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Slijkerman, W. F. J., Zagwijn, P. M., van der Veen, J. F., van de Walle, G. F. A., Gravesteijn, D. J. (1991) Anomalous Sb redistribution during the preparation of delta‐doping layers in silicon. Journal of Applied Physics, 70 (4). 2111-2116 doi:10.1063/1.349447

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Reference TypeJournal (article/letter/editorial)
TitleAnomalous Sb redistribution during the preparation of delta‐doping layers in silicon
JournalJournal of Applied Physics
AuthorsSlijkerman, W. F. J.Author
Zagwijn, P. M.Author
van der Veen, J. F.Author
van de Walle, G. F. A.Author
Gravesteijn, D. J.Author
Year1991 (August 15)Volume70
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.349447Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5055246Long-form Identifiermindat:1:5:5055246:9
GUID0
Full ReferenceSlijkerman, W. F. J., Zagwijn, P. M., van der Veen, J. F., van de Walle, G. F. A., Gravesteijn, D. J. (1991) Anomalous Sb redistribution during the preparation of delta‐doping layers in silicon. Journal of Applied Physics, 70 (4). 2111-2116 doi:10.1063/1.349447
Plain TextSlijkerman, W. F. J., Zagwijn, P. M., van der Veen, J. F., van de Walle, G. F. A., Gravesteijn, D. J. (1991) Anomalous Sb redistribution during the preparation of delta‐doping layers in silicon. Journal of Applied Physics, 70 (4). 2111-2116 doi:10.1063/1.349447
In(1991, August) Journal of Applied Physics Vol. 70 (4) AIP Publishing

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Zagwijn, P. M., Erokhin, Y. N., Slijkerman, W. F. J., van der Veen, J. F., van de Walle, G. F. A., Gravesteijn, D. J., van Gorkum, A. A. (1991) Ga delta‐doping layers in silicon. Applied Physics Letters, 59 (12). 1461-1463 doi:10.1063/1.105288
Slijkerman, W. F. J., Gay, J. M., Zagwijn, P. M., van der Veen, J. F., Macdonald, J. E., Williams, A. A., Gravesteijn, D. J., van de Walle, G. F. A. (1990) X‐ray reflectivity of an Sb delta‐doping layer in silicon. Journal of Applied Physics, 68 (10). 5105-5108 doi:10.1063/1.347047
Slijkerman, W. F. J., Zagwijn, P. M., van der Veen, J. F., van Gorkum, A. A., van de Walle, G. F. A. (1989) Structural characterization of an Sb delta‐doping layer in silicon. Applied Physics Letters, 55 (10). 963-965 doi:10.1063/1.101690
Zagwijn, P. M., van der Veen, J. F., Vlieg, E., Reader, A. H., Gravesteijn, D. J. (1995) A solution of the doping problem for Ga delta‐doping layers in Si. Journal of Applied Physics, 78 (8). 4933-4938 doi:10.1063/1.359782
Slijkerman, W.F.J., Zagwijn, P.M., van der Veen, J.F., Gravesteijn, D.J., van de Walle, G.F.A. (1992) The interaction of Sb overlayers with Si(001). Surface Science, 262 (1). 25-32 doi:10.1016/0039-6028(92)90456-g
Schut, H., van Veen, A., van de Walle, G. F. A., Gorkum, A. A. van (1991) Positron beam defect profiling of silicon epitaxial layers. Journal of Applied Physics, 70 (6). 3003-3006 doi:10.1063/1.349329
Montie, E. A., van de Walle, G. F. A., Gravesteijn, D. J., van Gorkum, A. A., Bulle‐Lieuwma, C. W. T. (1990) Photoluminescence from Si/Ge superlattices. Applied Physics Letters, 56 (4). 340-342 doi:10.1063/1.102802
Gravesteijn, Dirk J., van De Walle, Gerjan F. A., van Gorkum, Aart A. (1991) Silicon molecular beam epitaxy. Advanced Materials, 3. 351-355 doi:10.1002/adma.19910030705
Fischer, A. E. M. J., Slijkerman, W. F. J., Nakagawa, K., Smith, R. J., van der Veen, J. F., Bulle‐Lieuwma, C. W. T. (1988) Growth of uniform epitaxial CoSi2films on Si(111). Journal of Applied Physics, 64 (6). 3005-3013 doi:10.1063/1.341563
Slijkerman, W. F. J., Fischer, A. E. M. J., van der Veen, J. F., Ohdomari, I., Yoshida, S., Misawa, S. (1989) Formation of the Ni‐SiC(001) interface studied by high‐resolution ion backscattering. Journal of Applied Physics, 66 (2). 666-673 doi:10.1063/1.343535
Zalm, P. C., van de Walle, G. F. A., Gravesteijn, D. J., van Gorkum, A. A. (1989) Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxy. Applied Physics Letters, 55 (24). 2520-2522 doi:10.1063/1.101995
 
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