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(1996, September) Journal of Applied Physics Vol. 80 (6) AIP Publishing

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Reference TypeJournal (issue)
JournalJournal of Applied Physics
Year1996 (September)Volume80
Issue<   6   >
PublisherAIP Publishing
Mindat Ref. ID5082786Long-form Identifiermindat:1:5:5082786:8
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Full Reference(1996, September) Journal of Applied Physics Vol. 80 (6) AIP Publishing
Plain Text(1996, September) Journal of Applied Physics Vol. 80 (6) AIP Publishing
In(1996) Journal of Applied Physics Vol. 80. AIP Publishing

Contains

Williamson, R. L., Miles, M. J. (1996) Studying topography and sub‐surface structure of 8CB liquid crystal films with shear‐force microscopy. Journal of Applied Physics, 80 (6). 3143-3146 doi:10.1063/1.363252
Plompen, A. J. M., Munnik, F., RĂ€isĂ€nen, J., WĂ€tjen, U. (1996) Stopping powers of 200–3200 keV4He and 550–1550 keV1H ions in polyimide. Journal of Applied Physics, 80 (6). 3147-3154 doi:10.1063/1.363277
RĂŒetschi, M., FĂŒnfschilling, J., GĂŒntherodt, H.‐J. (1996) Creation of submicron orientational structures in thin liquid crystal polymer layers. Journal of Applied Physics, 80 (6). 3155-3161 doi:10.1063/1.363253
Hagen, R., Zobel, O., Sahr, O., Biber, M., Eckl, M., Strohriegl, P., Eisenbach, C.‐D., Haarer, D. (1996) Poling and orientational relaxation: Comparison of nonlinear optical main‐chain and side‐chain polymers. Journal of Applied Physics, 80 (6). 3162-3166 doi:10.1063/1.363254
Costela, A., Garcia‐Moreno, I., Figuera, J. M., Amat‐Guerri, F., Mallavia, R., Santa‐Maria, M. D., Sastre, R. (1996) Solid‐state dye lasers based on modified rhodamine 6G dyes copolymerized with methacrylic monomers. Journal of Applied Physics, 80 (6). 3167-3173 doi:10.1063/1.363255
Yeh, C., Bergman, L. (1996) Pulse shepherding in nonlinear fiber optics. Journal of Applied Physics, 80 (6). 3174-3178 doi:10.1063/1.363256
Kan’an, Ayman M., LiKamWa, Patrick, Mitra‐Dutta, , Pamulapati, Jagadeesh (1996) Area‐selective disordering of multiple quantum well structures and its applications to all‐optical devices. Journal of Applied Physics, 80 (6). 3179-3183 doi:10.1063/1.363257
Hashimoto, Tadanori, Yamada, Tetsuya, Yoko, Toshinobu (1996) Third‐order nonlinear optical properties of sol–gel derived α‐Fe2O3, γ‐Fe2O3, and Fe3O4thin films. Journal of Applied Physics, 80 (6). 3184-3190 doi:10.1063/1.363258
Kushwaha, M. S., Djafari‐Rouhani, B. (1996) Complete acoustic stop bands for cubic arrays of spherical liquid balloons. Journal of Applied Physics, 80 (6). 3191-3195 doi:10.1063/1.363259
DzierĆŒÈ©ga, K., Musiol/, K., Benck, E. C., Roberts, J. R. (1996) Electron density measurement in a rf helium plasma by laser‐collision induced fluorescence method. Journal of Applied Physics, 80 (6). 3196-3201 doi:10.1063/1.363260
Fukuzawa, Tsuyoshi, Obata, Kouji, Kawasaki, Hiroharu, Shiratani, Masaharu, Watanabe, Yukio (1996) Detection of particles in rf silane plasmas using photoemission method. Journal of Applied Physics, 80 (6). 3202-3207 doi:10.1063/1.363273
Miki, Megumu, Wada, Atsushi (1996) Guiding of electrical discharges under atmospheric air by ultraviolet laser‐produced plasma channel. Journal of Applied Physics, 80 (6). 3208-3214 doi:10.1063/1.363261
Hebner, G. A. (1996) Metastable chlorine ion temperature and drift velocity in an inductively coupled plasma. Journal of Applied Physics, 80 (6). 3215-3220 doi:10.1063/1.363262
Chu, S. N. G., Logan, R. A., Geva, M., Ha, N. T., Karlicek, R. F. (1996) Substitutional, interstitial, and neutral zinc incorporation into InP grown by atmospheric pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 80 (6). 3221-3227 doi:10.1063/1.363263
Wu, X. H., Brown, L. M., Kapolnek, D., Keller, S., Keller, B., DenBaars, S. P., Speck, J. S. (1996) Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3. Journal of Applied Physics, 80 (6). 3228-3237 doi:10.1063/1.363264
Nishino, H., Sugiyama, I., Nishijima, Y. (1996) Misfit stress relaxation mechanism in CdTe(100) and CdTe/ZnTe(100) on a GaAs(100) highly mismatched heteroepitaxial layer. Journal of Applied Physics, 80 (6). 3238-3243 doi:10.1063/1.363265
Yonenaga, Ichiro, Sumino, Koji (1996) Mechanical strength of GeSi alloy. Journal of Applied Physics, 80 (6). 3244-3247 doi:10.1063/1.363266
Tang, Wenhui, Jing, Fuqian, Zhang, Ruoqi, Hu, Jinbiao (1996) Thermal relaxation phenomena across the metal/window interface and its significance to shock temperature measurements of metals. Journal of Applied Physics, 80 (6). 3248-3253 doi:10.1063/1.363267
Ashida, Yuh, Yamamoto, Masahiro, Naito, Shizuo, Mabuchi, Mahito, Hashino, Tomoyasu (1996) Measurements of Young’s modulus and the modulus of rigidity of the solid solution of hydrogen in zirconium between 300 and 1300 K. Journal of Applied Physics, 80 (6). 3254-3258 doi:10.1063/1.363274
Ashida, Yuh, Yamamoto, Masahiro, Naito, Shizuo, Mabuchi, Mahito, Hashino, Tomoyasu (1996) Calculation of LindgĂ„rd and Mouritsen’s free energy using recently measured moduli of elasticity for hydrogen in zirconium. Journal of Applied Physics, 80 (6). 3259-3266 doi:10.1063/1.363276
Machcha, Ashok R., Nemat‐Nasser, Sia (1996) Effects of geometry in pressure–shear and normal plate impact recovery experiments: Three‐dimensional finite‐element simulation and experimental observation. Journal of Applied Physics, 80 (6). 3267-3274 doi:10.1063/1.363268
Benton, J. L., Stolk, P. A., Eaglesham, D. J., Jacobson, D. C., Cheng, J.‐Y., Poate, J. M., Ha, N. T., Haynes, T. E., Myers, S. M. (1996) Iron gettering mechanisms in silicon. Journal of Applied Physics, 80 (6). 3275-3284 doi:10.1063/1.363236
Wang, X. Y., Yu, Yi‐Kuo, Taylor, P. L. (1996) Kinetic theory of phase separation induced by nonuniform photopolymerization. Journal of Applied Physics, 80 (6). 3285-3290 doi:10.1063/1.363237
Watanabe, Minoru, Okajima, Masaki (1996) Dependence of InGaP/InGaAlP heterointerface smoothness on substrate misorientation. Journal of Applied Physics, 80 (6). 3291-3296 doi:10.1063/1.363238
Han, Eun‐Mi, Do, Lee‐Mi, Fujihira, Masamichi, Inada, Hiroshi, Shirota, Yasuhiko (1996) Scanning force microscopy of organic thin‐film amorphous hole transport materials. Journal of Applied Physics, 80 (6). 3297-3305 doi:10.1063/1.363239
Jin, S., Li, X. N., Zhang, Z., Dong, C., Gong, Z. X., Bender, H., Ma, T. C. (1996) Ion beam syntheses and microstructure studies of a new FeSi2phase. Journal of Applied Physics, 80 (6). 3306-3309 doi:10.1063/1.363240
Bernaerts, D., Tendeloo, G. Van, Amelinckx, S., Hevesi, K., Gensterblum, G., Yu, L. M., Pireaux, J.‐J., Grey, F., Bohr, J. (1996) Structural defects and epitaxial rotation of C60and C70(111) films on GeS(001). Journal of Applied Physics, 80 (6). 3310-3318 doi:10.1063/1.363241
Komatsu, Shojiro (1996) Stable anionic site on hydrogenated (111) surface of diamond resulting from hydrogen atom removal under chemical vapor deposition conditions. Journal of Applied Physics, 80 (6). 3319-3326 doi:10.1063/1.363242
González, L., González, Y., Aragón, G., Castro, M. J., Dotor, M. L., Dunstan, D. J. (1996) Relaxation behavior of undoped InxGa1−xP 0.5Journal of Applied Physics, 80 (6). 3327-3332 doi:10.1063/1.363243
Mendoza‐Galván, A., Martínez, G., Lozada‐Morales, R. (1996) Microstructural effects of thermal annealing on CdS films. Journal of Applied Physics, 80 (6). 3333-3337 doi:10.1063/1.363244
Chichibu, S., Nakanishi, H., Shirakata, S., Isomura, S., Harada, Y., Matsumoto, S., Higuchi, H., Kariya, T. (1996) Preparation and characterization of CuAlxGa1−xSe2alloy layers grown by low‐pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 80 (6). 3338-3345 doi:10.1063/1.363245
Persson, Leif, El Bouanani, Mohamed, Hult, Mikael, Whitlow, Harry J., Andersson, Margaretha, Bubb, Ian F., Johnston, Peter N., Walker, Scott R., Cohen, David D., Dytlewski, Nick, Zaring, Carina, Östling, Mikael (1996) Interfacial reaction studies of Cr, Ni, Ti, and Pt metallization on InP. Journal of Applied Physics, 80 (6). 3346-3354 doi:10.1063/1.363246
Lo, Ikai, Cheng, J.‐P., Chen, Y. F., Mitchel, W. C. (1996) Effective mass of two‐dimensional electron gas in ή‐doped Al0.48In0.52As/Ga0.47In0.53As quantum wells. Journal of Applied Physics, 80 (6). 3355-3359 doi:10.1063/1.363247
Miller, Mark S., Malm, Jan‐Olle, Pistol, Mats‐Erik, Jeppesen, So/ren, Kowalski, Bernhard, Georgsson, Kristina, Samuelson, Lars (1996) Stacking InAs islands and GaAs layers: Strongly modulated one‐dimensional electronic systems. Journal of Applied Physics, 80 (6). 3360-3364 doi:10.1063/1.363248
Nilsson, Hans‐Erik, Sannemo, Ulf, Petersson, C. Sture (1996) Monte Carlo simulation of electron transport in 4H–SiC using a two‐band model with multiple minima. Journal of Applied Physics, 80 (6). 3365-3369 doi:10.1063/1.363249
Cuevas, AndrĂ©s, Basore, Paul A., Giroult‐Matlakowski, GaĂ«lle, Dubois, Christiane (1996) Surface recombination velocity of highly dopedn‐type silicon. Journal of Applied Physics, 80 (6). 3370-3375 doi:10.1063/1.363250
Stasch, R., Hey, R., Asche, M., Wacker, A., Schöll, E. (1996) Temperature persistent bistability and threshold switching in a single barrier heterostructure hot‐electron diode. Journal of Applied Physics, 80 (6). 3376-3380 doi:10.1063/1.363251
Marée, C. H. M., Roosendaal, S. J., Savenije, T. J., Schropp, R. E. I., Schaafsma, T. J., Habraken, F. H. P. M. (1996) Photovoltaic effects in porphyrin polymer films and heterojunctions. Journal of Applied Physics, 80 (6). 3381-3389 doi:10.1063/1.363203
AraĂșjo‐Moreira, F. M., Ortiz, W. A., de Lima, O. F. (1996) Exponential critical state model applied to ac susceptibility data for the superconductor YBa2Cu3O7−ή. Journal of Applied Physics, 80 (6). 3390-3395 doi:10.1063/1.363204
Veith, M., Eick, T., Brodkorb, W., Manzel, M., Bruchlos, H., Köhler, T., Schmidt, H.‐G., Steinbeiss, E., Fuchs, H.‐J., Schlenga, K., Hechtfischer, G., MĂŒller, P. (1996) Fabrication and properties of intrinsic Josephson junctions in thin films of Tl‐Ba‐Ca‐Cu‐O. Journal of Applied Physics, 80 (6). 3396-3400 doi:10.1063/1.363205
Nappi, C., Cristiano, R., Frunzio, L., Pagano, S., Lisitskii, M. P. (1996) On the magnetic field dependence of the critical current in small irregular polygonal Josephson junctions. Journal of Applied Physics, 80 (6). 3401-3407 doi:10.1063/1.363206
Daykin, A. C., Jakubovics, J. P. (1996) Magnetization imaging at high spatial resolution using transmission electron microscopy. Journal of Applied Physics, 80 (6). 3408-3411 doi:10.1063/1.363207
Glorieux, C., Caerels, J., Thoen, J. (1996) Magnetic phase transition of gadolinium studied by acoustically detected magnetocaloric effect. Journal of Applied Physics, 80 (6). 3412-3421 doi:10.1063/1.363208
Kopcewicz, M., Grabias, A. (1996) Mössbauer study of the surface crystallization of the amorphous and nanocrystalline Fe81Zr7B12alloy. Journal of Applied Physics, 80 (6). 3422-3425 doi:10.1063/1.363209
SĂŒrig, C., Hempel, K. A. (1996) Interaction effects in particulate recording media studied by ferromagnetic resonance. Journal of Applied Physics, 80 (6). 3426-3429 doi:10.1063/1.363210
Kamigaki, Yoshiaki, Yokogawa, Ken’etsu, Hashimoto, Takashi, Uemura, Toshio (1996) Paramagnetic defect spin centers in low‐pressure chemical‐vapor‐deposited silicon‐dioxide films. Journal of Applied Physics, 80 (6). 3430-3434 doi:10.1063/1.363211
Juda, U., Scheerer, O., Höhne, M., Riemann, H., Schilling, H.‐J., Donecker, J., Gerhardt, A. (1996) Oxygen‐related 1‐platinum defects in silicon: An electron paramagnetic resonance study. Journal of Applied Physics, 80 (6). 3435-3444 doi:10.1063/1.363212
Shur, D., Rosenman, G. (1996) Figures of merit for ferroelectric electron emission cathodes. Journal of Applied Physics, 80 (6). 3445-3450 doi:10.1063/1.363213
Li, Jie‐Fang, Viehland, Dwight (1996) The nonlinear, complex, induced‐piezoelectric response of Pb(Mg1/3Nb2/3)O3–PbTiO3relaxors. Journal of Applied Physics, 80 (6). 3451-3456 doi:10.1063/1.363214
Lee, P. C. Y., Wang, J. (1996) Frequency–temperature relations of thickness‐shear and flexural vibrations of contoured quartz resonators. Journal of Applied Physics, 80 (6). 3457-3465 doi:10.1063/1.363215
Nishi, Kenichi, Mirin, Richard, Leonard, Devin, Medeiros‐Ribeiro, Gilberto, Petroff, Pierre M., Gossard, Arthur C. (1996) Structural and optical characterization of InAs/InGaAs self‐assembled quantum dots grown on (311)BGaAs. Journal of Applied Physics, 80 (6). 3466-3470 doi:10.1063/1.363216
Fan, W. J., Li, M. F., Chong, T. C., Xia, J. B. (1996) Valence hole subbands and optical gain spectra of GaN/Ga1−xAlxN strained quantum wells. Journal of Applied Physics, 80 (6). 3471-3478 doi:10.1063/1.363217
Pecharromån, C., Ocaña, M., Serna, C. J. (1996) Optical constants of tetragonal and cubic zirconias in the infrared. Journal of Applied Physics, 80 (6). 3479-3483 doi:10.1063/1.363218
Dimoulas, A., Davidow, J., Giapis, K. P., Georgakilas, A., Halkias, G., Kornelios, N. (1996) Electron density effects in the modulation spectroscopy of strained and lattice‐matched InGaAs/InAlAs/InP high‐electron‐mobility transistor structures. Journal of Applied Physics, 80 (6). 3484-3487 doi:10.1063/1.363219
Jaekel, C., Kyas, G., Roskos, H. G., Kurz, H., Kabius, B., Meertens, D., Prusseit, W., Utz, B. (1996) Microwave properties and strain‐induced lattice defects ofc‐axis‐oriented YBa2Cu3O7−ήthin films on silicon. Journal of Applied Physics, 80 (6). 3488-3492 doi:10.1063/1.363220
Jia, Y. B., Grimmeiss, H. G. (1996) Photoexcited states ofDXcenters in Si doped AlxGa1−xAs. Journal of Applied Physics, 80 (6). 3493-3503 doi:10.1063/1.363637
Ivanov, I. G., Hallin, C., Henry, A., Kordina, O., JanzĂ©n, E. (1996) Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC. Journal of Applied Physics, 80 (6). 3504-3508 doi:10.1063/1.363221
Chen, H., Tong, J., Hu, Z., Shi, D. T., Wu, G. H., Chen, K.‐T., George, M. A., Collins, W. E., Burger, A., James, R. B., Stahle, C. M., Bartlett, L. M. (1996) Low‐temperature photoluminescence of detector grade Cd1−xZnxTe crystal treated by different chemical etchants. Journal of Applied Physics, 80 (6). 3509-3512 doi:10.1063/1.363222
Nishikawa, Hiroyuki, Watanabe, Eiki, Ito, Daisuke, Sakurai, Yuryo, Nagasawa, Kaya, Ohki, Yoshimichi (1996) Visible photoluminescence from Si clusters in γ‐irradiated amorphous SiO2. Journal of Applied Physics, 80 (6). 3513-3517 doi:10.1063/1.363223
Skuja, L., Tanimura, K., Itoh, N. (1996) Correlation between the radiation‐induced intrinsic 4.8 eV optical absorption and 1.9 eV photoluminescence bands in glassy SiO2. Journal of Applied Physics, 80 (6). 3518-3525 doi:10.1063/1.363224
Oberacker, T. A., Schlotterbeck, G., Bilger, G., Braunger, D., Schock, H.‐W. (1996) Field quenching effects in polycrystalline SrS:Pb and SrS:Ce,Pb thin films for electroluminescence devices. Journal of Applied Physics, 80 (6). 3526-3531 doi:10.1063/1.363225
Ünal, B., Bayliss, S. C. (1996) Electroluminescence and photovoltaic effects of anodically fabricated metal/porous Si/Si sandwich structures based onn‐type ultraviolet‐porous Si. Journal of Applied Physics, 80 (6). 3532-3539 doi:10.1063/1.363226
Rashid, A. B. M. Harun‐ur, Kishi, Masato, Katoda, Takashi (1996) Raman spectroscopic analysis of stress on GaAs‐SiO2interface and the effect of stress on tin diffusion in GaAs. Journal of Applied Physics, 80 (6). 3540-3545 doi:10.1063/1.363271
Meiling, H., van Sark, W. G. J. H. M., Bezemer, J., van der Weg, W. F. (1996) Deposition‐rate reduction through improper substrate‐to‐electrode attachment in very‐high‐frequency deposition ofa‐Si:H. Journal of Applied Physics, 80 (6). 3546-3551 doi:10.1063/1.363227
Terranova, M. L., Rossi, M., Vitali, G. (1996) Structural investigation of the titanium/diamond film interface. Journal of Applied Physics, 80 (6). 3552-3560 doi:10.1063/1.363228
Harilal, S. S., Issac, Riju C., Bindhu, C. V., Nampoori, V. P. N., Vallabhan, C. P. G. (1996) Temporal and spatial evolution of C2in laser induced plasma from graphite target. Journal of Applied Physics, 80 (6). 3561-3565 doi:10.1063/1.363229
Quenter, D., Doderer, T., Huebener, R. P. (1996) Microwave field distribution in superconducting thin film devices. Journal of Applied Physics, 80 (6). 3566-3573 doi:10.1063/1.363230
Altermatt, Pietro P., Heiser, Gernot, Dai, Ximing, JĂŒrgens, Jörn, Aberle, Armin G., Robinson, Steven J., Young, Trevor, Wenham, Stuart R., Green, Martin A. (1996) Rear surface passivation of high‐efficiency silicon solar cells by a floating junction. Journal of Applied Physics, 80 (6). 3574-3586 doi:10.1063/1.363231
Wen, Q., Yu, Ning, Clarke, D. R. (1996) Epitaxial thin‐film ruby as an ion‐irradiation damage sensor. Journal of Applied Physics, 80 (6). 3587-3589 doi:10.1063/1.363232
Look, D. C., Fang, Z.‐Q. (1996) Simple measurement of 300 K electron capture cross section for EL2 in GaAs. Journal of Applied Physics, 80 (6). 3590-3591 doi:10.1063/1.363233
Lofland, S. E., Bhagat, S. M., Tyagi, S. D., Mukovskii, Y. M., Karabashev, S. G., Balbashov, A. M. (1996) Giant microwave magneto‐impedance in a single crystal of La0.7Sr0.3MnO3: The effect of ferromagnetic antiresonance. Journal of Applied Physics, 80 (6). 3592-3594 doi:10.1063/1.363275
Lefebvre, Kevin R., Anwar, A. F. M. (1996) Electron and hole escape times in single quantum wells. Journal of Applied Physics, 80 (6). 3595-3597 doi:10.1063/1.363272
Basler, M., Krech, W., Platov, K. Yu. (1996) Antiphase locking in a two‐dimensional Josephson junction array. Journal of Applied Physics, 80 (6). 3598-3600 doi:10.1063/1.363234
Lee, Heayeon, Kawai, Tomoji (1996) Photoelectric properties of Copper‐phthalocyanine/PbTe multilayer. Journal of Applied Physics, 80 (6). 3601-3603 doi:10.1063/1.363235
Su, Q., Morillo, J., Wen, Y., Wuttig, M. (1996) Young’s modulus of amorphous Terfenol‐D thin films. Journal of Applied Physics, 80 (6). 3604-3606 doi:10.1063/1.363269
Sheng, Shuran, Kong, Guanglin, Liao, Xianbo (1996) Improvement of the stability of hydrogenated amorphous silicon films by intermittent illumination treatment at elevated temperature. Journal of Applied Physics, 80 (6). 3607-3609 doi:10.1063/1.363270

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