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Nishino, H., Sugiyama, I., Nishijima, Y. (1996) Misfit stress relaxation mechanism in CdTe(100) and CdTe/ZnTe(100) on a GaAs(100) highly mismatched heteroepitaxial layer. Journal of Applied Physics, 80 (6). 3238-3243 doi:10.1063/1.363265

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Reference TypeJournal (article/letter/editorial)
TitleMisfit stress relaxation mechanism in CdTe(100) and CdTe/ZnTe(100) on a GaAs(100) highly mismatched heteroepitaxial layer
JournalJournal of Applied Physics
AuthorsNishino, H.Author
Sugiyama, I.Author
Nishijima, Y.Author
Year1996 (September 15)Volume80
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.363265Search in ResearchGate
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Mindat Ref. ID5082912Long-form Identifiermindat:1:5:5082912:1
GUID0
Full ReferenceNishino, H., Sugiyama, I., Nishijima, Y. (1996) Misfit stress relaxation mechanism in CdTe(100) and CdTe/ZnTe(100) on a GaAs(100) highly mismatched heteroepitaxial layer. Journal of Applied Physics, 80 (6). 3238-3243 doi:10.1063/1.363265
Plain TextNishino, H., Sugiyama, I., Nishijima, Y. (1996) Misfit stress relaxation mechanism in CdTe(100) and CdTe/ZnTe(100) on a GaAs(100) highly mismatched heteroepitaxial layer. Journal of Applied Physics, 80 (6). 3238-3243 doi:10.1063/1.363265
In(1996, September) Journal of Applied Physics Vol. 80 (6) AIP Publishing

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Nishino, H., Saito, T., Nishijima, Y. (1996) ratio dependence of surface macrodefects in CdTe/ZnTe/GaAs(100) growth by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 165 (3). 227-232 doi:10.1016/0022-0248(96)00177-7
Sugiyama, Iwao, Nishijima, Yoshito (1995) Polarity of a (111)‐oriented CdTe layer grown on a (100) Si substrate. Applied Physics Letters, 66 (21). 2798-2800 doi:10.1063/1.113479
Lee, H. S., Park, H. L., Kim, T. W. (2006) Characteristics of CdTe∕ZnTe quantum dots grown on GaAs (100) and Si (100) substrates. Applied Physics Letters, 88 (18). 181914pp. doi:10.1063/1.2201865
Tatsuoka, H., Kuwabara, H., Nakanishi, Y., Fujiyasu, H. (1990) Strain relaxation of CdTe(100) layers grown by hot‐wall epitaxy on GaAs(100) substrates. Journal of Applied Physics, 67 (11). 6860-6864 doi:10.1063/1.346079
Nishino, Hironori, Nishijima, Yoshito (1997) Influence of step motion on hillock formation in CdTe(100) grown on GaAs(100) by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 173 (3). 330-335 doi:10.1016/s0022-0248(96)00782-8
Lee, H. S., Park, H. L., Lee, I., Kim, T. W. (2007) Formation and optical properties of CdTe∕ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates. Journal of Applied Physics, 102 (10). 103507pp. doi:10.1063/1.2812557
Cohen‐Solal, G., Bailly, F., Barbé, M. (1986) Model for heteroepitaxial growth of CdTe on (100) oriented GaAs substrate. Applied Physics Letters, 49 (22). 1519-1521 doi:10.1063/1.97320
Nishino, Hironori, Murakami, Satoshi, Nishijima, Yoshito (1999) Structure and Surface Properties of Metalorganic Vapor Phase Epitaxial CdTe and HgCdTe(111)B Layers Grown on Vicinal GaAs(100) Subatrates. Japanese Journal of Applied Physics, 38. 5775-5782 doi:10.1143/jjap.38.5775
Sugiyama, I., Hobbs, A., Ueda, O., Shinohara, K., Takigawa, H. (1991) Structural properties of CdTe‐ZnTe strained‐layer superlattice grown on GaAs by hot‐wall epitaxy. Applied Physics Letters, 58 (24). 2755-2757 doi:10.1063/1.104776
Tatsuoka, H., Kuwabara, H., Nakanishi, Y., Fujiyasu, H. (1990) CdTe (111)B growth on oriented and misoriented GaAs (100) grown by hot‐wall epitaxy. Journal of Applied Physics, 68 (9). 4592-4597 doi:10.1063/1.346167
Nishino, Hironori, Nishijima, Yoshito (1996) CdTe(111)B/Si(100) structure grown by metalorganic vapor phase epitaxy with Te adsorption and annealing. Journal of Crystal Growth, 167 (3). 488-494 doi:10.1016/0022-0248(96)00288-6
 
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