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Kim, Choong-Un, Morris, J. W., Lee, Hyuck-Mo (1997) Kinetics of electromigration-induced edge drift in Al–Cu thin-film interconnects. Journal of Applied Physics, 82 (4). 1592-1598 doi:10.1063/1.365948

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Reference TypeJournal (article/letter/editorial)
TitleKinetics of electromigration-induced edge drift in Al–Cu thin-film interconnects
JournalJournal of Applied Physics
AuthorsKim, Choong-UnAuthor
Morris, J. W.Author
Lee, Hyuck-MoAuthor
Year1997 (August 15)Volume82
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.365948Search in ResearchGate
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Mindat Ref. ID5088082Long-form Identifiermindat:1:5:5088082:1
GUID0
Full ReferenceKim, Choong-Un, Morris, J. W., Lee, Hyuck-Mo (1997) Kinetics of electromigration-induced edge drift in Al–Cu thin-film interconnects. Journal of Applied Physics, 82 (4). 1592-1598 doi:10.1063/1.365948
Plain TextKim, Choong-Un, Morris, J. W., Lee, Hyuck-Mo (1997) Kinetics of electromigration-induced edge drift in Al–Cu thin-film interconnects. Journal of Applied Physics, 82 (4). 1592-1598 doi:10.1063/1.365948
In(1997, August) Journal of Applied Physics Vol. 82 (4) AIP Publishing

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Kim, Choongun, Morris, J. W. (1993) The mechanism of electromigration failure of narrow Al‐2Cu‐1Si thin‐film interconnects. Journal of Applied Physics, 73 (10). 4885-4893 doi:10.1063/1.353806
Han, J. H., Shin, M. C., Kang, S. H., Morris, J. W. (1998) Effects of precipitate distribution on electromigration in Al–Cu thin-film interconnects. Applied Physics Letters, 73 (6). 762-764 doi:10.1063/1.121993
Michael, Nancy L., Kim, Choong-Un (2001) Electromigration in Cu thin films with Sn and Al cross strips. Journal of Applied Physics, 90 (9). 4370-4376 doi:10.1063/1.1406964
Kim, Choongun, Selitser, S. I., Morris, J. W. (1994) Influence of microstructure on the resistivity of Al‐Cu‐Si thin‐film interconnects. Journal of Applied Physics, 75 (2). 879-884 doi:10.1063/1.356442
Proost, Joris, Witvrouw, Ann, Maex, Karen, D’Haen, Jan, Cosemans, Patrick (2000) Electromigration-induced drift in damascene and plasma-etched Al(Cu). I. Kinetics of Cu depletion in polycrystalline interconnects. Journal of Applied Physics, 87 (1). 86-98 doi:10.1063/1.371830
Sanchez, John E., Kraft, Oliver, Arzt, Eduard (1992) Electromigration induced transgranular slit failures in near bamboo Al and Al‐2% Cu thin‐film interconnects. Applied Physics Letters, 61 (26). 3121-3123 doi:10.1063/1.107980
Kang, S. H., Morris, J. W. (1997) Microstructural evolution of Al-Cu thin-film conducting lines during post-pattern annealing. Journal of Applied Physics, 82 (1). 196-200 doi:10.1063/1.365760
Chen, L. S., Bang, W. H., Park, Young-Joon, Ryan, E. Todd, King, Sean, Kim, Choong-Un (2010) Observation of space charge limited current by Cu ion drift in porous low-k/Cu interconnects. Applied Physics Letters, 96 (9). 91903pp. doi:10.1063/1.3337102
Kim, Choongun, Morris, J. W. (1992) The influence of Cu precipitation on electromigration failure in Al‐Cu‐Si. Journal of Applied Physics, 72 (5). 1837-1845 doi:10.1063/1.351655
Proost, Joris, Maex, Karen, Delacy, Luc (2000) Electromigration-induced drift in damascene and plasma-etched Al(Cu). II. Mass transport mechanisms in bamboo interconnects. Journal of Applied Physics, 87 (1). 99-109 doi:10.1063/1.372389
Shih, W. C., Greer, A. L. (1998) Electromigration damage and failure distributions in Al-4 wt % Cu interconnects. Journal of Applied Physics, 84 (5). 2551-2557 doi:10.1063/1.368417
 
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