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Sproul, A. B., Green, M. A., Stephens, A. W. (1992) Accurate determination of minority carrier‐ and lattice scattering‐mobility in silicon from photoconductance decay. Journal of Applied Physics, 72 (9). 4161-4171 doi:10.1063/1.352225

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Reference TypeJournal (article/letter/editorial)
TitleAccurate determination of minority carrier‐ and lattice scattering‐mobility in silicon from photoconductance decay
JournalJournal of Applied Physics
AuthorsSproul, A. B.Author
Green, M. A.Author
Stephens, A. W.Author
Year1992 (November)Volume72
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.352225Search in ResearchGate
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Mindat Ref. ID5060192Long-form Identifiermindat:1:5:5060192:3
GUID0
Full ReferenceSproul, A. B., Green, M. A., Stephens, A. W. (1992) Accurate determination of minority carrier‐ and lattice scattering‐mobility in silicon from photoconductance decay. Journal of Applied Physics, 72 (9). 4161-4171 doi:10.1063/1.352225
Plain TextSproul, A. B., Green, M. A., Stephens, A. W. (1992) Accurate determination of minority carrier‐ and lattice scattering‐mobility in silicon from photoconductance decay. Journal of Applied Physics, 72 (9). 4161-4171 doi:10.1063/1.352225
In(1992, November) Journal of Applied Physics Vol. 72 (9) AIP Publishing

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Stephens, A. W., Green, M. A. (1993) Minority carrier mobility of Czochralski‐grown silicon by microwave‐detected photoconductance decay. Journal of Applied Physics, 74 (10). 6212-6216 doi:10.1063/1.355191
Stephens, A. W., Green, M. A. (1996) Novel method for minority‐carrier mobility measurement using photoconductance decay with chemically passivated and plasma damaged surfaces. Journal of Applied Physics, 80 (7). 3897-3903 doi:10.1063/1.363346
Sproul, A. B., Green, M. A. (1993) Intrinsic carrier concentration and minority‐carrier mobility of silicon from 77 to 300 K. Journal of Applied Physics, 73 (3). 1214-1225 doi:10.1063/1.353288
Giesecke, J. A., Schindler, F., Bühler, M., Schubert, M. C., Warta, W. (2013) Accurate determination of minority carrier mobility in silicon from quasi-steady-state photoluminescence. Journal of Applied Physics, 113 (21). 213705pp. doi:10.1063/1.4807926
Stephens, A. W., Aberle, A. G., Green, M. A. (1994) Surface recombination velocity measurements at the silicon–silicon dioxide interface by microwave‐detected photoconductance decay. Journal of Applied Physics, 76 (1). 363-370 doi:10.1063/1.357082
Sproul, A. B., Green, M. A. (1991) Improved value for the silicon intrinsic carrier concentration from 275 to 375 K. Journal of Applied Physics, 70 (2). 846-854 doi:10.1063/1.349645
Giesecke, J. A., Kasemann, M., Warta, W. (2009) Determination of local minority carrier diffusion lengths in crystalline silicon from luminescence images. Journal of Applied Physics, 106 (1). 14907pp. doi:10.1063/1.3157200
Sinton, Ronald A., Cuevas, Andres (1996) Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data. Applied Physics Letters, 69 (17). 2510-2512 doi:10.1063/1.117723
Sproul, A. B., Green, M. A., Zhao, J. (1990) Improved value for the silicon intrinsic carrier concentration at 300 K. Applied Physics Letters, 57 (3). 255-257 doi:10.1063/1.103707
Liu, Zhengxin, Masuda, Atsushi, Kondo, Michio (2008) Investigating minority-carrier lifetime in small spherical Si using microwave photoconductance decay. Journal of Applied Physics, 103 (10). 104909pp. doi:10.1063/1.2936979
Schmidt, Jan, Aberle, Armin G. (1997) Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers. Journal of Applied Physics, 81 (9). 6186-6199 doi:10.1063/1.364403
 
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