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Cho, Yong-Hoon, Choe, Byung-Doo, Kim, Y., Lim, H. (1997) Interface states in In0.5Ga0.5P/AlxGa1−xAs heterostructures grown by liquid phase epitaxy. Journal of Applied Physics, 81 (11). 7362-7366 doi:10.1063/1.365334

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Reference TypeJournal (article/letter/editorial)
TitleInterface states in In0.5Ga0.5P/AlxGa1−xAs heterostructures grown by liquid phase epitaxy
JournalJournal of Applied Physics
AuthorsCho, Yong-HoonAuthor
Choe, Byung-DooAuthor
Kim, Y.Author
Lim, H.Author
Year1997 (June)Volume81
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.365334Search in ResearchGate
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Mindat Ref. ID5084022Long-form Identifiermindat:1:5:5084022:1
GUID0
Full ReferenceCho, Yong-Hoon, Choe, Byung-Doo, Kim, Y., Lim, H. (1997) Interface states in In0.5Ga0.5P/AlxGa1−xAs heterostructures grown by liquid phase epitaxy. Journal of Applied Physics, 81 (11). 7362-7366 doi:10.1063/1.365334
Plain TextCho, Yong-Hoon, Choe, Byung-Doo, Kim, Y., Lim, H. (1997) Interface states in In0.5Ga0.5P/AlxGa1−xAs heterostructures grown by liquid phase epitaxy. Journal of Applied Physics, 81 (11). 7362-7366 doi:10.1063/1.365334
In(1997, June) Journal of Applied Physics Vol. 81 (11) AIP Publishing

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Cho, Yong-Hoon, Song, J. J., Lim, H., Choe, Byung-Doo, Lee, J. I., Kim, D. (1998) Recombination dynamics in n-AlxGa1−xAs/n-In0.5Ga0.5P type-II heterostructures. Applied Physics Letters, 73 (9). 1245-1247 doi:10.1063/1.122369
Kim, Il‐Jong, Cho, Yong‐Hoon, Kim, Kwan‐Shik, Choe, Byung‐Doo, Lim, H. (1996) Band line‐up transition in AlxGa1−xAs/In0.5Ga0.5P from capacitance‐voltage analysis. Applied Physics Letters, 68 (24). 3488-3490 doi:10.1063/1.115767
Cho, Yong-Hoon, Song, J. J., Lim, H., Choe, Byung-Doo, Lee, J. I., Kim, D. (1998) Erratum: “Recombination dynamics in n-AlxGa1−xAs/n-In0.5Ga0.5P type-II heterostructures” [Appl. Phys. Lett. 73, 1245 (1998)]. Applied Physics Letters, 73 (15). 2219 doi:10.1063/1.122431
Lee, Jong Boong, Kwon, Sang Deok, Kim, In, Cho, Yong Hoon, Choe, Byung‐Doo (1992) The characteristics of an In0.5Ga0.5P and In0.5Ga0.5P/GaAs heterojunction grown on a (100) GaAs substrate by liquid‐phase epitaxy. Journal of Applied Physics, 71 (10). 5016-5021 doi:10.1063/1.350602
Kim, Kwan‐Shik, Cho, Yong‐Hoon, Choe, Byung‐Doo, Jeong, Weon Guk, Lim, H. (1995) Determination of Al mole fraction for null conduction band offset in In0.5Ga0.5P/AlxGa1−xAs heterojunction by photoluminescence measurement. Applied Physics Letters, 67 (12). 1718-1720 doi:10.1063/1.115027
Kwon, Ho Ki, Kwon, S. D., Choe, Byung‐Doo, Lim, H. (1995) Effects of donor doping on deep traps in In0.5Ga0.5P grown by liquid phase epitaxy. Journal of Applied Physics, 78 (12). 7395-7397 doi:10.1063/1.360390
Lee, Jong Boong, Kim, In, Kwon, Ho Ki, Choe, Byung‐Doo (1993) Amphoteric behavior of germanium in In0.5Ga0.5P grown by liquid phase epitaxy. Applied Physics Letters, 62 (14). 1620-1622 doi:10.1063/1.108605
Kim, Kwan‐Shik, Lee, Jong Boong, Choe, Byung‐Doo, Jeong, Weon Guk, Lim, H. (1994) Photoluminescence of a staggered In0.5Ga0.5P/AlxGa1−xAs heterojunction. Applied Physics Letters, 65 (4). 451-453 doi:10.1063/1.112330
Kwon, Ho Ki, Kwon, S. D., Kim, In, Lee, Jong Boong, Choe, Byung‐Doo, Lim, H. (1995) Effect of oxygen on the electrical and optical properties of In0.5Ga0.5P grown by liquid‐phase epitaxy. Journal of Applied Physics, 77 (2). 512-516 doi:10.1063/1.359033
Lee, Jong Boong, Kim, Kwan‐Shik, Choe, Byung‐Doo (1993) Observation of staggered band lineup in In0.5Ga0.5P/Al0.43Ga0.57As heterojunction grown by liquid phase epitaxy. Applied Physics Letters, 62 (21). 2688-2690 doi:10.1063/1.109258
Cho, Yong‐Hoon, Kim, Kwan‐Shik, Ryu, Sang‐Wan, Kim, Sang‐Ku, Choe, Byung‐Doo, Lim, H. (1995) Determination of the conduction‐band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis. Applied Physics Letters, 66 (14). 1785-1787 doi:10.1063/1.113321
 
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