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Wijewarnasuriya, P. S., Lange, M. D., Sivananthan, S., Faurie, J. P. (1994) Carrier recombination in indium‐doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy. Journal of Applied Physics, 75 (2). 1005-1009 doi:10.1063/1.356506

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Reference TypeJournal (article/letter/editorial)
TitleCarrier recombination in indium‐doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy
JournalJournal of Applied Physics
AuthorsWijewarnasuriya, P. S.Author
Lange, M. D.Author
Sivananthan, S.Author
Faurie, J. P.Author
Year1994 (January 15)Volume75
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.356506Search in ResearchGate
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Mindat Ref. ID5068611Long-form Identifiermindat:1:5:5068611:9
GUID0
Full ReferenceWijewarnasuriya, P. S., Lange, M. D., Sivananthan, S., Faurie, J. P. (1994) Carrier recombination in indium‐doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy. Journal of Applied Physics, 75 (2). 1005-1009 doi:10.1063/1.356506
Plain TextWijewarnasuriya, P. S., Lange, M. D., Sivananthan, S., Faurie, J. P. (1994) Carrier recombination in indium‐doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy. Journal of Applied Physics, 75 (2). 1005-1009 doi:10.1063/1.356506
In(1994, January) Journal of Applied Physics Vol. 75 (2) AIP Publishing

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Wijewarnasuriya, P. S., Boukerche, M., Faurie, J. P. (1990) High‐qualityp‐type HgCdTe grown by molecular beam epitaxy. Journal of Applied Physics, 67 (2). 859-862 doi:10.1063/1.345743
Wijewarnasuriya, P. S., Sivananthan, S. (1998) Arsenic incorporation in HgCdTe grown by molecular beam epitaxy. Applied Physics Letters, 72 (14). 1694-1696 doi:10.1063/1.121154
Rafol, S. B., Wijewarnasuriya, P. S., Sou, I. K., Sivananthan, S., Faurie, J. P. (1993) Shubnikov–de Haas oscillations on as‐grown and annealed molecular‐beam‐epitaxy‐grown Hg1−xCdxTe alloys doped with indium. Journal of Applied Physics, 73 (1). 216-225 doi:10.1063/1.353885
Sou, I. K., Wijewarnasuriya, P. S., Boukerche, M., Faurie, J. P. (1989) Role of the crystallographic orientation on the incorporation of indium in HgCdTe epilayers grown by molecular beam epitaxy. Applied Physics Letters, 55 (10). 954-956 doi:10.1063/1.101734
Sporken, R., Lange, M. D., Sivananthan, S., Faurie, J. P. (1991) Molecular beam epitaxy and characterization of HgCdTe(111)Bon Si(100). Applied Physics Letters, 59 (1). 81-83 doi:10.1063/1.105530
Wijewarnasuriya, P. S., Sou, I. K., Kim, Y. J., Mahavadi, K. K., Sivananthan, S., Boukerche, M., Faurie, J. P. (1987) Electrical properties of Li‐doped Hg1−xCdxTe(100) by molecular beam epitaxy. Applied Physics Letters, 51 (24). 2025-2027 doi:10.1063/1.98281
Mahavadi, K. K., Bleuse, J., Sivananthan, S., Faurie, J. P. (1990) Stimulated emission from a CdTe/HgCdTe separate confinement heterostructure grown by molecular beam epitaxy. Applied Physics Letters, 56 (21). 2077-2079 doi:10.1063/1.102977
Faurie, J. P., Sivananthan, S., Chu, X., Wijewarnasuriya, P. S. (1986) Molecular beam epitaxial growth of a novel strained layer type III superlattice system: HgTe‐ZnTe. Applied Physics Letters, 48 (12). 785-787 doi:10.1063/1.96721
Chu, X., Sivananthan, S., Faurie, J. P. (1987) Hg1−xMnxTe‐CdTe superlattices grown by molecular beam epitaxy. Applied Physics Letters, 50 (10). 597-599 doi:10.1063/1.98092
Olego, D. J., Faurie, J. P., Sivananthan, S., Raccah, P. M. (1985) Optoelectronic properties of Cd1−xZnxTe films grown by molecular beam epitaxy on GaAs substrates. Applied Physics Letters, 47 (11). 1172-1174 doi:10.1063/1.96316
Reno, J., Sou, I. K., Wijewarnasuriya, P. S., Faurie, J. P. (1985) Growth and characterization of Hg1−xMnxTe grown by molecular beam epitaxy. Applied Physics Letters, 47 (11). 1168-1169 doi:10.1063/1.96314
 
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