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Wong, K. M., Chim, W. K., Ang, K. W., Yeo, Y. C. (2007) Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements. Applied Physics Letters, 90 (15). 153507pp. doi:10.1063/1.2721868

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Reference TypeJournal (article/letter/editorial)
TitleSpatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements
JournalApplied Physics Letters
AuthorsWong, K. M.Author
Chim, W. K.Author
Ang, K. W.Author
Yeo, Y. C.Author
Year2007 (April 9)Volume90
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.2721868Search in ResearchGate
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Mindat Ref. ID8553399Long-form Identifiermindat:1:5:8553399:8
GUID0
Full ReferenceWong, K. M., Chim, W. K., Ang, K. W., Yeo, Y. C. (2007) Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements. Applied Physics Letters, 90 (15). 153507pp. doi:10.1063/1.2721868
Plain TextWong, K. M., Chim, W. K., Ang, K. W., Yeo, Y. C. (2007) Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements. Applied Physics Letters, 90 (15). 153507pp. doi:10.1063/1.2721868
In(2007, April) Applied Physics Letters Vol. 90 (15) AIP Publishing

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Wong, K. M., Chim, W. K. (2006) Theoretical model of interface trap density using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements. Applied Physics Letters, 88 (8). 83510pp. doi:10.1063/1.2177352
Wong, K. M., Chim, W. K. (2007) Deep-depletion physics-based analytical model for scanning capacitance microscopy carrier profile extraction. Applied Physics Letters, 91 (1). 13510pp. doi:10.1063/1.2753827
Chim, W. K., Wong, K. M., Teo, Y. L., Lei, Y., Yeow, Y. T. (2002) Dopant extraction from scanning capacitance microscopy measurements of p-n junctions using combined inverse modeling and forward simulation. Applied Physics Letters, 80 (25). 4837-4839 doi:10.1063/1.1487899
Wong, K. M., Chim, W. K., Huang, J. Q., Zhu, L. (2008) Scanning capacitance microscopy detection of charge trapping in free-standing germanium nanodots and the passivation of hole trap sites. Journal of Applied Physics, 103 (5). 54505pp. doi:10.1063/1.2875776
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Kang, C. J., Buh, G. H., Lee, S., Kim, C. K., Mang, K. M., Im, C., Kuk, Y. (1999) Charge trap dynamics in a SiO2 layer on Si by scanning capacitance microscopy. Applied Physics Letters, 74 (13). 1815-1817 doi:10.1063/1.123095
Chandra, W., Ang, L. K., Pey, K. L., Ng, C. M. (2007) Two-dimensional analytical Mott-Gurney law for a trap-filled solid. Applied Physics Letters, 90 (15). 153505pp. doi:10.1063/1.2721382
Kasu, M., Ueda, K., Yamauchi, Y., Makimoto, T. (2007) Gate capacitance-voltage characteristics of submicron-long-gate diamond field-effect transistors with hydrogen surface termination. Applied Physics Letters, 90 (4). 43509pp. doi:10.1063/1.2436649
Kang, C. J., Kim, C. K., Lera, J. D., Kuk, Y., Mang, K. M., Lee, J. G., Suh, K. S., Williams, C. C. (1997) Depth dependent carrier density profile by scanning capacitance microscopy. Applied Physics Letters, 71 (11). 1546-1548 doi:10.1063/1.119961
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