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Sou, I. K., Wijewarnasuriya, P. S., Boukerche, M., Faurie, J. P. (1989) Role of the crystallographic orientation on the incorporation of indium in HgCdTe epilayers grown by molecular beam epitaxy. Applied Physics Letters, 55 (10). 954-956 doi:10.1063/1.101734

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Reference TypeJournal (article/letter/editorial)
TitleRole of the crystallographic orientation on the incorporation of indium in HgCdTe epilayers grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsSou, I. K.Author
Wijewarnasuriya, P. S.Author
Boukerche, M.Author
Faurie, J. P.Author
Year1989 (September 4)Volume55
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.101734Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8487770Long-form Identifiermindat:1:5:8487770:7
GUID0
Full ReferenceSou, I. K., Wijewarnasuriya, P. S., Boukerche, M., Faurie, J. P. (1989) Role of the crystallographic orientation on the incorporation of indium in HgCdTe epilayers grown by molecular beam epitaxy. Applied Physics Letters, 55 (10). 954-956 doi:10.1063/1.101734
Plain TextSou, I. K., Wijewarnasuriya, P. S., Boukerche, M., Faurie, J. P. (1989) Role of the crystallographic orientation on the incorporation of indium in HgCdTe epilayers grown by molecular beam epitaxy. Applied Physics Letters, 55 (10). 954-956 doi:10.1063/1.101734
In(1989, September) Applied Physics Letters Vol. 55 (10) AIP Publishing

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Wijewarnasuriya, P. S., Boukerche, M., Faurie, J. P. (1990) High‐qualityp‐type HgCdTe grown by molecular beam epitaxy. Journal of Applied Physics, 67 (2). 859-862 doi:10.1063/1.345743
Boukerche, M., Reno, J., Sou, I. K., Hsu, C., Faurie, J. P. (1986) Indium doping of HgCdTe layers during growth by molecular beam epitaxy. Applied Physics Letters, 48 (25). 1733-1735 doi:10.1063/1.96818
Wijewarnasuriya, P. S., Sou, I. K., Kim, Y. J., Mahavadi, K. K., Sivananthan, S., Boukerche, M., Faurie, J. P. (1987) Electrical properties of Li‐doped Hg1−xCdxTe(100) by molecular beam epitaxy. Applied Physics Letters, 51 (24). 2025-2027 doi:10.1063/1.98281
Reno, J., Sou, I. K., Wijewarnasuriya, P. S., Faurie, J. P. (1985) Growth and characterization of Hg1−xMnxTe grown by molecular beam epitaxy. Applied Physics Letters, 47 (11). 1168-1169 doi:10.1063/1.96314
Wijewarnasuriya, P. S., Lange, M. D., Sivananthan, S., Faurie, J. P. (1994) Carrier recombination in indium‐doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy. Journal of Applied Physics, 75 (2). 1005-1009 doi:10.1063/1.356506
Wijewarnasuriya, P. S., Sivananthan, S. (1998) Arsenic incorporation in HgCdTe grown by molecular beam epitaxy. Applied Physics Letters, 72 (14). 1694-1696 doi:10.1063/1.121154
Rafol, S. B., Wijewarnasuriya, P. S., Sou, I. K., Sivananthan, S., Faurie, J. P. (1993) Shubnikov–de Haas oscillations on as‐grown and annealed molecular‐beam‐epitaxy‐grown Hg1−xCdxTe alloys doped with indium. Journal of Applied Physics, 73 (1). 216-225 doi:10.1063/1.353885
Sporken, R., Sivananthan, S., Mahavadi, K. K., Monfroy, G., Boukerche, M., Faurie, J. P. (1989) Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100). Applied Physics Letters, 55 (18). 1879-1881 doi:10.1063/1.102159
Rafol, S. B., Sou, I. K., Faurie, J. P. (1991) Shubnikov–de Haas oscillations on molecular‐beam‐epitaxy‐grown Hg1−xCdxTe alloy doped with indium. Journal of Applied Physics, 70 (8). 4326-4331 doi:10.1063/1.349112
Reno, J., Sou, I. K., Wijewarnasuriya, P. S., Faurie, J. P. (1986) Molecular beam epitaxial growth and characterization of a novel superlattice system: Hg1−xCdxTe‐CdTe. Applied Physics Letters, 48 (16). 1069-1071 doi:10.1063/1.96599
Boukerche, M., Sivananthan, S., Wijewarnasuriya, P.S., Yoo, S.S., DeSouza, M., Sou, I.K., Lange, Matthias, Faurie, J.P. (1991) The Shallow Doping Properties of Mercury Cadmium Telluride as Grown by Molecular Beam Epitaxy. Materials Science Forum, 65. 389-396 doi:10.4028/www.scientific.net/msf.65-66.389
 
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