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Li, X.‐H., Carlsson, J. R. A., Gong, S. F., Hentzell, H. T. G. (1992) Effects of Sb on phase transformations of amorphous TiSi2thin films. Journal of Applied Physics, 72 (2). 514-519 doi:10.1063/1.351882

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Reference TypeJournal (article/letter/editorial)
TitleEffects of Sb on phase transformations of amorphous TiSi2thin films
JournalJournal of Applied Physics
AuthorsLi, X.‐H.Author
Carlsson, J. R. A.Author
Gong, S. F.Author
Hentzell, H. T. G.Author
Year1992 (July 15)Volume72
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.351882Search in ResearchGate
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Mindat Ref. ID5059091Long-form Identifiermindat:1:5:5059091:9
GUID0
Full ReferenceLi, X.‐H., Carlsson, J. R. A., Gong, S. F., Hentzell, H. T. G. (1992) Effects of Sb on phase transformations of amorphous TiSi2thin films. Journal of Applied Physics, 72 (2). 514-519 doi:10.1063/1.351882
Plain TextLi, X.‐H., Carlsson, J. R. A., Gong, S. F., Hentzell, H. T. G. (1992) Effects of Sb on phase transformations of amorphous TiSi2thin films. Journal of Applied Physics, 72 (2). 514-519 doi:10.1063/1.351882
In(1992, July) Journal of Applied Physics Vol. 72 (2) AIP Publishing

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Li, X.‐H., Carlsson, J. R. A., Järrendahl, K., Gong, S. F., Hentzell, H. T. G. (1994) Optical properties and crystallization of amorphous Si:Sb alloy thin films. Journal of Applied Physics, 75 (1). 507-513 doi:10.1063/1.355830
Li, X.‐H., Carlsson, J. R. A., Gong, S. F., Hentzell, H. T. G., Liedberg, B. (1995) Optical and electrical investigation of semiconducting amorphous Si:P alloy thin films. Journal of Applied Physics, 77 (1). 301-307 doi:10.1063/1.359392
Carlsson, J. R. A., Li, X.‐H., Gong, S. F., Hentzell, H. T. G. (1993) Structural and optical band‐gap properties of the amorphous semiconducting Si1−xBxalloy. Journal of Applied Physics, 74 (2). 891-896 doi:10.1063/1.354883
Li, X.‐H., Carlsson, J. R. A., Johansson, M., Ekström, B., Gong, S. F., Hentzell, H. T. G. (1992) Silicon heterojunction bipolar power transistor with an amorphous Si:B alloy emitter. Applied Physics Letters, 61 (11). 1316-1318 doi:10.1063/1.107577
Li, X.‐H., Carlsson, J. R. A., Gong, S. F., Hentzell, H. T. G. (1994) Thermal stability and crystallization products of amorphous Si:P alloy thin films made by coevaporation of Si and P. Journal of Applied Physics, 76 (9). 5179-5184 doi:10.1063/1.357235
Carlsson, J. R. A., Gong, S. F., Li, X.‐H., Hentzell, H. T. G. (1991) Influence of B concentration on recrystallization of polycrystalline Si. Journal of Applied Physics, 70 (9). 4857-4862 doi:10.1063/1.349027
Gong, S. F., Hentzell, H. T. G., Robertsson, A. E. (1988) Initial solid‐state reactions between crystalline Sb and amorphous Si thin films. Journal of Applied Physics, 64 (3). 1457-1463 doi:10.1063/1.341817
Li, X.‐H., Gong, S. F., Hentzell, H. T. G., Hagel, J., Robertsson, A. (1991) Simultaneous Sb doping and formation of self‐aligned TiSi2by codeposition of Ti and Sb. Journal of Applied Physics, 69 (7). 3924-3928 doi:10.1063/1.348451
Carlsson, J. R. A., Sundgren, J.-E., Li, X.-H., Madsen, L. D., Hentzell, H. T. G. (1997) Predicting the crystallization temperature variation with composition for amorphous silicon-based binary alloy thin films. Journal of Applied Physics, 81 (3). 1150-1156 doi:10.1063/1.363860
Thompson, R. D., Takai, H., Psaras, P. A., Tu, K. N. (1987) Effect of a substrate on the phase transformations of amorphous TiSi2thin films. Journal of Applied Physics, 61 (2). 540-544 doi:10.1063/1.338254
Gong, S. F., Hentzell, H. T. G., Radnoczi, G., Charai, A. (1988) Solid phase epitaxy and doping of Si through Sb‐enhanced recrystallization of polycrystalline Si. Applied Physics Letters, 53 (10). 902-904 doi:10.1063/1.100110
 
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