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Kang, S. H., Morris, J. W. (1997) Microstructural evolution of Al-Cu thin-film conducting lines during post-pattern annealing. Journal of Applied Physics, 82 (1). 196-200 doi:10.1063/1.365760

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Reference TypeJournal (article/letter/editorial)
TitleMicrostructural evolution of Al-Cu thin-film conducting lines during post-pattern annealing
JournalJournal of Applied Physics
AuthorsKang, S. H.Author
Morris, J. W.Author
Year1997 (July)Volume82
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.365760Search in ResearchGate
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Mindat Ref. ID5087071Long-form Identifiermindat:1:5:5087071:8
GUID0
Full ReferenceKang, S. H., Morris, J. W. (1997) Microstructural evolution of Al-Cu thin-film conducting lines during post-pattern annealing. Journal of Applied Physics, 82 (1). 196-200 doi:10.1063/1.365760
Plain TextKang, S. H., Morris, J. W. (1997) Microstructural evolution of Al-Cu thin-film conducting lines during post-pattern annealing. Journal of Applied Physics, 82 (1). 196-200 doi:10.1063/1.365760
In(1997, July) Journal of Applied Physics Vol. 82 (1) AIP Publishing

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Kang, S. H., Kim, C., Morris, J. W., GĆ©nin, F. Y. (1996) Effect of postā€pattern annealing on the grain structure and reliability of Alā€based interconnects. Journal of Applied Physics, 79 (11). 8330-8335 doi:10.1063/1.362545
Han, J. H., Shin, M. C., Kang, S. H., Morris, J. W. (1998) Effects of precipitate distribution on electromigration in Alā€“Cu thin-film interconnects. Applied Physics Letters, 73 (6). 762-764 doi:10.1063/1.121993
Kim, Choong-Un, Morris, J. W., Lee, Hyuck-Mo (1997) Kinetics of electromigration-induced edge drift in Alā€“Cu thin-film interconnects. Journal of Applied Physics, 82 (4). 1592-1598 doi:10.1063/1.365948
Kim, Choongun, Selitser, S. I., Morris, J. W. (1994) Influence of microstructure on the resistivity of Alā€Cuā€Si thinā€film interconnects. Journal of Applied Physics, 75 (2). 879-884 doi:10.1063/1.356442
Su, C. M., Bohn, H. G., Robrock, K.ā€H., Schilling, W. (1991) Chemical, microstructural, and internal friction characterization of Al/Cu thinā€film reactions. Journal of Applied Physics, 70 (4). 2086-2093 doi:10.1063/1.349444
Bergstrom, D. B., Petrov, I., Allen, L. H., Greene, J. E. (1997) Aluminide formation in polycrystalline Al/W metal/barrier thin-film bilayers: Reaction paths and kinetics. Journal of Applied Physics, 82 (1). 201-209 doi:10.1063/1.365798
Jawarani, D., Kawasaki, H., Yeo, I.-S., Rabenberg, L., Stark, J. P., Ho, P. S. (1997) In situtransmission electron microscopy study of plastic deformation in passivated Alā€“Cu thin films. Journal of Applied Physics, 82 (1). 171-181 doi:10.1063/1.365584
Kang, H. S., Lee, J. W., Kim, M. K., Joo, J., Ko, J. M., Lee, J. Y. (2006) Electrical characteristics of pentacene-based thin film transistor with conducting poly(3,4-ethylenedioxythiophene) electrodes. Journal of Applied Physics, 100 (6). 64508pp. doi:10.1063/1.2349553
Zhao, H. W., Lu, M., Du, J., Zhai, H. R. (1997) Observation of the evolution of anisotropic magnetoresistance in thin magnetic films. Journal of Applied Physics, 82 (1). 485-487 doi:10.1063/1.365843
Zhang, H., Cargill, G. S., Ge, Y., Maniatty, A. M., Liu, W. (2008) Strain evolution in Al conductor lines during electromigration. Journal of Applied Physics, 104 (12). 123533pp. doi:10.1063/1.3041152
Kim, Choongun, Morris, J. W. (1993) The mechanism of electromigration failure of narrow Alā€2Cuā€1Si thinā€film interconnects. Journal of Applied Physics, 73 (10). 4885-4893 doi:10.1063/1.353806
 
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