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Sobiesierski, Z., Clark, S. A., Williams, R. H., Tabata, A., Benyattou, T., Guillot, G., Gendry, M., Hollinger, G., Viktorovitch, P. (1991) Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Physics Letters, 58 (17). 1863-1865 doi:10.1063/1.105055

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Reference TypeJournal (article/letter/editorial)
TitleObservation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsSobiesierski, Z.Author
Clark, S. A.Author
Williams, R. H.Author
Tabata, A.Author
Benyattou, T.Author
Guillot, G.Author
Gendry, M.Author
Hollinger, G.Author
Viktorovitch, P.Author
Year1991 (April 29)Volume58
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.105055Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8493906Long-form Identifiermindat:1:5:8493906:1
GUID0
Full ReferenceSobiesierski, Z., Clark, S. A., Williams, R. H., Tabata, A., Benyattou, T., Guillot, G., Gendry, M., Hollinger, G., Viktorovitch, P. (1991) Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Physics Letters, 58 (17). 1863-1865 doi:10.1063/1.105055
Plain TextSobiesierski, Z., Clark, S. A., Williams, R. H., Tabata, A., Benyattou, T., Guillot, G., Gendry, M., Hollinger, G., Viktorovitch, P. (1991) Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Physics Letters, 58 (17). 1863-1865 doi:10.1063/1.105055
In(1991, April) Applied Physics Letters Vol. 58 (17) AIP Publishing

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Sobiesierski, Z., Clark, S.A., Williams, R.H. (1992) Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Surface Science, 56. 703-707 doi:10.1016/0169-4332(92)90325-r
Banvillet, H., Gil, E., Cadoret, R., Disseix, P., Ferdjani, K., Vasson, A., Vasson, A. M., Tabata, A., Benyattou, T., Guillot, G. (1991) Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor‐phase epitaxy. Journal of Applied Physics, 70 (3). 1638-1641 doi:10.1063/1.349529
Sobiesierski, Z., Woolf, D. A., Westwood, D. I., Williams, R. H. (1991) Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy. Applied Physics Letters, 58 (6). 628-630 doi:10.1063/1.104550
Brault, J., Gendry, M., Grenet, G., Hollinger, G., Olivares, J., Salem, B., Benyattou, T., Bremond, G. (2002) Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001). Journal of Applied Physics, 92 (1). 506-510 doi:10.1063/1.1481959
Brault, J., Gendry, M., Grenet, G., Hollinger, G., Desières, Y., Benyattou, T. (1998) Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001). Applied Physics Letters, 73 (20). 2932-2934 doi:10.1063/1.122634
Gendry, M., Drouot, V., Hollinger, G., Mahajan, S. (1995) Effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers grown by molecular beam epitaxy on InAlAs/InP heterostructures. Applied Physics Letters, 66 (1). 40-42 doi:10.1063/1.114175
Gendry, M., Drouot, V., Santinelli, C., Hollinger, G. (1992) Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy. Applied Physics Letters, 60 (18). 2249-2251 doi:10.1063/1.107045
Marsh, J. H., Roberts, J. S., Claxton, P. A. (1985) Photoluminescence from In0.53Ga0.47As/InP quantum wells grown by molecular beam epitaxy. Applied Physics Letters, 46 (12). 1161-1163 doi:10.1063/1.95744
Salem, B., Benyattou, T., Guillot, G., Bru-Chevallier, C., Bremond, G., Monat, C., Hollinger, G., Gendry, M. (2002) Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001) Physical Review B, 66 (19) doi:10.1103/physrevb.66.193305
Gendry, M., Monat, C., Brault, J., Regreny, P., Hollinger, G., Salem, B., Guillot, G., Benyattou, T., Bru-chevallier, C., Bremond, G., Marty, O. (2004) From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001). Journal of Applied Physics, 95 (9). 4761-4766 doi:10.1063/1.1690101
Salem, B., Olivares, J., Guillot, G., Bremond, G., Brault, J., Monat, C., Gendry, M., Hollinger, G., Hassen, F., Maaref, H. (2001) Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates. Applied Physics Letters, 79 (26). 4435-4437 doi:10.1063/1.1427742
 
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