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Wu, X. H., Brown, L. M., Kapolnek, D., Keller, S., Keller, B., DenBaars, S. P., Speck, J. S. (1996) Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3. Journal of Applied Physics, 80 (6). 3228-3237 doi:10.1063/1.363264

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Reference TypeJournal (article/letter/editorial)
TitleDefect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3
JournalJournal of Applied Physics
AuthorsWu, X. H.Author
Brown, L. M.Author
Kapolnek, D.Author
Keller, S.Author
Keller, B.Author
DenBaars, S. P.Author
Speck, J. S.Author
Year1996 (September 15)Volume80
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.363264Search in ResearchGate
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Mindat Ref. ID5082910Long-form Identifiermindat:1:5:5082910:3
GUID0
Full ReferenceWu, X. H., Brown, L. M., Kapolnek, D., Keller, S., Keller, B., DenBaars, S. P., Speck, J. S. (1996) Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3. Journal of Applied Physics, 80 (6). 3228-3237 doi:10.1063/1.363264
Plain TextWu, X. H., Brown, L. M., Kapolnek, D., Keller, S., Keller, B., DenBaars, S. P., Speck, J. S. (1996) Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3. Journal of Applied Physics, 80 (6). 3228-3237 doi:10.1063/1.363264
In(1996, September) Journal of Applied Physics Vol. 80 (6) AIP Publishing

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Wu, X. H., Kapolnek, D., Tarsa, E. J., Heying, B., Keller, S., Keller, B. P., Mishra, U. K., DenBaars, S. P., Speck, J. S. (1996) Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN. Applied Physics Letters, 68 (10). 1371-1373 doi:10.1063/1.116083
Kapolnek, D., Wu, X. H., Heying, B., Keller, S., Keller, B. P., Mishra, U. K., DenBaars, S. P., Speck, J. S. (1995) Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire. Applied Physics Letters, 67 (11). 1541-1543 doi:10.1063/1.114486
Heying, B., Wu, X. H., Keller, S., Li, Y., Kapolnek, D., Keller, B. P., DenBaars, S. P., Speck, J. S. (1996) Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films. Applied Physics Letters, 68 (5). 643-645 doi:10.1063/1.116495
Keller, S., Keller, B. P., Wu, Y.‐F., Heying, B., Kapolnek, D., Speck, J. S., Mishra, U. K., DenBaars, S. P. (1996) Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition. Applied Physics Letters, 68 (11). 1525-1527 doi:10.1063/1.115687
Sink, R. K., Keller, S., Keller, B. P., Babić, D. I., Holmes, A. L., Kapolnek, D., DenBaars, S. P., Bowers, J. E., Wu, X. H., Speck, J. S. (1996) Cleaved GaN facets by wafer fusion of GaN to InP. Applied Physics Letters, 68 (15). 2147-2149 doi:10.1063/1.115613
Wu, X. H., Fini, P., Keller, S., Tarsa, E. J., Heying, B., Mishra, U. K., DenBaars, S. P., Speck, J. S. (1996) Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 35. doi:10.1143/jjap.35.l1648
Keller, S., Fichtenbaum, N. A., Wu, F., Brown, D., Rosales, A., DenBaars, S. P., Speck, J. S., Mishra, U. K. (2007) Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition. Journal of Applied Physics, 102 (8). 83546pp. doi:10.1063/1.2801406
Keller, S., Dora, Y., Wu, F., Chen, X., Chowdury, S., DenBaars, S. P., Speck, J. S., Mishra, U. K. (2010) Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition. Applied Physics Letters, 97 (14). 142109pp. doi:10.1063/1.3499428
Marchand, H., Wu, X. H., Ibbetson, J. P., Fini, P. T., Kozodoy, P., Keller, S., Speck, J. S., DenBaars, S. P., Mishra, U. K. (1998) Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition. Applied Physics Letters, 73 (6). 747-749 doi:10.1063/1.121988
Brown, David F., Keller, Stacia, Wu, Feng, Speck, James S., DenBaars, Steven P., Mishra, Umesh K. (2008) Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition. Journal of Applied Physics, 104 (2). 24301pp. doi:10.1063/1.2956329
Fini, P., Wu, X., Tarsa, E. J., Golan, Y., Srikant, V., Keller, S., Denbaars, S. P., Speck, J. S. (1998) The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 37. 4460-4466 doi:10.1143/jjap.37.4460
 
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