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Yao, J. Y., Andersson, T. G., Dunlop, G. L. (1988) Structure of lattice‐strained InxGa1−xAs/GaAs layers studied by transmission electron microscopy. Applied Physics Letters, 53 (15). 1420-1422 doi:10.1063/1.99960

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Reference TypeJournal (article/letter/editorial)
TitleStructure of lattice‐strained InxGa1−xAs/GaAs layers studied by transmission electron microscopy
JournalApplied Physics Letters
AuthorsYao, J. Y.Author
Andersson, T. G.Author
Dunlop, G. L.Author
Year1988 (October 10)Volume53
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.99960Search in ResearchGate
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Mindat Ref. ID8484395Long-form Identifiermindat:1:5:8484395:9
GUID0
Full ReferenceYao, J. Y., Andersson, T. G., Dunlop, G. L. (1988) Structure of lattice‐strained InxGa1−xAs/GaAs layers studied by transmission electron microscopy. Applied Physics Letters, 53 (15). 1420-1422 doi:10.1063/1.99960
Plain TextYao, J. Y., Andersson, T. G., Dunlop, G. L. (1988) Structure of lattice‐strained InxGa1−xAs/GaAs layers studied by transmission electron microscopy. Applied Physics Letters, 53 (15). 1420-1422 doi:10.1063/1.99960
In(1988, October) Applied Physics Letters Vol. 53 (15) AIP Publishing

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Yao, J. Y., Andersson, T. G., Dunlop, G. L. (1991) The interfacial morphology of strained epitaxial InxGa1−xAs/GaAs. Journal of Applied Physics, 69 (4). 2224-2230 doi:10.1063/1.348700
Yao, J. Y., Andersson, T. G., Dunlop, G. L. (1991) Characterization of interfacial topography in lattice strained InxGa1−xAs/GaAs heterostructures by the weak beam imaging technique. Philosophical Magazine A, 64 (1). 173-199 doi:10.1080/01418619108206134
Ekenstedt, M. J., Songpongs, P., Andersson, T. G. (1992) Electron mobility and Si incorporation in InxGa1−xAs layers grown on GaAs by molecular beam epitaxy. Applied Physics Letters, 61 (7). 789-791 doi:10.1063/1.107799
Yao, Ji Yong, Andersson, T.G., Dunlop, Gordon (1995) Interfacial Microstructure of InxGa1-xAs/GaAs Strained Layers. Materials Science Forum, 189. 285-290 doi:10.4028/www.scientific.net/msf.189-190.285
Wei, X. L., Fung, K. K., Feng, W., Zhou, J. M. (1992) Characterization of InxGa1−xAs/GaAs strained‐layer superlattices by transmission electron microscopy and convergent beam electron diffraction. Applied Physics Letters, 61 (5). 572-574 doi:10.1063/1.107840
Andersson, T. G., Chen, Z. G., Kulakovskii, V. D., Uddin, A., Vallin, J. T. (1987) Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy. Applied Physics Letters, 51 (10). 752-754 doi:10.1063/1.98856
Cullis, A. G., Smith, P. W., Parbrook, P. J., Cockayne, B., Wright, P. J., Williams, G. M. (1989) Structure of hexagonal and cubic CdS heteroepitaxial layers on GaAs studied by transmission electron microscopy. Applied Physics Letters, 55 (20). 2081-2083 doi:10.1063/1.102114
Yuan, Shu, Wang, Shumin, Qian, Shixiong, Li, Yufen, Andersson, T. G., Chen, Z‐G. (1990) Phototransmission study of strained‐layer InxGa1−xAs/GaAs single quantum well structures. Journal of Applied Physics, 68 (10). 5388-5390 doi:10.1063/1.347019
Wang, S. M., Andersson, T. G., Ekenstedt, M. J. (1992) Temperature‐dependent transition from two‐dimensional to three‐dimensional growth in highly strained InxGa1−xAs/GaAs (0.36≤x≤1) single quantum wells. Applied Physics Letters, 61 (26). 3139-3141 doi:10.1063/1.107986
McCaffrey, J. P., Bryskiewicz, B., Bryskiewicz, T., Jiran, E. (1994) Transmission electron microscopy characterization of InxGa1−xAs substrates grown by heteroepitaxial lateral overgrowth. Applied Physics Letters, 64 (18). 2344-2346 doi:10.1063/1.111609
Fritz, I. J., Picraux, S. T., Dawson, L. R., Drummond, T. J., Laidig, W. D., Anderson, N. G. (1985) Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices. Applied Physics Letters, 46 (10). 967-969 doi:10.1063/1.95783
 
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