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Kita, K., Ihara, M., Sakaki, K., Yamada, K. (1997) Estimation of the interface states density of a Si/C60 heterojunction by frequency-dependent capacitance–voltage characteristics. Journal of Applied Physics, 81 (9). 6246-6251 doi:10.1063/1.364438

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Reference TypeJournal (article/letter/editorial)
TitleEstimation of the interface states density of a Si/C60 heterojunction by frequency-dependent capacitance–voltage characteristics
JournalJournal of Applied Physics
AuthorsKita, K.Author
Ihara, M.Author
Sakaki, K.Author
Yamada, K.Author
Year1997 (May)Volume81
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.364438Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5087029Long-form Identifiermindat:1:5:5087029:5
GUID0
Full ReferenceKita, K., Ihara, M., Sakaki, K., Yamada, K. (1997) Estimation of the interface states density of a Si/C60 heterojunction by frequency-dependent capacitance–voltage characteristics. Journal of Applied Physics, 81 (9). 6246-6251 doi:10.1063/1.364438
Plain TextKita, K., Ihara, M., Sakaki, K., Yamada, K. (1997) Estimation of the interface states density of a Si/C60 heterojunction by frequency-dependent capacitance–voltage characteristics. Journal of Applied Physics, 81 (9). 6246-6251 doi:10.1063/1.364438
In(1997, May) Journal of Applied Physics Vol. 81 (9) AIP Publishing

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