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Yuan, Shu, Wang, Shumin, Qian, Shixiong, Li, Yufen, Andersson, T. G., Chen, Z‐G. (1990) Phototransmission study of strained‐layer InxGa1−xAs/GaAs single quantum well structures. Journal of Applied Physics, 68 (10). 5388-5390 doi:10.1063/1.347019

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Reference TypeJournal (article/letter/editorial)
TitlePhototransmission study of strained‐layer InxGa1−xAs/GaAs single quantum well structures
JournalJournal of Applied Physics
AuthorsYuan, ShuAuthor
Wang, ShuminAuthor
Qian, ShixiongAuthor
Li, YufenAuthor
Andersson, T. G.Author
Chen, Z‐G.Author
Year1990 (November 15)Volume68
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.347019Search in ResearchGate
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Mindat Ref. ID5047080Long-form Identifiermindat:1:5:5047080:0
GUID0
Full ReferenceYuan, Shu, Wang, Shumin, Qian, Shixiong, Li, Yufen, Andersson, T. G., Chen, Z‐G. (1990) Phototransmission study of strained‐layer InxGa1−xAs/GaAs single quantum well structures. Journal of Applied Physics, 68 (10). 5388-5390 doi:10.1063/1.347019
Plain TextYuan, Shu, Wang, Shumin, Qian, Shixiong, Li, Yufen, Andersson, T. G., Chen, Z‐G. (1990) Phototransmission study of strained‐layer InxGa1−xAs/GaAs single quantum well structures. Journal of Applied Physics, 68 (10). 5388-5390 doi:10.1063/1.347019
In(1990, November) Journal of Applied Physics Vol. 68 (10) AIP Publishing

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Andersson, T. G., Chen, Z. G., Kulakovskii, V. D., Uddin, A., Vallin, J. T. (1987) Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy. Applied Physics Letters, 51 (10). 752-754 doi:10.1063/1.98856
Evoy, S., Redinbo, G. F., Craighead, H. G. (1996) Cathodoluminescence and photoluminescence analysis of InxGa1−xAs/GaAs quantum well structures. Applied Physics Letters, 68 (9). 1259-1261 doi:10.1063/1.115945
Yao, J. Y., Andersson, T. G., Dunlop, G. L. (1991) The interfacial morphology of strained epitaxial InxGa1−xAs/GaAs. Journal of Applied Physics, 69 (4). 2224-2230 doi:10.1063/1.348700
Chen, Li, Rajkumar, K. C., Madhukar, A. (1990) Optical absorption and modulation behavior of strained InxGa1−xAs/GaAs(100)(x≤0.25) multiple quantum well structures grown via molecular beam epitaxy. Applied Physics Letters, 57 (23). 2478-2480 doi:10.1063/1.103835
Wang, S. M., Andersson, T. G., Ekenstedt, M. J. (1992) Temperature‐dependent transition from two‐dimensional to three‐dimensional growth in highly strained InxGa1−xAs/GaAs (0.36≤x≤1) single quantum wells. Applied Physics Letters, 61 (26). 3139-3141 doi:10.1063/1.107986
Andersson, T.G., Chen, Z.-G., Xu, Z.-Y., Xu, J.-Z., Ge, W.-K. (1989) Hot carrier photoluminescence from strained InxGa1−xAs/GaAs single quantum wells. Journal of Crystal Growth, 95 (1). 215-219 doi:10.1016/0022-0248(89)90386-2
Yao, J. Y., Andersson, T. G., Dunlop, G. L. (1988) Structure of lattice‐strained InxGa1−xAs/GaAs layers studied by transmission electron microscopy. Applied Physics Letters, 53 (15). 1420-1422 doi:10.1063/1.99960
Wang, C., Chen, P.P., Tang, N.Y., Xia, C.S., Chen, X.S., Lu, W. (2006) Piezomodulated and photomodulated reflectivity study of strained InxGa1–xAs/GaAs single quantum well. Physics Letters A, 350. 269-273 doi:10.1016/j.physleta.2005.10.015
Laidig, W. D., Lin, Y. F., Caldwell, P. J. (1985) Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers. Journal of Applied Physics, 57 (1). 33-38 doi:10.1063/1.335391
Kojima, Osamu, Mizoguchi, Kohji, Nakayama, Masaaki (2012) Quantum beats of type-I and type-II excitons in an InxGa1−xAs/GaAs strained single quantum well. Journal of Applied Physics, 112 (4). 43522pp. doi:10.1063/1.4748339
Huang, K. F., Tai, K., Chu, S. N. G., Cho, A. Y. (1989) Optical studies of InxGa1−xAs/GaAs strained‐layer quantum wells. Applied Physics Letters, 54 (20). 2026-2028 doi:10.1063/1.101181
 
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