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Sproul, A. B., Green, M. A., Zhao, J. (1990) Improved value for the silicon intrinsic carrier concentration at 300 K. Applied Physics Letters, 57 (3). 255-257 doi:10.1063/1.103707

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Reference TypeJournal (article/letter/editorial)
TitleImproved value for the silicon intrinsic carrier concentration at 300 K
JournalApplied Physics Letters
AuthorsSproul, A. B.Author
Green, M. A.Author
Zhao, J.Author
Year1990 (July 16)Volume57
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.103707Search in ResearchGate
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Mindat Ref. ID8492801Long-form Identifiermindat:1:5:8492801:0
GUID0
Full ReferenceSproul, A. B., Green, M. A., Zhao, J. (1990) Improved value for the silicon intrinsic carrier concentration at 300 K. Applied Physics Letters, 57 (3). 255-257 doi:10.1063/1.103707
Plain TextSproul, A. B., Green, M. A., Zhao, J. (1990) Improved value for the silicon intrinsic carrier concentration at 300 K. Applied Physics Letters, 57 (3). 255-257 doi:10.1063/1.103707
In(1990, July) Applied Physics Letters Vol. 57 (3) AIP Publishing

See Also

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Sproul, A. B., Green, M. A. (1991) Improved value for the silicon intrinsic carrier concentration from 275 to 375 K. Journal of Applied Physics, 70 (2). 846-854 doi:10.1063/1.349645
Sproul, A. B., Green, M. A. (1993) Intrinsic carrier concentration and minority‐carrier mobility of silicon from 77 to 300 K. Journal of Applied Physics, 73 (3). 1214-1225 doi:10.1063/1.353288
Wang, A., Zhao, J., Green, M. A. (1990) 24% efficient silicon solar cells. Applied Physics Letters, 57 (6). 602-604 doi:10.1063/1.103610
Sproul, A. B., Green, M. A., Stephens, A. W. (1992) Accurate determination of minority carrier‐ and lattice scattering‐mobility in silicon from photoconductance decay. Journal of Applied Physics, 72 (9). 4161-4171 doi:10.1063/1.352225
Lin, G. H., Kapur, M., Bockris, J. O’M. (1990) New hydrogenated amorphous silicon alloys. Applied Physics Letters, 57 (3). 300-301 doi:10.1063/1.103720
Green, Martin A. (1990) Intrinsic concentration, effective densities of states, and effective mass in silicon. Journal of Applied Physics, 67 (6). 2944-2954 doi:10.1063/1.345414
Edmiston, S. A., Heiser, G., Sproul, A. B., Green, M. A. (1996) Improved modeling of grain boundary recombination in bulk andp‐njunction regions of polycrystalline silicon solar cells. Journal of Applied Physics, 80 (12). 6783-6795 doi:10.1063/1.363806
Gregory, B. L., Jordan, A. G. (1964) Single‐Carrier Injection in Silicon at 76° and 300°K. Journal of Applied Physics, 35 (10). 3046-3047 doi:10.1063/1.1713157
Zhixiong, Xiao, Tongli, Wei, Jiang, Zheng (1996) Calculation and Analysis of the Intrinsic Carrier Concentration and the Einstein Relation for Heavily Doped Silicon from 77 K to 300 K. Japanese Journal of Applied Physics, 35. 1599-1604 doi:10.1143/jjap.35.1599
Klein, K. M., Park, C., Tasch, A. F. (1990) Local electron concentration‐dependent electronic stopping power model for Monte Carlo simulation of low‐energy ion implantation in silicon. Applied Physics Letters, 57 (25). 2701-2703 doi:10.1063/1.103804
Gelatos, A. V., Kanicki, J. (1990) Bias stress‐induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the ‘‘carrier‐induced defect creation’’ model correct?. Applied Physics Letters, 57 (12). 1197-1199 doi:10.1063/1.103484
 
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