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Hurd, C. M., McKinnon, W. R. (1996) Modeling a backgated GaAs metal–semiconductor–metal photodetector. Journal of Applied Physics, 80 (9). 5449-5453 doi:10.1063/1.362733

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Reference TypeJournal (article/letter/editorial)
TitleModeling a backgated GaAs metal–semiconductor–metal photodetector
JournalJournal of Applied Physics
AuthorsHurd, C. M.Author
McKinnon, W. R.Author
Year1996 (November)Volume80
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.362733Search in ResearchGate
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Mindat Ref. ID5083334Long-form Identifiermindat:1:5:5083334:6
GUID0
Full ReferenceHurd, C. M., McKinnon, W. R. (1996) Modeling a backgated GaAs metal–semiconductor–metal photodetector. Journal of Applied Physics, 80 (9). 5449-5453 doi:10.1063/1.362733
Plain TextHurd, C. M., McKinnon, W. R. (1996) Modeling a backgated GaAs metal–semiconductor–metal photodetector. Journal of Applied Physics, 80 (9). 5449-5453 doi:10.1063/1.362733
In(1996, November) Journal of Applied Physics Vol. 80 (9) AIP Publishing

See Also

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Hurd, C. M., McKinnon, W. R. (1995) Modeling the effect of a buried layer in GaAs metal‐semiconductor‐metal photodetectors. Journal of Applied Physics, 77 (8). 4077-4087 doi:10.1063/1.359491
Hurd, C. M., McKinnon, W. R. (1997) Double-peaked decay of transient photocurrents in GaAs metal–semiconductor–metal photodetectors. Journal of Applied Physics, 82 (2). 722-728 doi:10.1063/1.365605
Vickers, A. J., Hassan, M. A., Mashakekhi, H. R., Griguoli, A., Hopkinson, M. (1996) Study of a backgated metal‐semiconductor‐metal photodetector. Applied Physics Letters, 68 (6). 815-817 doi:10.1063/1.116542
Hurd, C. M., McKinnon, W. R. (1994) Modeling the behavior of photogenerated charge in semi‐insulating GaAs. Journal of Applied Physics, 75 (1). 596-603 doi:10.1063/1.355845
Hurd, C. M., McKinnon, W. R. (1995) Two‐dimensional numerical simulation of the pulse response of a semi‐insulating InGaAs:Fe photodetector. Journal of Applied Physics, 78 (9). 5756-5764 doi:10.1063/1.359638
Hurd, C. M., McKinnon, W. R. (1996) Bias voltage propagation in a semi‐insulator: Effect on the impulse response of an InGaAs:Fe planar photodetector. Journal of Applied Physics, 79 (3). 1578-1582 doi:10.1063/1.361001
Koscielniak, W. C., Kolbas, R. M., Littlejohn, M. A., Licznerski, B. W. (1988) Photocurrent enhancement in a GaAs metal‐semiconductor‐metal photodetector due to ultrasmall Au islands. Applied Physics Letters, 52 (12). 987-989 doi:10.1063/1.99250
Hurd, C. M., McAlister, S. P., McKinnon, W. R., Stewart, B. R., Day, D. J., Mandeville, P., SpringThorpe, A. J. (1988) Modeling parallel conduction in GaAs/AlxGa1−xAs heterostructures. Journal of Applied Physics, 63 (9). 4706-4713 doi:10.1063/1.340126
McKinnon, W. R., Hurd, C. M. (1987) Conduction in illuminated GaAs/AlxGa1−xAs heterostructures. II. Calculation. Journal of Applied Physics, 61 (6). 2250-2256 doi:10.1063/1.337986
Koscielniak, W. C., Pelouard, J. L., Littlejohn, M. A. (1989) Dynamic behavior of photocarriers in a GaAs metal‐semiconductor‐metal photodetector with sub‐half‐micron electrode pattern. Applied Physics Letters, 54 (6). 567-569 doi:10.1063/1.100933
Jagannath, C., Choudhury, A. N. M. Masum, Negri, A., Elman, B., Haugsjaa, P. (1991) High‐speed 1.3 μm InGaAs/GaAs metal‐semiconductor‐metal photodetector. Applied Physics Letters, 58 (4). 325-327 doi:10.1063/1.104675
 
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