulating GaAs. Applied Physics Letters, 50 (23). 1666-1668 doi:10.1063/1.97762
Kabiraj, D., Ghosh, Subhasis (2005) “EL2” revisited: Observation of metastable and stable energy levels of EL2 in semi-insulating GaAs. Applied Physics Letters, 87 (25). 252118pp. doi:10.1063/1.2150579
Wang, Faa‐Ching (1986) Characterization of EL2 distribution on semi‐insulating GaAs wafer by optically assisted imperfection profile. Journal of Applied Physics, 59 (11). 3737-3742 doi:10.1063/1.336758
Walukiewicz, W., Lagowski, J., Gatos, H. C. (1983) On the optical evaluation of the EL2 deep level concentration in semi‐insulating GaAs. Applied Physics Letters, 43 (2). 192-194 doi:10.1063/1.94277
Kabiraj, D., Ghosh, Subhasis (2004) EL2-related metastable defects in semi-insulating GaAs. Applied Physics Letters, 84 (10). 1713-1715 doi:10.1063/1.1667617
 
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