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Slijkerman, W. F. J., Zagwijn, P. M., van der Veen, J. F., van Gorkum, A. A., van de Walle, G. F. A. (1989) Structural characterization of an Sb delta‐doping layer in silicon. Applied Physics Letters, 55 (10). 963-965 doi:10.1063/1.101690

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Reference TypeJournal (article/letter/editorial)
TitleStructural characterization of an Sb delta‐doping layer in silicon
JournalApplied Physics Letters
AuthorsSlijkerman, W. F. J.Author
Zagwijn, P. M.Author
van der Veen, J. F.Author
van Gorkum, A. A.Author
van de Walle, G. F. A.Author
Year1989 (September 4)Volume55
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.101690Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8487712Long-form Identifiermindat:1:5:8487712:3
GUID0
Full ReferenceSlijkerman, W. F. J., Zagwijn, P. M., van der Veen, J. F., van Gorkum, A. A., van de Walle, G. F. A. (1989) Structural characterization of an Sb delta‐doping layer in silicon. Applied Physics Letters, 55 (10). 963-965 doi:10.1063/1.101690
Plain TextSlijkerman, W. F. J., Zagwijn, P. M., van der Veen, J. F., van Gorkum, A. A., van de Walle, G. F. A. (1989) Structural characterization of an Sb delta‐doping layer in silicon. Applied Physics Letters, 55 (10). 963-965 doi:10.1063/1.101690
In(1989, September) Applied Physics Letters Vol. 55 (10) AIP Publishing

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Zagwijn, P. M., Erokhin, Y. N., Slijkerman, W. F. J., van der Veen, J. F., van de Walle, G. F. A., Gravesteijn, D. J., van Gorkum, A. A. (1991) Ga delta‐doping layers in silicon. Applied Physics Letters, 59 (12). 1461-1463 doi:10.1063/1.105288
Slijkerman, W. F. J., Gay, J. M., Zagwijn, P. M., van der Veen, J. F., Macdonald, J. E., Williams, A. A., Gravesteijn, D. J., van de Walle, G. F. A. (1990) X‐ray reflectivity of an Sb delta‐doping layer in silicon. Journal of Applied Physics, 68 (10). 5105-5108 doi:10.1063/1.347047
Slijkerman, W. F. J., Zagwijn, P. M., van der Veen, J. F., van de Walle, G. F. A., Gravesteijn, D. J. (1991) Anomalous Sb redistribution during the preparation of delta‐doping layers in silicon. Journal of Applied Physics, 70 (4). 2111-2116 doi:10.1063/1.349447
Schut, H., van Veen, A., van de Walle, G. F. A., Gorkum, A. A. van (1991) Positron beam defect profiling of silicon epitaxial layers. Journal of Applied Physics, 70 (6). 3003-3006 doi:10.1063/1.349329
Zalm, P. C., van de Walle, G. F. A., Gravesteijn, D. J., van Gorkum, A. A. (1989) Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxy. Applied Physics Letters, 55 (24). 2520-2522 doi:10.1063/1.101995
Zagwijn, P. M., van der Veen, J. F., Vlieg, E., Reader, A. H., Gravesteijn, D. J. (1995) A solution of the doping problem for Ga delta‐doping layers in Si. Journal of Applied Physics, 78 (8). 4933-4938 doi:10.1063/1.359782
Slijkerman, W.F.J., Zagwijn, P.M., van der Veen, J.F., Gravesteijn, D.J., van de Walle, G.F.A. (1992) The interaction of Sb overlayers with Si(001). Surface Science, 262 (1). 25-32 doi:10.1016/0039-6028(92)90456-g
Montie, E. A., van de Walle, G. F. A., Gravesteijn, D. J., van Gorkum, A. A., Bulle‐Lieuwma, C. W. T. (1990) Photoluminescence from Si/Ge superlattices. Applied Physics Letters, 56 (4). 340-342 doi:10.1063/1.102802
Gravesteijn, Dirk J., van De Walle, Gerjan F. A., van Gorkum, Aart A. (1991) Silicon molecular beam epitaxy. Advanced Materials, 3. 351-355 doi:10.1002/adma.19910030705
Slijkerman, W. F. J., Fischer, A. E. M. J., van der Veen, J. F., Ohdomari, I., Yoshida, S., Misawa, S. (1989) Formation of the Ni‐SiC(001) interface studied by high‐resolution ion backscattering. Journal of Applied Physics, 66 (2). 666-673 doi:10.1063/1.343535
Mishima, T., Fredriksz, C. W., van de Walle, G. F. A., Gravesteijn, D. J., van den Heuvel, R. A., van Gorkum, A. A. (1990) Effect of interface quality on the electrical properties ofp‐Si/SiGe two‐dimensional hole gas systems. Applied Physics Letters, 57 (24). 2567-2569 doi:10.1063/1.103818
 
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