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Radnoczi, G., Robertsson, A., Hentzell, H. T. G., Gong, S. F., Hasan, M.‐A. (1991) Al induced crystallization ofa‐Si. Journal of Applied Physics, 69 (9). 6394-6399 doi:10.1063/1.348842

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Reference TypeJournal (article/letter/editorial)
TitleAl induced crystallization ofa‐Si
JournalJournal of Applied Physics
AuthorsRadnoczi, G.Author
Robertsson, A.Author
Hentzell, H. T. G.Author
Gong, S. F.Author
Hasan, M.‐A.Author
Year1991 (May)Volume69
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.348842Search in ResearchGate
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Mindat Ref. ID5053071Long-form Identifiermindat:1:5:5053071:3
GUID0
Full ReferenceRadnoczi, G., Robertsson, A., Hentzell, H. T. G., Gong, S. F., Hasan, M.‐A. (1991) Al induced crystallization ofa‐Si. Journal of Applied Physics, 69 (9). 6394-6399 doi:10.1063/1.348842
Plain TextRadnoczi, G., Robertsson, A., Hentzell, H. T. G., Gong, S. F., Hasan, M.‐A. (1991) Al induced crystallization ofa‐Si. Journal of Applied Physics, 69 (9). 6394-6399 doi:10.1063/1.348842
In(1991, May) Journal of Applied Physics Vol. 69 (9) AIP Publishing

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Gong, S. F., Hentzell, H. T. G., Robertsson, A. E., Hultman, L., Hörnström, S.‐E., Radnoczi, G. (1987) Al‐doped and Sb‐doped polycrystalline silicon obtained by means of metal‐induced crystallization. Journal of Applied Physics, 62 (9). 3726-3732 doi:10.1063/1.339256
Gong, S. F., Hentzell, H. T. G., Radnoczi, G., Charai, A. (1988) Solid phase epitaxy and doping of Si through Sb‐enhanced recrystallization of polycrystalline Si. Applied Physics Letters, 53 (10). 902-904 doi:10.1063/1.100110
Li, X.‐H., Gong, S. F., Hentzell, H. T. G., Hagel, J., Robertsson, A. (1991) Simultaneous Sb doping and formation of self‐aligned TiSi2by codeposition of Ti and Sb. Journal of Applied Physics, 69 (7). 3924-3928 doi:10.1063/1.348451
Gong, S. F., Robertsson, A., Hentzell, H. T. G., Li, X.‐H. (1990) Thermodynamic investigations of solid‐state Si‐metal interactions. I. Experimental and analytical studies of the Si‐Ti binary system. Journal of Applied Physics, 68 (9). 4535-4541 doi:10.1063/1.346159
Gong, S. F., Hentzell, H. T. G., Robertsson, A. E. (1988) Initial solid‐state reactions between crystalline Sb and amorphous Si thin films. Journal of Applied Physics, 64 (3). 1457-1463 doi:10.1063/1.341817
Carlsson, J. R. A., Gong, S. F., Li, X.‐H., Hentzell, H. T. G. (1991) Influence of B concentration on recrystallization of polycrystalline Si. Journal of Applied Physics, 70 (9). 4857-4862 doi:10.1063/1.349027
Hultman, L., Robertsson, A., Hentzell, H. T. G., Engström, I., Psaras, P. A. (1987) Crystallization of amorphous silicon during thin‐film gold reaction. Journal of Applied Physics, 62 (9). 3647-3655 doi:10.1063/1.339244
Gong, S. F., Hentzell, H. T. G., Robertsson, A., Strandberg, J., Hagel, J. (1989) A metal‐oxide‐silicon field‐effect transistor made by means of solid‐phase doping. Journal of Applied Physics, 65 (11). 4435-4437 doi:10.1063/1.343284
Li, X.‐H., Carlsson, J. R. A., Gong, S. F., Hentzell, H. T. G. (1994) Thermal stability and crystallization products of amorphous Si:P alloy thin films made by coevaporation of Si and P. Journal of Applied Physics, 76 (9). 5179-5184 doi:10.1063/1.357235
Gong, S. F., Hentzell, H. T. G. (1990) Thermodynamic investigations of solid‐state Si‐metal interactions. II. General analysis of Si‐metal binary systems. Journal of Applied Physics, 68 (9). 4542-4549 doi:10.1063/1.347162
Li, X.‐H., Carlsson, J. R. A., Järrendahl, K., Gong, S. F., Hentzell, H. T. G. (1994) Optical properties and crystallization of amorphous Si:Sb alloy thin films. Journal of Applied Physics, 75 (1). 507-513 doi:10.1063/1.355830
 
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