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Kim, Kwan‐Shik, Lee, Jong Boong, Choe, Byung‐Doo, Jeong, Weon Guk, Lim, H. (1994) Photoluminescence of a staggered In0.5Ga0.5P/AlxGa1−xAs heterojunction. Applied Physics Letters, 65 (4). 451-453 doi:10.1063/1.112330

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence of a staggered In0.5Ga0.5P/AlxGa1−xAs heterojunction
JournalApplied Physics Letters
AuthorsKim, Kwan‐ShikAuthor
Lee, Jong BoongAuthor
Choe, Byung‐DooAuthor
Jeong, Weon GukAuthor
Lim, H.Author
Year1994 (July 25)Volume65
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.112330Search in ResearchGate
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Mindat Ref. ID8511045Long-form Identifiermindat:1:5:8511045:0
GUID0
Full ReferenceKim, Kwan‐Shik, Lee, Jong Boong, Choe, Byung‐Doo, Jeong, Weon Guk, Lim, H. (1994) Photoluminescence of a staggered In0.5Ga0.5P/AlxGa1−xAs heterojunction. Applied Physics Letters, 65 (4). 451-453 doi:10.1063/1.112330
Plain TextKim, Kwan‐Shik, Lee, Jong Boong, Choe, Byung‐Doo, Jeong, Weon Guk, Lim, H. (1994) Photoluminescence of a staggered In0.5Ga0.5P/AlxGa1−xAs heterojunction. Applied Physics Letters, 65 (4). 451-453 doi:10.1063/1.112330
In(1994, July) Applied Physics Letters Vol. 65 (4) AIP Publishing

See Also

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Kim, Kwan‐Shik, Cho, Yong‐Hoon, Choe, Byung‐Doo, Jeong, Weon Guk, Lim, H. (1995) Determination of Al mole fraction for null conduction band offset in In0.5Ga0.5P/AlxGa1−xAs heterojunction by photoluminescence measurement. Applied Physics Letters, 67 (12). 1718-1720 doi:10.1063/1.115027
Lee, Jong Boong, Kim, Kwan‐Shik, Choe, Byung‐Doo (1993) Observation of staggered band lineup in In0.5Ga0.5P/Al0.43Ga0.57As heterojunction grown by liquid phase epitaxy. Applied Physics Letters, 62 (21). 2688-2690 doi:10.1063/1.109258
Kim, Il‐Jong, Cho, Yong‐Hoon, Kim, Kwan‐Shik, Choe, Byung‐Doo, Lim, H. (1996) Band line‐up transition in AlxGa1−xAs/In0.5Ga0.5P from capacitance‐voltage analysis. Applied Physics Letters, 68 (24). 3488-3490 doi:10.1063/1.115767
Cho, Yong-Hoon, Song, J. J., Lim, H., Choe, Byung-Doo, Lee, J. I., Kim, D. (1998) Recombination dynamics in n-AlxGa1−xAs/n-In0.5Ga0.5P type-II heterostructures. Applied Physics Letters, 73 (9). 1245-1247 doi:10.1063/1.122369
Lee, Jong Boong, Kwon, Sang Deok, Kim, In, Cho, Yong Hoon, Choe, Byung‐Doo (1992) The characteristics of an In0.5Ga0.5P and In0.5Ga0.5P/GaAs heterojunction grown on a (100) GaAs substrate by liquid‐phase epitaxy. Journal of Applied Physics, 71 (10). 5016-5021 doi:10.1063/1.350602
Lee, Jong Boong, Kim, In, Kwon, Ho Ki, Choe, Byung‐Doo (1993) Amphoteric behavior of germanium in In0.5Ga0.5P grown by liquid phase epitaxy. Applied Physics Letters, 62 (14). 1620-1622 doi:10.1063/1.108605
Cho, Yong-Hoon, Choe, Byung-Doo, Kim, Y., Lim, H. (1997) Interface states in In0.5Ga0.5P/AlxGa1−xAs heterostructures grown by liquid phase epitaxy. Journal of Applied Physics, 81 (11). 7362-7366 doi:10.1063/1.365334
Cho, Yong-Hoon, Song, J. J., Lim, H., Choe, Byung-Doo, Lee, J. I., Kim, D. (1998) Erratum: “Recombination dynamics in n-AlxGa1−xAs/n-In0.5Ga0.5P type-II heterostructures” [Appl. Phys. Lett. 73, 1245 (1998)]. Applied Physics Letters, 73 (15). 2219 doi:10.1063/1.122431
Cho, Yong‐Hoon, Kim, Kwan‐Shik, Ryu, Sang‐Wan, Kim, Sang‐Ku, Choe, Byung‐Doo, Lim, H. (1995) Determination of the conduction‐band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis. Applied Physics Letters, 66 (14). 1785-1787 doi:10.1063/1.113321
Kwon, Ho Ki, Kwon, S. D., Kim, In, Lee, Jong Boong, Choe, Byung‐Doo, Lim, H. (1995) Effect of oxygen on the electrical and optical properties of In0.5Ga0.5P grown by liquid‐phase epitaxy. Journal of Applied Physics, 77 (2). 512-516 doi:10.1063/1.359033
Lee, Jeong‐Seok, Kim, In, Choe, Byung‐Doo, Jeong, Weon Guk (1994) Carbon doping and growth rate reduction by CCl4during metalorganic chemical‐vapor deposition of GaAs. Journal of Applied Physics, 76 (9). 5079-5084 doi:10.1063/1.357219
 
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