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Meikle, Scott, Hatanaka, Yoshinori (1989) Measurements of the atomic nitrogen population produced by a microwave electron cyclotron resonance plasma. Applied Physics Letters, 54 (17). 1648-1649 doi:10.1063/1.101311

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Reference TypeJournal (article/letter/editorial)
TitleMeasurements of the atomic nitrogen population produced by a microwave electron cyclotron resonance plasma
JournalApplied Physics Letters
AuthorsMeikle, ScottAuthor
Hatanaka, YoshinoriAuthor
Year1989 (April 24)Volume54
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.101311Search in ResearchGate
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Mindat Ref. ID8486384Long-form Identifiermindat:1:5:8486384:7
GUID0
Full ReferenceMeikle, Scott, Hatanaka, Yoshinori (1989) Measurements of the atomic nitrogen population produced by a microwave electron cyclotron resonance plasma. Applied Physics Letters, 54 (17). 1648-1649 doi:10.1063/1.101311
Plain TextMeikle, Scott, Hatanaka, Yoshinori (1989) Measurements of the atomic nitrogen population produced by a microwave electron cyclotron resonance plasma. Applied Physics Letters, 54 (17). 1648-1649 doi:10.1063/1.101311
In(1989, April) Applied Physics Letters Vol. 54 (17) AIP Publishing

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Meikle, Scott, Nomura, Hideaki, Nakanishi, Yoichiro, Hatanaka, Yoshinori (1990) Reactions of atomic nitrogen and trimethyl aluminum downstream from a nitrogen microwave plasma. Journal of Applied Physics, 67 (1). 483-486 doi:10.1063/1.345229
Meikle, Scott, Hatanaka, Yoshinori (1990) Pressure‐dependent transition in the mechanism of remote plasma SiNxdeposition. Applied Physics Letters, 57 (8). 762-764 doi:10.1063/1.104259
Matsuoka, Morito, Ono, Ken’ichi (1989) New high‐rate sputtering‐type electron cyclotron resonance microwave plasma using an electric mirror. Applied Physics Letters, 54 (17). 1645-1647 doi:10.1063/1.101310
Nomura, Hideaki, Meikle, Scott, Nakanishi, Yoichiro, Hatanaka, Yoshinori (1991) Remote plasma deposition of aluminum nitride. Journal of Applied Physics, 69 (2). 990-993 doi:10.1063/1.348918
Jin, S., Moustakas, T. D. (1993) Electrical conductivity studies of diamond films prepared by electron cyclotron resonance microwave plasma. Applied Physics Letters, 63 (17). 2354-2356 doi:10.1063/1.110524
Pool, F. S. (1997) Nitrogen plasma instabilities and the growth of silicon nitride by electron cyclotron resonance microwave plasma chemical vapor deposition. Journal of Applied Physics, 81 (6). 2839-2846 doi:10.1063/1.363943
Yasaka, Yasuyoshi, Nakamura, Tomokazu (1996) Control of process uniformity by using electron cyclotron resonance plasma produced by multiannular antenna. Applied Physics Letters, 68 (11). 1476-1478 doi:10.1063/1.116259
Bernabei, S., De Dionigi, R., Fontanesi, M. (1973) Microwave power absorption by a plasma outside the electron cyclotron resonance region. Applied Physics Letters, 22 (3). 85-86 doi:10.1063/1.1654572
Yoshida, Yoshikazu (1992) Low‐gas‐pressure sputtering by means of microwave‐enhanced magnetron plasma excited by electron cyclotron resonance. Applied Physics Letters, 61 (14). 1733-1734 doi:10.1063/1.108413
Matsumoto, Akinori, Meikle, Scott, Nakanishi, Yoichiro, Hatanaka, Yoshinori (1992) Deposition of Aluminum Nitride by Remote Plasma-Enhanced Chemical Vapor Deposition Using Triisobutyle Aluminum. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l423
Zhu, Qiaozhi, Qin, Fuwen, Li, Wenbo, Wang, Dejun (2013) Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing. Applied Physics Letters, 103 (6). 62105pp. doi:10.1063/1.4818141
 
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