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Gong, S. F., Hentzell, H. T. G., Radnoczi, G., Charai, A. (1988) Solid phase epitaxy and doping of Si through Sb‐enhanced recrystallization of polycrystalline Si. Applied Physics Letters, 53 (10). 902-904 doi:10.1063/1.100110

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Reference TypeJournal (article/letter/editorial)
TitleSolid phase epitaxy and doping of Si through Sb‐enhanced recrystallization of polycrystalline Si
JournalApplied Physics Letters
AuthorsGong, S. F.Author
Hentzell, H. T. G.Author
Radnoczi, G.Author
Charai, A.Author
Year1988 (September 5)Volume53
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.100110Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484057Long-form Identifiermindat:1:5:8484057:2
GUID0
Full ReferenceGong, S. F., Hentzell, H. T. G., Radnoczi, G., Charai, A. (1988) Solid phase epitaxy and doping of Si through Sb‐enhanced recrystallization of polycrystalline Si. Applied Physics Letters, 53 (10). 902-904 doi:10.1063/1.100110
Plain TextGong, S. F., Hentzell, H. T. G., Radnoczi, G., Charai, A. (1988) Solid phase epitaxy and doping of Si through Sb‐enhanced recrystallization of polycrystalline Si. Applied Physics Letters, 53 (10). 902-904 doi:10.1063/1.100110
In(1988, September) Applied Physics Letters Vol. 53 (10) AIP Publishing

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Radnoczi, G., Robertsson, A., Hentzell, H. T. G., Gong, S. F., Hasan, M.‐A. (1991) Al induced crystallization ofa‐Si. Journal of Applied Physics, 69 (9). 6394-6399 doi:10.1063/1.348842
Gong, S. F., Hentzell, H. T. G., Robertsson, A. E. (1988) Initial solid‐state reactions between crystalline Sb and amorphous Si thin films. Journal of Applied Physics, 64 (3). 1457-1463 doi:10.1063/1.341817
Carlsson, J. R. A., Gong, S. F., Li, X.‐H., Hentzell, H. T. G. (1991) Influence of B concentration on recrystallization of polycrystalline Si. Journal of Applied Physics, 70 (9). 4857-4862 doi:10.1063/1.349027
Gong, S. F., Hentzell, H. T. G., Robertsson, A. E., Hultman, L., Hörnström, S.‐E., Radnoczi, G. (1987) Al‐doped and Sb‐doped polycrystalline silicon obtained by means of metal‐induced crystallization. Journal of Applied Physics, 62 (9). 3726-3732 doi:10.1063/1.339256
Gong, S. F., Hentzell, H. T. G. (1990) Thermodynamic investigations of solid‐state Si‐metal interactions. II. General analysis of Si‐metal binary systems. Journal of Applied Physics, 68 (9). 4542-4549 doi:10.1063/1.347162
Gong, S. F., Robertsson, A., Hentzell, H. T. G., Li, X.‐H. (1990) Thermodynamic investigations of solid‐state Si‐metal interactions. I. Experimental and analytical studies of the Si‐Ti binary system. Journal of Applied Physics, 68 (9). 4535-4541 doi:10.1063/1.346159
Li, X.‐H., Gong, S. F., Hentzell, H. T. G., Hagel, J., Robertsson, A. (1991) Simultaneous Sb doping and formation of self‐aligned TiSi2by codeposition of Ti and Sb. Journal of Applied Physics, 69 (7). 3924-3928 doi:10.1063/1.348451
Gong, S. F., Hentzell, H. T. G., Robertsson, A., Strandberg, J., Hagel, J. (1989) A metal‐oxide‐silicon field‐effect transistor made by means of solid‐phase doping. Journal of Applied Physics, 65 (11). 4435-4437 doi:10.1063/1.343284
Li, X.‐H., Carlsson, J. R. A., Gong, S. F., Hentzell, H. T. G. (1992) Effects of Sb on phase transformations of amorphous TiSi2thin films. Journal of Applied Physics, 72 (2). 514-519 doi:10.1063/1.351882
Dan, Toru, Ishiwara, Hiroshi, Furukawa, Seijiro (1988) Lateral solid phase epitaxy of amorphous Si films by selective surface doping method of P atoms. Applied Physics Letters, 53 (26). 2626-2628 doi:10.1063/1.100179
Hong, Q. Z., Zhu, J. G., Mayer, J. W. (1989) Solid phase epitaxy of a Ge‐Si alloy on [111] Si through a Pd2Si layer. Applied Physics Letters, 55 (8). 747-748 doi:10.1063/1.101794
 
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