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Banvillet, H., Gil, E., Cadoret, R., Disseix, P., Ferdjani, K., Vasson, A., Vasson, A. M., Tabata, A., Benyattou, T., Guillot, G. (1991) Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor‐phase epitaxy. Journal of Applied Physics, 70 (3). 1638-1641 doi:10.1063/1.349529

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Reference TypeJournal (article/letter/editorial)
TitleOptical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor‐phase epitaxy
JournalJournal of Applied Physics
AuthorsBanvillet, H.Author
Gil, E.Author
Cadoret, R.Author
Disseix, P.Author
Ferdjani, K.Author
Vasson, A.Author
Vasson, A. M.Author
Tabata, A.Author
Benyattou, T.Author
Guillot, G.Author
Year1991 (August)Volume70
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.349529Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5054967Long-form Identifiermindat:1:5:5054967:8
GUID0
Full ReferenceBanvillet, H., Gil, E., Cadoret, R., Disseix, P., Ferdjani, K., Vasson, A., Vasson, A. M., Tabata, A., Benyattou, T., Guillot, G. (1991) Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor‐phase epitaxy. Journal of Applied Physics, 70 (3). 1638-1641 doi:10.1063/1.349529
Plain TextBanvillet, H., Gil, E., Cadoret, R., Disseix, P., Ferdjani, K., Vasson, A., Vasson, A. M., Tabata, A., Benyattou, T., Guillot, G. (1991) Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor‐phase epitaxy. Journal of Applied Physics, 70 (3). 1638-1641 doi:10.1063/1.349529
In(1991, August) Journal of Applied Physics Vol. 70 (3) AIP Publishing

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Sobiesierski, Z., Clark, S. A., Williams, R. H., Tabata, A., Benyattou, T., Guillot, G., Gendry, M., Hollinger, G., Viktorovitch, P. (1991) Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Physics Letters, 58 (17). 1863-1865 doi:10.1063/1.105055
Disseix, P., Payen, C., Leymarie, J., Vasson, A., Mollot, F. (2000) Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy. Journal of Applied Physics, 88 (8). 4612pp. doi:10.1063/1.1309050
Piffault, N., Gil, E., Leymaire, J., Monier, C., Clark, S.A., Anderson, M., Cadoret, R., Vasson, A., Vasson, A.M. (1994) Epitaxial growth and kinetic study of mismatched (Ga,In) As/InP layers grown by hydride vapour phase epitaxy. Journal of Crystal Growth, 135 (1). 11-22 doi:10.1016/0022-0248(94)90720-x
Schneider, R. P., Wessels, B. W. (1991) Optical properties of InAs/InP strained single quantum wells grown by organometallic vapor‐phase epitaxy. Journal of Applied Physics, 70 (1). 405-408 doi:10.1063/1.350289
Goumet, E., Gil-Lafon, E., Cadoret, R., Castelluci, D., Leymarie, J., Vasson, A.M., Vasson, A., Bideux, L., Gruzza, B. (1999) Epitaxial growth of InAsxP1−x/InP quantum wells by HVPE. Applied Surface Science, 142. 637-641 doi:10.1016/s0169-4332(98)00684-9
Disseix, P., Leymarie, J., Vasson, A., Vasson, A.-M., Monier, C., Grandjean, N., Leroux, M., Massies, J. (1997) Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells. Physical Review B, 55 (4) 2406-2412 doi:10.1103/physrevb.55.2406
Ballet, P., Disseix, P., Leymarie, J., Vasson, A., Vasson, A-M., Grey, R. (1997) Excitonic properties in (111)B-grown (In,Ga)As/GaAs piezoelectric multiple quantum wells. Physical Review B, 56 (23) 15202-15210 doi:10.1103/physrevb.56.15202
Morais, P. C., Cox, H. M., Bastos, P. L., Hwang, D. M., Worlock, J. M., Yablonovitch, E., Nahory, R. E. (1989) Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy. Applied Physics Letters, 54 (5). 442-444 doi:10.1063/1.100946
Courboulès, B., Massies, J., Deparis, C., Grandjean, N., Leymarie, J., Monier, C., Vasson, A. M., Vasson, A. (1994) Monolayer thickness control of InxGa1−xAs/GaAs quantum wells grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 64 (12). 1523-1525 doi:10.1063/1.111879
Schneider, R. P., Wessels, B. W. (1990) InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy. Applied Physics Letters, 57 (19). 1998-2000 doi:10.1063/1.103989
Leymarie, J., Monier, C., Vasson, A., Vasson, A.-M., Leroux, M., Courboulès, B., Grandjean, N., Deparis, C., Massies, J. (1995) Optical investigations in (In,Ga)As/GaAs quantum wells grown by metalorganic molecular-beam epitaxy. Physical Review B, 51 (19) 13274-13280 doi:10.1103/physrevb.51.13274
 
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