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Chim, W. K., Wong, K. M., Teo, Y. L., Lei, Y., Yeow, Y. T. (2002) Dopant extraction from scanning capacitance microscopy measurements of p-n junctions using combined inverse modeling and forward simulation. Applied Physics Letters, 80 (25). 4837-4839 doi:10.1063/1.1487899

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Reference TypeJournal (article/letter/editorial)
TitleDopant extraction from scanning capacitance microscopy measurements of p-n junctions using combined inverse modeling and forward simulation
JournalApplied Physics Letters
AuthorsChim, W. K.Author
Wong, K. M.Author
Teo, Y. L.Author
Lei, Y.Author
Yeow, Y. T.Author
Year2002 (June 24)Volume80
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.1487899Search in ResearchGate
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Mindat Ref. ID8532351Long-form Identifiermindat:1:5:8532351:3
GUID0
Full ReferenceChim, W. K., Wong, K. M., Teo, Y. L., Lei, Y., Yeow, Y. T. (2002) Dopant extraction from scanning capacitance microscopy measurements of p-n junctions using combined inverse modeling and forward simulation. Applied Physics Letters, 80 (25). 4837-4839 doi:10.1063/1.1487899
Plain TextChim, W. K., Wong, K. M., Teo, Y. L., Lei, Y., Yeow, Y. T. (2002) Dopant extraction from scanning capacitance microscopy measurements of p-n junctions using combined inverse modeling and forward simulation. Applied Physics Letters, 80 (25). 4837-4839 doi:10.1063/1.1487899
In(2002, June) Applied Physics Letters Vol. 80 (25) AIP Publishing

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Wong, K. M., Chim, W. K. (2006) Theoretical model of interface trap density using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements. Applied Physics Letters, 88 (8). 83510pp. doi:10.1063/1.2177352
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Wong, K. M., Chim, W. K., Huang, J. Q., Zhu, L. (2008) Scanning capacitance microscopy detection of charge trapping in free-standing germanium nanodots and the passivation of hole trap sites. Journal of Applied Physics, 103 (5). 54505pp. doi:10.1063/1.2875776
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