| Reference Type | Journal (article/letter/editorial) |
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| Title | Depth profiles on ion implantation induced vacancy‐type defects in GaAs and Si observed by slow positron |
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| Journal | Applied Physics Letters |
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| Authors | Lee, Jong‐Lam | Author |
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| Kim, Jin Sup | Author |
| Park, Hyung Moo | Author |
| Ma, Dong Sung | Author |
| Tanigawa, S. | Author |
| Uedono, A. | Author |
| Year | 1988 (October 3) | Volume | 53 |
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| Issue | 14 |
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| Publisher | AIP Publishing |
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| DOI | doi:10.1063/1.100003Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 8484286 | Long-form Identifier | mindat:1:5:8484286:2 |
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| GUID | 0 |
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| Full Reference | Lee, Jong‐Lam, Kim, Jin Sup, Park, Hyung Moo, Ma, Dong Sung, Tanigawa, S., Uedono, A. (1988) Depth profiles on ion implantation induced vacancy‐type defects in GaAs and Si observed by slow positron. Applied Physics Letters, 53 (14). 1302-1304 doi:10.1063/1.100003 |
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| Plain Text | Lee, Jong‐Lam, Kim, Jin Sup, Park, Hyung Moo, Ma, Dong Sung, Tanigawa, S., Uedono, A. (1988) Depth profiles on ion implantation induced vacancy‐type defects in GaAs and Si observed by slow positron. Applied Physics Letters, 53 (14). 1302-1304 doi:10.1063/1.100003 |
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| In | (1988, October) Applied Physics Letters Vol. 53 (14) AIP Publishing |
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