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Sporken, R., Sivananthan, S., Mahavadi, K. K., Monfroy, G., Boukerche, M., Faurie, J. P. (1989) Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100). Applied Physics Letters, 55 (18). 1879-1881 doi:10.1063/1.102159

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Reference TypeJournal (article/letter/editorial)
TitleMolecular beam epitaxial growth of CdTe and HgCdTe on Si (100)
JournalApplied Physics Letters
AuthorsSporken, R.Author
Sivananthan, S.Author
Mahavadi, K. K.Author
Monfroy, G.Author
Boukerche, M.Author
Faurie, J. P.Author
Year1989 (October 30)Volume55
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.102159Search in ResearchGate
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Mindat Ref. ID8488300Long-form Identifiermindat:1:5:8488300:9
GUID0
Full ReferenceSporken, R., Sivananthan, S., Mahavadi, K. K., Monfroy, G., Boukerche, M., Faurie, J. P. (1989) Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100). Applied Physics Letters, 55 (18). 1879-1881 doi:10.1063/1.102159
Plain TextSporken, R., Sivananthan, S., Mahavadi, K. K., Monfroy, G., Boukerche, M., Faurie, J. P. (1989) Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100). Applied Physics Letters, 55 (18). 1879-1881 doi:10.1063/1.102159
In(1989, October) Applied Physics Letters Vol. 55 (18) AIP Publishing

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Sporken, R., Lange, M. D., Sivananthan, S., Faurie, J. P. (1991) Molecular beam epitaxy and characterization of HgCdTe(111)Bon Si(100). Applied Physics Letters, 59 (1). 81-83 doi:10.1063/1.105530
Mahavadi, K. K., Bleuse, J., Sivananthan, S., Faurie, J. P. (1990) Stimulated emission from a CdTe/HgCdTe separate confinement heterostructure grown by molecular beam epitaxy. Applied Physics Letters, 56 (21). 2077-2079 doi:10.1063/1.102977
Wijewarnasuriya, P. S., Sou, I. K., Kim, Y. J., Mahavadi, K. K., Sivananthan, S., Boukerche, M., Faurie, J. P. (1987) Electrical properties of Li‐doped Hg1−xCdxTe(100) by molecular beam epitaxy. Applied Physics Letters, 51 (24). 2025-2027 doi:10.1063/1.98281
Sporken, R., Lange, M. D., Masset, C., Faurie, J. P. (1990) Molecular beam epitaxial growth of CdTe on 5‐in.‐diam Si (100). Applied Physics Letters, 57 (14). 1449-1451 doi:10.1063/1.103366
Lange, M. D., Sporken, R., Mahavadi, K. K., Faurie, J. P., Nakamura, Y., Otsuka, N. (1991) Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)Bsubstrates. Applied Physics Letters, 58 (18). 1988-1990 doi:10.1063/1.105041
Monfroy, G., Sivananthan, S., Chu, X., Faurie, J. P., Knox, R. D., Staudenmann, J. L. (1986) Molecular beam epitaxial growth of a novel strained‐layer superlattice system: CdTe‐ZnTe. Applied Physics Letters, 49 (3). 152-154 doi:10.1063/1.97208
Lange, M. D., Sporken, R., Mahavadi, K. K., Faurie, J. P., Nakamura, Y., Otsuka, N. (1991) Response to ‘‘Comment on ‘Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)B substrates’ ’’. Applied Physics Letters, 59 (16). 2055-2056 doi:10.1063/1.106131
Sivananthan, S., Chu, X., Boukerche, M., Faurie, J. P. (1985) Growth of Hg1−xZnxTe by molecular beam epitaxy on a GaAs(100) substrate. Applied Physics Letters, 47 (12). 1291-1293 doi:10.1063/1.96308
Faurie, J. P., Sivananthan, S., Boukerche, M., Reno, J. (1984) Molecular beam epitaxial growth of high quality HgTe and Hg1−xCdxTe onto GaAs(001) substrates. Applied Physics Letters, 45 (12). 1307-1309 doi:10.1063/1.95129
Sou, I. K., Wijewarnasuriya, P. S., Boukerche, M., Faurie, J. P. (1989) Role of the crystallographic orientation on the incorporation of indium in HgCdTe epilayers grown by molecular beam epitaxy. Applied Physics Letters, 55 (10). 954-956 doi:10.1063/1.101734
Xin, Y., Rujirawat, S., Browning, N. D., Sporken, R., Sivananthan, S., Pennycook, S. J., Dhar, N. K. (1999) The effect of As passivation on the molecular beam epitaxial growth of high-quality single-domain CdTe(111)B on Si(111) substrates. Applied Physics Letters, 75 (3). 349-351 doi:10.1063/1.124371
 
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