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(1997, August) Journal of Applied Physics Vol. 82 (4) AIP Publishing

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Reference TypeJournal (issue)
JournalJournal of Applied Physics
Year1997 (August)Volume82
Issue<   4   >
PublisherAIP Publishing
Mindat Ref. ID5088072Long-form Identifiermindat:1:5:5088072:4
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Full Reference(1997, August) Journal of Applied Physics Vol. 82 (4) AIP Publishing
Plain Text(1997, August) Journal of Applied Physics Vol. 82 (4) AIP Publishing
In(1997) Journal of Applied Physics Vol. 82. AIP Publishing

Contains

Tringides, Michael C., Larsson, Mats I., PfnĂźr, Herbert, Frischat, Hannes, Budde, Knut, Henzler, Martin (1997) Are equilibrium fluctuations detectable in diffracted intensities?. Journal of Applied Physics, 82 (4). 1507-1510 doi:10.1063/1.365950
Crow, James T. (1997) Unipolar-current dipoles and other optimum reduced-symmetry multipoles. Journal of Applied Physics, 82 (4). 1511-1517 doi:10.1063/1.365949
Ohtoshi, T., Niwa, A., Kuroda, T. (1997) Dependence of optical gain on crystal orientation in wurtzite–GaN strained quantum-well lasers. Journal of Applied Physics, 82 (4). 1518-1520 doi:10.1063/1.365951
Nordman, Nina, Nordman, Olli (1997) Characterization of refractive index change induced by electron irradiation in amorphous thin As2S3 films. Journal of Applied Physics, 82 (4). 1521-1524 doi:10.1063/1.365952
Paltauf, G., Schmidt-Kloiber, H. (1997) Measurement of laser-induced acoustic waves with a calibrated optical transducer. Journal of Applied Physics, 82 (4). 1525-1531 doi:10.1063/1.365953
Enguehard, Franck, Bertrand, Lionel (1997) Effects of optical penetration and laser pulse duration on laser generated longitudinal acoustic waves. Journal of Applied Physics, 82 (4). 1532-1538 doi:10.1063/1.365954
Roychowdhury, P., Vijayan, T., Iyengar, S. T. (1997) Spatial and temporal characteristics of a vacuum-arc rail-gun plasma. Journal of Applied Physics, 82 (4). 1539-1545 doi:10.1063/1.366275
Jelenković, B. M., Gallagher, Alan (1997) Particle accumulation in a flowing silane discharge. Journal of Applied Physics, 82 (4). 1546-1553 doi:10.1063/1.365955
Daymond, M. R., Bourke, M. A. M., Von Dreele, R. B., Clausen, B., Lorentzen, T. (1997) Use of Rietveld refinement for elastic macrostrain determination and for evaluation of plastic strain history from diffraction spectra. Journal of Applied Physics, 82 (4). 1554-1562 doi:10.1063/1.365956
Jawarani, D., Kawasaki, H., Yeo, I.-S., Rabenberg, L., Stark, J. P., Ho, P. S. (1997) In situtransmission electron microscopy study of plastic deformation and stress-induced voiding in Al–Cu interconnects. Journal of Applied Physics, 82 (4). 1563-1577 doi:10.1063/1.365957
Shen, Y.-L. (1997) Modeling of thermal stresses in metal interconnects: Effects of line aspect ratio. Journal of Applied Physics, 82 (4). 1578-1581 doi:10.1063/1.365944
Anastassakis, E. (1997) Selection rules of Raman scattering by optical phonons in strained cubic crystals. Journal of Applied Physics, 82 (4). 1582-1591 doi:10.1063/1.365958
Kim, Choong-Un, Morris, J. W., Lee, Hyuck-Mo (1997) Kinetics of electromigration-induced edge drift in Al–Cu thin-film interconnects. Journal of Applied Physics, 82 (4). 1592-1598 doi:10.1063/1.365948
Nakashima, Kiichi, Sugiura, Hideo (1997) Structural evaluation of InAsP/InGaAsP strained-layer superlattices with dislocations as grown by metal-organic molecular beam epitaxy. Journal of Applied Physics, 82 (4). 1599-1607 doi:10.1063/1.365959
Rha, J. J., Park, J. K. (1997) Stability of the grain configurations of thin films—A model for agglomeration. Journal of Applied Physics, 82 (4). 1608-1616 doi:10.1063/1.365960
Mirkarimi, P. B., Medlin, D. L., McCarty, K. F., Dibble, D. C., Clift, W. M., Knapp, J. A., Barbour, J. C. (1997) The synthesis, characterization, and mechanical properties of thick, ultrahard cubic boron nitride films deposited by ion-assisted sputtering. Journal of Applied Physics, 82 (4). 1617-1625 doi:10.1063/1.365961
Caragianis-Broadbridge, C., Blaser, J. M., Paine, D. C. (1997) A cross-sectional atomic force microscopy study of nanocrystalline Ge precipitates in SiO2 formed from metastable Si1−xGexO2. Journal of Applied Physics, 82 (4). 1626-1631 doi:10.1063/1.365962
Masson, D. P., Lockwood, D. J., Graham, M. J. (1997) Thermal oxide on CdSe. Journal of Applied Physics, 82 (4). 1632-1639 doi:10.1063/1.366263
Ogawa, Koji, Noro, Sumiko, Maki, Kunisuke (1997) Charge transfer from Cu in YBa2Cu3O7−δ and Ba2Cu3O4Cl2 crystals determined by Auger electron spectroscopy. Journal of Applied Physics, 82 (4). 1640-1648 doi:10.1063/1.366262
Bhapkar, Udayan V., Shur, Michael S. (1997) Monte Carlo calculation of velocity-field characteristics of wurtzite GaN. Journal of Applied Physics, 82 (4). 1649-1655 doi:10.1063/1.365963
Khirouni, K., Bourgoin, J. C. (1997) Free-electron transport in semi-insulating GaAs. Journal of Applied Physics, 82 (4). 1656-1660 doi:10.1063/1.365964
Hirota, Y., Maeda, F., Watanabe, Y., Ogino, T. (1997) Shift of surface Fermi level position toward the conduction band minimum by crystal defects near GaAs(001) surface. Journal of Applied Physics, 82 (4). 1661-1666 doi:10.1063/1.365965
Gotoh, Hideki, Ando, Hiroaki (1997) Excitonic quantum confinement effects and exciton electroabsorption in semiconductor thin quantum boxes. Journal of Applied Physics, 82 (4). 1667-1677 doi:10.1063/1.365966
Thean, V. Y., Nagaraja, S., Leburton, J. P. (1997) Three-dimensional self-consistent simulation of interface and dopant disorders in delta-doped grid-gate quantum-dot devices. Journal of Applied Physics, 82 (4). 1678-1686 doi:10.1063/1.365967
McNary, A. Jason, Puri, Ashok (1997) Intrinsic chaos in a dc field biased quantum heterostructure. Journal of Applied Physics, 82 (4). 1687-1695 doi:10.1063/1.365968
Goubert, L., Van Meirhaeghe, R. L., Clauws, P., Cardon, F., Van Daele, P. (1997) A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching. Journal of Applied Physics, 82 (4). 1696-1699 doi:10.1063/1.365969
Souza, P. L., Yavich, B., Pamplona-Pires, M., Henriques, A. B., Gonçalves, L. C. D. (1997) Electronic and optical properties of periodically Si δ-doped InP grown by low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 82 (4). 1700-1705 doi:10.1063/1.365946
Reklaitis, A., Stasch, R., Asche, M., Hey, R., Krotkus, A., SchĂśll, E. (1997) Dynamics of the single barrier heterostructure hot electron diode. Journal of Applied Physics, 82 (4). 1706-1710 doi:10.1063/1.365970
McGarvey, B., Curran, J. E., Ford, R. A., French, I. D., Gale, I. G., Hewett, J., Sandoe, J. N. (1997) Control of stability and current-voltage characteristics in amorphous hydrogenated silicon nitride thin film diodes. Journal of Applied Physics, 82 (4). 1711-1715 doi:10.1063/1.365971
Lyakas, M., Beregovsky, M., Eizenberg, M., Meyer, F. (1997) Electrical properties of the Ti(SiGe)2/Si0.89Ge0.11/Si(001) contact system. Journal of Applied Physics, 82 (4). 1716-1722 doi:10.1063/1.365972
Jones, K. A., Cole, M. W., Han, W. Y., Eckart, D. W., Hilton, K. P., Crouch, M. A., Hughes, B. H. (1997) Comparison of PdGeTiPt and NiGeAu ohmic contacts to n-GaAs and PdGeTiPt and TiPd contacts to p+-GaAs. Journal of Applied Physics, 82 (4). 1723-1729 doi:10.1063/1.365973
Mondio, G., Neri, F., Allegrini, M., Iembo, A., Fuso, F. (1997) Energy loss spectroscopy of RuO2 thin films. Journal of Applied Physics, 82 (4). 1730-1735 doi:10.1063/1.365974
Andreone, A., Cassinese, A., Di Chiara, A., Iavarone, M., Palomba, F., Ruosi, A., Vaglio, R. (1997) Nonlinear microwave properties of Nb3Sn sputtered superconducting films. Journal of Applied Physics, 82 (4). 1736-1742 doi:10.1063/1.365975
Raasch, D., Mathieu, C. (1997) Wall energy and wall thickness of exchange-coupled rare-earth transition-metal triple layer stacks. Journal of Applied Physics, 82 (4). 1743-1746 doi:10.1063/1.365947
Kopcewicz, M., Grabias, A., Williamson, D. L. (1997) Magnetism and nanostructure of Fe93−x−yZr7BxCuy alloys. Journal of Applied Physics, 82 (4). 1747-1758 doi:10.1063/1.365976
Ragan, D. D., Svedlindh, P., Granqvist, C. G. (1997) Magnetic measurements on electrochromic Ni-oxide-based films. Journal of Applied Physics, 82 (4). 1759-1762 doi:10.1063/1.365977
Yumoto, Seiji (1997) Sputtering power dependence of the magnetic properties of CoCrPt. Journal of Applied Physics, 82 (4). 1763-1775 doi:10.1063/1.365978
Ceulemans, T., Schoemaker, D., Vandenbroucke, D., De Keyzer, R. (1997) Formation and decay kinetics of light-induced dye radicals on spectrally sensitized AgBr microcrystals measured by electron spin resonance spectroscopy: A quantitative model. Journal of Applied Physics, 82 (4). 1776-1783 doi:10.1063/1.365979
Labelle, Catherine B., Limb, Scott J., Gleason, Karen K. (1997) Electron spin resonance of pulsed plasma-enhanced chemical vapor deposited fluorocarbon films. Journal of Applied Physics, 82 (4). 1784-1787 doi:10.1063/1.365980
Damjanovic, Dragan (1997) Stress and frequency dependence of the direct piezoelectric effect in ferroelectric ceramics. Journal of Applied Physics, 82 (4). 1788-1797 doi:10.1063/1.365981
Park, Seung-Eek, Pan, Ming-Jen, Markowski, Kelley, Yoshikawa, Shoko, Cross, L. Eric (1997) Electric field induced phase transition of antiferroelectric lead lanthanum zirconate titanate stannate ceramics. Journal of Applied Physics, 82 (4). 1798-1803 doi:10.1063/1.365982
Park, Seung-Eek, Shrout, Thomas R. (1997) Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals. Journal of Applied Physics, 82 (4). 1804-1811 doi:10.1063/1.365983
Warren, W. L., Vanheusden, K., Tallant, D. R., Seager, C. H., Sun, S.-S., Evans, D. R., Dennis, W. M., Soininen, Erkki, Bullington, J. A. (1997) Atomic level stress and light emission of Ce activated SrS thin films. Journal of Applied Physics, 82 (4). 1812-1814 doi:10.1063/1.366284
Gusev, O. B., Prineas, J. P., Lindmark, E. K., Bresler, M. S., Khitrova, G., Gibbs, H. M., Yassievich, I. N., Zakharchenya, B. P., Masterov, V. F. (1997) Er in molecular beam epitaxy grown GaAs/AlGaAs structures. Journal of Applied Physics, 82 (4). 1815-1823 doi:10.1063/1.365984
Torvik, J. T., Feuerstein, R. J., Qiu, C. H., Pankove, J. I., Namavar, F. (1997) Photoluminescence excitation measurements on erbium implanted GaN. Journal of Applied Physics, 82 (4). 1824-1827 doi:10.1063/1.365985
Bullock, Anthony B., Bolton, Paul R., Mayer, Fred J. (1997) Time-integrated reflectivity of laser-induced back-ablated aluminum thin film targets. Journal of Applied Physics, 82 (4). 1828-1831 doi:10.1063/1.366289
Estes, M. J., Hirsch, L. R., Wichart, S., Moddel, G., Williamson, D. L. (1997) Visible photoluminescence from porous a-Si:H and porous a-Si:C:H thin films. Journal of Applied Physics, 82 (4). 1832-1840 doi:10.1063/1.365986
Edwards, A., Claude, C., Sokolik, I., Chu, T. Y., Okamoto, Y., Dorsinville, R. (1997) Photoluminescence and electroluminescence of new lanthanide-(methyoxybenzoyl)benzoate complexes. Journal of Applied Physics, 82 (4). 1841-1846 doi:10.1063/1.365987
Nambu, Hidetaka, Hamaguchi, Maki, Yoshino, Katsumi (1997) A comparative study of electrogenerated chemiluminescence in poly(3-hexylthiophene) and poly(2-methoxy-5-dodecyloxy-p-phenylenevinylene). Journal of Applied Physics, 82 (4). 1847-1852 doi:10.1063/1.365988
Salnick, A., Mandelis, A., Ruda, H., Jean, C. (1997) Relative sensitivity of photomodulated reflectance and photothermal infrared radiometry to thermal and carrier plasma waves in semiconductors. Journal of Applied Physics, 82 (4). 1853-1859 doi:10.1063/1.365989
Shih, A., Yater, J., Pehrsson, P., Butler, J., Hor, C., Abrams, R. (1997) Secondary electron emission from diamond surfaces. Journal of Applied Physics, 82 (4). 1860-1867 doi:10.1063/1.365990
Doughty, C., Gorbatkin, S. M., Berry, L. A. (1997) Spatial distribution of Cu sputter ejected by very low energy ion bombardment. Journal of Applied Physics, 82 (4). 1868-1875 doi:10.1063/1.365991
Voorma, H.-J., Louis, E., Bijkerk, F., Abdali, S. (1997) Angular and energy dependence of ion bombardment of Mo/Si multilayers. Journal of Applied Physics, 82 (4). 1876-1881 doi:10.1063/1.365992
Marchenko, V. A., Znamenskii, A. G., Helmersson, U. (1997) Plasma characteristics at off-axis high pressure magnetron YBa2Cu3O7−δ sputtering. Journal of Applied Physics, 82 (4). 1882-1889 doi:10.1063/1.365993
Koynov, S., Topf, M., Fischer, S., Meyer, B. K., Radojkovic, P., Hartmann, E., Liliental-Weber, Z. (1997) Structural investigations of GaN grown by low-pressure chemical vapor deposition on 6H–SiC and Al2O3 from GaCl3 and NH3. Journal of Applied Physics, 82 (4). 1890-1895 doi:10.1063/1.365994
Zhang, W. J., Jiang, X., Xia, Y. B. (1997) The selective etching with H+ ions and its effect on the oriented growth of diamond films. Journal of Applied Physics, 82 (4). 1896-1899 doi:10.1063/1.365995
Welter, M. D., Menningen, K. L. (1997) Radical density measurements in an oxyacetylene torch diamond growth flame. Journal of Applied Physics, 82 (4). 1900-1904 doi:10.1063/1.365996
Saß, M., Annen, A., Jacob, W. (1997) Hydrogen bonding in plasma-deposited amorphous hydrogenated boron films. Journal of Applied Physics, 82 (4). 1905-1908 doi:10.1063/1.365997
Molenbroek, Edith C., Mahan, A. H., Gallagher, Alan (1997) Mechanisms influencing “hot-wire” deposition of hydrogenated amorphous silicon. Journal of Applied Physics, 82 (4). 1909-1917 doi:10.1063/1.365998
Yang, B., Brandt, O., Jenichen, B., Mßllhäuser, J., Ploog, K. H. (1997) Cubic (In,Ga)N layers grown on GaAs(001) by dc plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 82 (4). 1918-1920 doi:10.1063/1.365999
Khabashesku, V. N., Margrave, J. L., Waters, K., Schultz, J. A. (1997) Matrix isolation Fourier transform infrared spectroscopic study of energetic nitrogen fluxes applied to fabrication of nitride thin films. Observation of N3 radical and quantitative estimation of matrix-isolated N atoms. Journal of Applied Physics, 82 (4). 1921-1924 doi:10.1063/1.366271
Daw, Edward, Bradley, Richard F. (1997) Effect of high magnetic fields on the noise temperature of a heterostructure field-effect transistor low-noise amplifier. Journal of Applied Physics, 82 (4). 1925-1929 doi:10.1063/1.366000
Jagannathan, B., Anderson, W. A. (1997) Defect study in amorphous silicon/crystalline silicon solar cells by thermally stimulated capacitance. Journal of Applied Physics, 82 (4). 1930-1935 doi:10.1063/1.366001
Choi, Young-Wan (1997) Analysis of switching dynamics of asymmetric Fabry–Perot symmetric self-electro-optic effect devices with extremely shallow quantum wells. Journal of Applied Physics, 82 (4). 1936-1946 doi:10.1063/1.366002
Lai, P. T., Xu, J. P., Lo, H. B., Cheng, Y. C. (1997) A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment. Journal of Applied Physics, 82 (4). 1947-1950 doi:10.1063/1.366007
Karg, S., Meier, M., Riess, W. (1997) Light-emitting diodes based on poly-p-phenylene-vinylene: I. Charge-carrier injection and transport. Journal of Applied Physics, 82 (4). 1951-1960 doi:10.1063/1.366003
Meier, M., Karg, S., Riess, W. (1997) Light-emitting diodes based on poly-p-phenylene-vinylene: II. Impedance spectroscopy. Journal of Applied Physics, 82 (4). 1961-1966 doi:10.1063/1.366004
DĂłzsa, L., Van Tuyen, Vo, Hubik, P., Terziev, Nikolay, Mares, J. J., Kristofik, J. (1997) Deep level transient measurements ofDXcenters in GaAlAs up to room temperature. Journal of Applied Physics, 82 (4). 1967-1969 doi:10.1063/1.365945
Rakhimov, R. R., Wilkerson, A. L., Loutts, G. B., Ries, H. R. (1997) Off-axis extra lines in powder pattern electron paramagnetic resonance of Cr3+ in YAlO3. Journal of Applied Physics, 82 (4). 1970-1972 doi:10.1063/1.366005
Taylor, D. V., Damjanovic, D. (1997) Evidence of domain wall contribution to the dielectric permittivity in PZT thin films at sub-switching fields. Journal of Applied Physics, 82 (4). 1973-1975 doi:10.1063/1.366006
Yip, R. Y.-F., Masut, R. A. (1997) Band alignment strategy for efficient optical modulation in quantum-confined Stark effect devices. Journal of Applied Physics, 82 (4). 1976-1978 doi:10.1063/1.365943

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