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Mamutin, V. V., Vekshin, V. A., Davydov, V. Yu., Ratnikov, V. V., Shubina, T. V., Ivanov, S. V., Kopev, P. S., Karlsteen, M., Söderwall, U., Willander, M. (1999) MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages. physica status solidi (a), 176 (1). 247-252 doi:10.1002/(sici)1521-396x(199911)176:1<247::aid-pssa247>3.0.co;2-i

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Reference TypeJournal (article/letter/editorial)
TitleMBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages
Journalphysica status solidi (a)
AuthorsMamutin, V. V.Author
Vekshin, V. A.Author
Davydov, V. Yu.Author
Ratnikov, V. V.Author
Shubina, T. V.Author
Ivanov, S. V.Author
Kopev, P. S.Author
Karlsteen, M.Author
Söderwall, U.Author
Willander, M.Author
Year1999 (November)Volume176
Issue1
PublisherWiley
DOIdoi:10.1002/(sici)1521-396x(199911)176:1<247::aid-pssa247>3.0.co;2-iSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID5084772Long-form Identifiermindat:1:5:5084772:9
GUID0
Full ReferenceMamutin, V. V., Vekshin, V. A., Davydov, V. Yu., Ratnikov, V. V., Shubina, T. V., Ivanov, S. V., Kopev, P. S., Karlsteen, M., Söderwall, U., Willander, M. (1999) MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages. physica status solidi (a), 176 (1). 247-252 doi:10.1002/(sici)1521-396x(199911)176:1<247::aid-pssa247>3.0.co;2-i
Plain TextMamutin, V. V., Vekshin, V. A., Davydov, V. Yu., Ratnikov, V. V., Shubina, T. V., Ivanov, S. V., Kopev, P. S., Karlsteen, M., Söderwall, U., Willander, M. (1999) MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages. physica status solidi (a), 176 (1). 247-252 doi:10.1002/(sici)1521-396x(199911)176:13.0.co;2-i
In(1999, November) physica status solidi (a) Vol. 176 (1) Wiley

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Mamutin, V. V., Vekshin, V. A., Davydov, V. Yu., Ratnikov, V. V., Kudriavtsev, Yu. A., Ber, B. Ya., Emtsev, V. V., Ivanov, S. V. (1999) Mg-Doped Hexagonal InN/Al2O3 Films Grown by MBE. physica status solidi (a), 176 (1). 373-378 doi:10.1002/(sici)1521-396x(199911)176:1<373::aid-pssa373>3.0.co;2-i
Lundin, W. V., Usikov, A. S., Sakharov, A. V., Tretyakov, V. V., Poloskin, D. V., Ledentsov, N. N., Hoffmann, A. (1999) Growth and Characterization of Thick Si-Doped AlGaN Epilayers on Sapphire Substrates. physica status solidi (a), 176 (1). 379-384 doi:10.1002/(sici)1521-396x(199911)176:1<379::aid-pssa379>3.0.co;2-v
Araki, T., Minami, T., Nanishi, Y. (1999) Microstructures of Cubic and Hexagonal GaN Grown on (0001) Sapphire by ECR-MBE with Various Electric Biases. physica status solidi (a), 176 (1). 487-491 doi:10.1002/(sici)1521-396x(199911)176:1<487::aid-pssa487>3.0.co;2-v
Shubina, T.V., Mamutin, V.V., Vekshin, V.A., Ratnikov, V.V., Toropov, A.A., Sitnikova, A.A., Ivanov, S.V., Karlsteen, M., Södervall, U., Willander, M., Pozina, G., Bergman, J.P., Monemar, B. (1999) Optical Properties of an AlInN Interface Layer Spontaneously Formed in Hexagonal InN/Sapphire Heterostructures. physica status solidi (b), 216 (1). 205-209 doi:10.1002/(sici)1521-3951(199911)216:1<205::aid-pssb205>3.0.co;2-7
Bondar, V., Kucharsky, I., Simkiv, B., Akselrud, L., Davydov, V., Dubov, Yu., Popovich, S. (1999) Low-Temperature Synthesis of Gallium Nitride Thin Films Using Reactive Rf-Magnetron Sputtering. physica status solidi (a), 176 (1). 329-332 doi:10.1002/(sici)1521-396x(199911)176:1<329::aid-pssa329>3.0.co;2-e
Albrecht, M., Nikitina, I. P., Nikolaev, A. E., Melnik, Yu. V., Dmitriev, V. A., Strunk, H. P. (1999) Dislocation Reduction in AlN and GaN Bulk Crystals Grown by HVPE. physica status solidi (a), 176 (1). 453-458 doi:10.1002/(sici)1521-396x(199911)176:1<453::aid-pssa453>3.0.co;2-m
Yamamoto, A., Adachi, M., Arita, T., Sugiura, T., Hashimoto, A. (1999) A Comparative Study of MOVPE Growth of InN on GaAs(111) Substrates Using a Nitrided or Grown GaN Buffer Layer. physica status solidi (a), 176 (1). 595-598 doi:10.1002/(sici)1521-396x(199911)176:1<595::aid-pssa595>3.0.co;2-v
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Bondar, V. (1999) Properties of Nanocrystalline Gallium Nitride Thin Films Grown on Monocrystalline Substrates and Buffer Layers. physica status solidi (a), 176 (1). 635-638 doi:10.1002/(sici)1521-396x(199911)176:1<635::aid-pssa635>3.0.co;2-e
 
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