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Lee, Jong‐Lam, Uedono, Akira, Tanigawa, Shoichro, Lee, Jeong Yong (1990) Vacancy‐type defects in Si+‐implanted GaAs and its effects on electrical activation by rapid thermal annealing. Journal of Applied Physics, 67 (10). 6153-6158 doi:10.1063/1.345177

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Reference TypeJournal (article/letter/editorial)
TitleVacancy‐type defects in Si+‐implanted GaAs and its effects on electrical activation by rapid thermal annealing
JournalJournal of Applied Physics
AuthorsLee, Jong‐LamAuthor
Uedono, AkiraAuthor
Tanigawa, ShoichroAuthor
Lee, Jeong YongAuthor
Year1990 (May 15)Volume67
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.345177Search in ResearchGate
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Mindat Ref. ID5043721Long-form Identifiermindat:1:5:5043721:2
GUID0
Full ReferenceLee, Jong‐Lam, Uedono, Akira, Tanigawa, Shoichro, Lee, Jeong Yong (1990) Vacancy‐type defects in Si+‐implanted GaAs and its effects on electrical activation by rapid thermal annealing. Journal of Applied Physics, 67 (10). 6153-6158 doi:10.1063/1.345177
Plain TextLee, Jong‐Lam, Uedono, Akira, Tanigawa, Shoichro, Lee, Jeong Yong (1990) Vacancy‐type defects in Si+‐implanted GaAs and its effects on electrical activation by rapid thermal annealing. Journal of Applied Physics, 67 (10). 6153-6158 doi:10.1063/1.345177
In(1990, May) Journal of Applied Physics Vol. 67 (10) AIP Publishing

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Lee, Jong‐Lam, Shim, Kyu‐Hwan, Kim, Jin Sup, Park, Hyung Moo, Ma, Dong Sung, Tanigawa, S., Uedono, A. (1989) Depth profiles of vacancy‐type defect in Si+‐implanted GaAs resulting from rapid thermal annealing. Journal of Applied Physics, 65 (1). 396-397 doi:10.1063/1.342559
Lee, Jong‐Lam, Kim, Jin Sup, Park, Hyung Moo, Ma, Dong Sung, Tanigawa, S., Uedono, A. (1988) Depth profiles on ion implantation induced vacancy‐type defects in GaAs and Si observed by slow positron. Applied Physics Letters, 53 (14). 1302-1304 doi:10.1063/1.100003
Uedono, Akira, Tanigawa, Shoichiro, Sugiura, Jun, Ogasawara, Makoto (1990) Vacancy-Type Defects in As+-Implanted SiO2(43 nm)/Si Proved with Slow Positrons. Japanese Journal of Applied Physics, 29. 1867-1872 doi:10.1143/jjap.29.1867
Uedono, Akira, Tanigawa, Shoichiro (1990) Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l346
Wei, Long, Lee, J.L., Tanigawa, Shoichiro, Nakagawa, Tsubasa, Ohta, K. (1992) The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs during Rapid Thermal Annealing Studied by Slow Positrons. Materials Science Forum, 105. 1491-1494 doi:10.4028/www.scientific.net/msf.105-110.1491
Uedono, Akira, Tanigawa, Shoichiro, Sugiura, Jun, Ogasawara, Makoto (1989) A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam. Japanese Journal of Applied Physics, 28. 1293-1297 doi:10.1143/jjap.28.1293
Lee, Jong-Lam, Kim, Yi-Tae, Kwak, Joon Seop, Baik, Hong Koo, Uedono, Akira, Tanigawa, Shoichiro (1997) Evidence for the formation of n+-GaAs layer in Pd/Ge ohmic contact to n-type GaAs. Journal of Applied Physics, 82 (11). 5460-5464 doi:10.1063/1.365572
Wei, Long, Tanigawa, Shoichiro, Uedono, Akira, Wada, Kazumi, Nakanishi, Hideo (1994) Vacancy-Type Defects in Be-Implanted InP. Japanese Journal of Applied Physics, 33. 33-36 doi:10.1143/jjap.33.33
Shikata, Shin-ichi, Fujii, Satoshi, Wei, Long, Tanigawa, Shoichiro (1992) Effect of Annealing Method on Vacancy-Type Defects in Si-Implanted GaAs Studied by a Slow Positron Beam. Japanese Journal of Applied Physics, 31. 732-736 doi:10.1143/jjap.31.732
Uedono, A., Tanigawa, S., Sugiura, J., Ogasawara, M. (1988) Depth profile of vacancy‐type defects in B+‐implanted Si with a SiO2overlayer by a variable‐energy positron beam. Applied Physics Letters, 53 (1). 25-27 doi:10.1063/1.100569
Lee, Jong‐Lam, Wei, Long, Tanigawa, Shoichiro, Kawabe, Mitsuo (1990) Impurity effect on the creation of Ga vacancies in a Si‐doped layer grown on Be‐doped GaAs by molecular‐beam epitaxy. Journal of Applied Physics, 68 (11). 5571-5575 doi:10.1063/1.346992
 
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