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Meikle, Scott, Nomura, Hideaki, Nakanishi, Yoichiro, Hatanaka, Yoshinori (1990) Reactions of atomic nitrogen and trimethyl aluminum downstream from a nitrogen microwave plasma. Journal of Applied Physics, 67 (1). 483-486 doi:10.1063/1.345229

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Reference TypeJournal (article/letter/editorial)
TitleReactions of atomic nitrogen and trimethyl aluminum downstream from a nitrogen microwave plasma
JournalJournal of Applied Physics
AuthorsMeikle, ScottAuthor
Nomura, HideakiAuthor
Nakanishi, YoichiroAuthor
Hatanaka, YoshinoriAuthor
Year1990 (January)Volume67
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.345229Search in ResearchGate
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Mindat Ref. ID5043417Long-form Identifiermindat:1:5:5043417:2
GUID0
Full ReferenceMeikle, Scott, Nomura, Hideaki, Nakanishi, Yoichiro, Hatanaka, Yoshinori (1990) Reactions of atomic nitrogen and trimethyl aluminum downstream from a nitrogen microwave plasma. Journal of Applied Physics, 67 (1). 483-486 doi:10.1063/1.345229
Plain TextMeikle, Scott, Nomura, Hideaki, Nakanishi, Yoichiro, Hatanaka, Yoshinori (1990) Reactions of atomic nitrogen and trimethyl aluminum downstream from a nitrogen microwave plasma. Journal of Applied Physics, 67 (1). 483-486 doi:10.1063/1.345229
In(1990, January) Journal of Applied Physics Vol. 67 (1) AIP Publishing

See Also

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Nomura, Hideaki, Meikle, Scott, Nakanishi, Yoichiro, Hatanaka, Yoshinori (1991) Remote plasma deposition of aluminum nitride. Journal of Applied Physics, 69 (2). 990-993 doi:10.1063/1.348918
Meikle, Scott, Hatanaka, Yoshinori (1989) Measurements of the atomic nitrogen population produced by a microwave electron cyclotron resonance plasma. Applied Physics Letters, 54 (17). 1648-1649 doi:10.1063/1.101311
Matsumoto, Akinori, Meikle, Scott, Nakanishi, Yoichiro, Hatanaka, Yoshinori (1992) Deposition of Aluminum Nitride by Remote Plasma-Enhanced Chemical Vapor Deposition Using Triisobutyle Aluminum. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l423
Meikle, Scott, Nakanishi, Yoichiro, Hatanaka, Yoshinori (1990) The Role of Hydrogen Atoms in Afterglow Deposition of Silicon Thin Films. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l2130
Meikle, Scott, Hatanaka, Yoshinori (1990) Pressure‐dependent transition in the mechanism of remote plasma SiNxdeposition. Applied Physics Letters, 57 (8). 762-764 doi:10.1063/1.104259
Meikle, Scott, Suzuki, Yoshiko, Hatanaka, Yoshinori (1990) The role of hydrogen dilution in deposition ofa‐SiC:H from silane/ethylene mixtures. Journal of Applied Physics, 67 (2). 1048-1050 doi:10.1063/1.345789
Suzuki, Yoshiko, Meikle, Scott, Fukuda, Yasuo, Hatanaka, Yoshinori (1990) XPS Studies of a-Si1-xCx:H Prepared from C2H4/SiH4Gas Mixtures. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l663
Sowa, Kunihiro, Tanabe, Masami, Nakanishi, Yoichiro, Hatanaka, Yoshinori (1990) Structure and Luminescent Property of Y2O2S:Eu Thin Films Prepared by Magnetron Sputtering. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l2077
Wickramanayaka, Sunil, Matsumoto, Akinori, Nakanishi, Yoichiro, Hosokawa, Naokichi, Hatanaka, Yoshinori (1994) Remote PlasmaSiO2Deposition by Tetraethoxysilane with Chemically and Energetically Different Atomic Species. Japanese Journal of Applied Physics, 33. 3520-3527 doi:10.1143/jjap.33.3520
Wickramanayaka, Sunil, Meikle, S., Sekiguchi, A., Hosokawa, M., Hatanaka, Y. (1991) Characterization of thermodynamically non‐equilibrium high‐temperature oxygen plasma downstream region. Journal of Applied Physics, 69 (9). 6340-6342 doi:10.1063/1.348833
Xu, Ying-Yu, Ogishima, Takuya, Korzec, Dariusz, Nakanishi, Yoichiro, Hatanaka, Yoshinori (1999) Deposition of SiNxThin Film Using µ-SLAN Surface Wave Plasma Source. Japanese Journal of Applied Physics, 38. 4538-4541 doi:10.1143/jjap.38.4538
 
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