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(1997, July) Journal of Applied Physics Vol. 82 (2) AIP Publishing

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Reference TypeJournal (issue)
JournalJournal of Applied Physics
Year1997 (July)Volume82
Issue<   2   >
PublisherAIP Publishing
Mindat Ref. ID5087756Long-form Identifiermindat:1:5:5087756:2
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Full Reference(1997, July) Journal of Applied Physics Vol. 82 (2) AIP Publishing
Plain Text(1997, July) Journal of Applied Physics Vol. 82 (2) AIP Publishing
In(1997) Journal of Applied Physics Vol. 82. AIP Publishing

Contains

Carminati, R., Madrazo, A., Nieto-Vesperinas, M., Greffet, J.-J. (1997) Optical content and resolution of near-field optical images: Influence of the operating mode. Journal of Applied Physics, 82 (2). 501-509 doi:10.1063/1.366270
Huntington, S. T., Nugent, K. A., Roberts, A., Mulvaney, P., Lo, K. M. (1997) Field characterization of a D-shaped optical fiber using scanning near-field optical microscopy. Journal of Applied Physics, 82 (2). 510-513 doi:10.1063/1.365608
Nilar, Shahul H., Dharma-wardana, M. W. C. (1997) Electronic structure calculations of doped organic materials for electroluminescent devices. Journal of Applied Physics, 82 (2). 514-521 doi:10.1063/1.365609
Hirayama, Tsukasa, Lai, Guanming, Tanji, Takayoshi, Tanaka, Nobuo, Tonomura, Akira (1997) Interference of three electron waves by two biprisms and its application to direct visualization of electromagnetic fields in small regions. Journal of Applied Physics, 82 (2). 522-527 doi:10.1063/1.365610
Oh-e, Masahito, Yoneya, Makoto, Kondo, Katsumi (1997) Switching of negative and positive dielectro-anisotropic liquid crystals by in-plane electric fields. Journal of Applied Physics, 82 (2). 528-535 doi:10.1063/1.365611
Monnier, A., Schnieper, M., Jaaniso, R., Bill, H. (1997) Samarium-doped thin films of the Matlockite structure: Design, luminescence, and hole-burning experiments. Journal of Applied Physics, 82 (2). 536-547 doi:10.1063/1.365612
Michler, P., Neukirch, U., Wundke, K., Gutowski, J., Behringer, M., Hommel, D. (1997) Picosecond lasing dynamics of gain-switched (Zn,Cd)Se/Zn(S,Se)/(Zn,Mg)(S,Se) quantum well lasers. Journal of Applied Physics, 82 (2). 548-551 doi:10.1063/1.365613
Booth, J. P., Cunge, G., Sadeghi, N., Boswell, R. W. (1997) The transition from symmetric to asymmetric discharges in pulsed 13.56 MHz capacitively coupled plasmas. Journal of Applied Physics, 82 (2). 552-560 doi:10.1063/1.365614
Smith, H. B., Charles, C., Boswell, R. W., Kuwahara, H. (1997) Bias formation in a pulsed radiofrequency argon discharge. Journal of Applied Physics, 82 (2). 561-565 doi:10.1063/1.365615
Hwang, Gyeong S., Giapis, Konstantinos P. (1997) Aspect-ratio-dependent charging in high-density plasmas. Journal of Applied Physics, 82 (2). 566-571 doi:10.1063/1.365616
Hwang, Gyeong S., Giapis, Konstantinos P. (1997) The influence of mask thickness on charging damage during overetching. Journal of Applied Physics, 82 (2). 572-577 doi:10.1063/1.365617
Zhang, Wen-qing, Xie, Qian, Ge, Xi-jin, Chen, Nan-xian (1997) Interatomic potentials between distinct atoms from first-principles calculation and lattice-inversion method. Journal of Applied Physics, 82 (2). 578-582 doi:10.1063/1.365618
Herner, S. B., Jones, K. S., Gossmann, H.-J., Tung, R. T., Poate, J. M., Luftman, H. S. (1997) Investigation of mechanisms of vacancy generation in silicon in the presence of a TiSi2 film. Journal of Applied Physics, 82 (2). 583-588 doi:10.1063/1.365619
Henley, Worth B., Ramappa, Deepak A. (1997) Iron precipitation in float zone grown silicon. Journal of Applied Physics, 82 (2). 589-594 doi:10.1063/1.365861
Obermeier, Guenther, Hage, Juergen, Huber, Diethard (1997) Oxygen precipitation and denuded zone characterization with the electrolytical metal tracer technique. Journal of Applied Physics, 82 (2). 595-600 doi:10.1063/1.365586
Pan, G. Z., Tu, K. N. (1997) Transmission electron microscopy on {113} rodlike defects and {111} dislocation loops in silicon-implanted silicon. Journal of Applied Physics, 82 (2). 601-608 doi:10.1063/1.365587
Renault, P. O., DeclĂ©my, A., LĂ©vĂȘque, P., Fayoux, C., BessiĂšre, M., Lefebvre, S., Corbel, C., Baroux, L. (1997) Study of damage induced by room-temperature Al ion implantation in Hg0.8Cd0.2Te by x-ray diffuse scattering. Journal of Applied Physics, 82 (2). 609-616 doi:10.1063/1.365588
Wada, Jun, Matsukura, Yusuke, Ogihara, Toshihiro, Ueda, Osamu (1997) CF4/O2 plasma induced damage in Si-implanted n-type GaAs crystals. Journal of Applied Physics, 82 (2). 617-621 doi:10.1063/1.365589
Wei, Guanghong, Zi, Jian, Zhang, Kaiming, Xie, Xide (1997) Lattice dynamics of GaN/AlN superlattices. Journal of Applied Physics, 82 (2). 622-627 doi:10.1063/1.366554
Evans, J. W. (1997) Approximations to the Whipple solution for grain boundary diffusion and an algorithm for their avoidance. Journal of Applied Physics, 82 (2). 628-634 doi:10.1063/1.365590
Takeda, Yoshikazu, Fujita, Keiji, Matsubara, Naoteru, Yamada, Naoki, Ichiki, Satofumi, Tabuchi, Masao, Fujiwara, Yasufumi (1997) Layer structure analysis of Er ÎŽ-doped InP by x-ray crystal truncation rod scattering. Journal of Applied Physics, 82 (2). 635-638 doi:10.1063/1.365591
Maruno, S., Fujita, S., Watanabe, H., Ichikawa, M. (1997) Observation of selective thermal desorption of electron stimulated SiO2 with a combined scanning reflection electron microscope/scanning tunneling microscope. Journal of Applied Physics, 82 (2). 639-643 doi:10.1063/1.365592
Huang, J. S., Huang, S. S., Tu, K. N., Deng, F., Lau, S. S., Cheng, S. L., Chen, L. J. (1997) Kinetics of Cu3Ge formation and reaction with Al. Journal of Applied Physics, 82 (2). 644-649 doi:10.1063/1.366291
Venugopalan, H. S., Mohney, S. E., Luther, B. P., Wolter, S. D., Redwing, J. M. (1997) Interfacial reactions between nickel thin films and GaN. Journal of Applied Physics, 82 (2). 650-654 doi:10.1063/1.365593
Dhar, S., Chakrabarti, S. (1997) Properties of chemically deposited Cu2S films on porous silicon. Journal of Applied Physics, 82 (2). 655-657 doi:10.1063/1.365594
Kim, Joo Han, Ahn, Dong Hoon, Kim, Yong Hwan, Baik, Hong Koo (1997) Characterization of amorphous hydrogenated carbon nitride films prepared by plasma-enhanced chemical vapor deposition using a helical resonator discharge. Journal of Applied Physics, 82 (2). 658-665 doi:10.1063/1.365595
Csillag, S., RÀty, R., Zou, W. Y., Sjöström, H., Sundgren, J.-E., Colliex, C. (1997) Extended energy loss fine structure analysis of hard and elastic carbon nitride thin films. Journal of Applied Physics, 82 (2). 666-669 doi:10.1063/1.365596
Semykina, Elena A., Roze, Ksenia S. (1997) Hot electron transport in n-GaAs field emitter at nitrogen temperature. Journal of Applied Physics, 82 (2). 670-676 doi:10.1063/1.365597
Badia, F., Batlle, X., Labarta, A., Watson, M. L., Johnston, A. B., Chapman, J. N. (1997) Magnetotransport properties of NiFe–Ag granular alloys: Origin of the thermal behavior. Journal of Applied Physics, 82 (2). 677-687 doi:10.1063/1.365598
Mooney, P. M., Tilly, L., D’Emic, C. P., Chu, J. O., Cardone, F., LeGoues, F. K., Meyerson, B. S. (1997) Defect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature. Journal of Applied Physics, 82 (2). 688-695 doi:10.1063/1.365599
Sato, Toshihiko, Ahmed, Haroon, Brown, David, Johnson, Brian F. G. (1997) Single electron transistor using a molecularly linked gold colloidal particle chain. Journal of Applied Physics, 82 (2). 696-701 doi:10.1063/1.365600
Dong, S., Tang, Y., Liebe, J., Braunstein, R., Crandall, R. S., Nelson, B. P., Mahan, A. H. (1997) Transport properties of intrinsic hydrogenated amorphous silicon produced by the hot-wire technique investigated by the photomixing technique. Journal of Applied Physics, 82 (2). 702-707 doi:10.1063/1.365601
Alvarez-Fregoso, O., Mendoza-Alvarez, J. G., Zelaya-Angel, O. (1997) Quantum confinement in nanostructured CdNiTe composite thin films. Journal of Applied Physics, 82 (2). 708-711 doi:10.1063/1.365602
Massa, J. S., Buller, G. S., Walker, A. C. (1997) Time-resolved photoluminescence studies of cross-well transport in a biased GaAs/AlGaAs multiple quantum well p-i-n structure. Journal of Applied Physics, 82 (2). 712-717 doi:10.1063/1.365603
Lei, X. L. (1997) Current suppression and harmonic generation by intense terahertz fields in semiconductor superlattices. Journal of Applied Physics, 82 (2). 718-721 doi:10.1063/1.365604
Hurd, C. M., McKinnon, W. R. (1997) Double-peaked decay of transient photocurrents in GaAs metal–semiconductor–metal photodetectors. Journal of Applied Physics, 82 (2). 722-728 doi:10.1063/1.365605
Wang, W. L., Jiang, X., Taube, K., Klages, C.-P. (1997) Piezoresistivity of polycrystalline p-type diamond films of various doping levels at different temperatures. Journal of Applied Physics, 82 (2). 729-732 doi:10.1063/1.365606
Caputo, D., Forghieri, U., Palma, F. (1997) Low-temperature admittance measurement in thin film amorphous silicon structures. Journal of Applied Physics, 82 (2). 733-741 doi:10.1063/1.365607
Donolato, C., Nipoti, R. (1997) Simulation of pulse height spectra in ion beam induced charge microscopy of polycrystalline silicon. Journal of Applied Physics, 82 (2). 742-747 doi:10.1063/1.365768
Xu, Qin, Gray, Matthew H., Hsu, J. W. P. (1997) Resolution and contrast in near-field photocurrent imaging of defects on semiconductors. Journal of Applied Physics, 82 (2). 748-755 doi:10.1063/1.365769
Johnson, H. L., Hechtfischer, G., Götz, G., Kleiner, R., MĂŒller, P. (1997) Zero-crossing steps in intrinsic Josephson junctions of Bi2Sr2CaCu2O8+ÎŽ. Journal of Applied Physics, 82 (2). 756-759 doi:10.1063/1.366259
Hu, Jifan, Yang, Fuming, Wang, Jianli, Pan, Hongge, Zhao, Ruwen, Tang, Ning, Wang, Yingang, Wang, Zhenxi, Zhou, Kaiwen, Zhong, Xiaping, de Boer, F. R. (1997) Structure and magnetic properties of TbMn6−xAlxSn6 compounds. Journal of Applied Physics, 82 (2). 760-763 doi:10.1063/1.365855
Honda, S., Nawate, M., Tanaka, M., Okada, T. (1997) Giant magnetoresistance and superparamagnetic grains in Co–Ag granular films. Journal of Applied Physics, 82 (2). 764-771 doi:10.1063/1.365770
Rosenman, G., Shur, D., Garb, Kh., Cohen, R., Krasik, Ya. E. (1997) Polarization switching in ferroelectric cathodes. Journal of Applied Physics, 82 (2). 772-778 doi:10.1063/1.365771
Duan, Ning, Cereceda, NoĂ©, Noheda, Beatriz, Gonzalo, Julio A. (1997) Dielectric characterization of the phase transitions in Pb1−y/2(Zr1−xTix)1−yNbyO3(0.03â©œxâ©œ0.04, 0.02â©œyâ©œ0.05). Journal of Applied Physics, 82 (2). 779-784 doi:10.1063/1.365772
Chaudhri, M. Munawar, Sands, Howard S. (1997) Photoluminescence from indented MgO crystals using a near ultraviolet/visible Raman microscope. Journal of Applied Physics, 82 (2). 785-791 doi:10.1063/1.365773
Zheng, Jun, Lin, Chih-Hsiang, Kuo, C. H. (1997) Optical properties of bulk AlGaAs. Journal of Applied Physics, 82 (2). 792-797 doi:10.1063/1.365774
Tanguy, Christian, Lefebvre, Pierre, Mathieu, Henry, Elliott, R. J. (1997) Analytical model for the refractive index in quantum wells derived from the complex dielectric constant of Wannier excitons in noninteger dimensions. Journal of Applied Physics, 82 (2). 798-802 doi:10.1063/1.365580
Groenen, J., Landa, G., Carles, R., Pizani, P. S., Gendry, M. (1997) Tensile and compressive strain relief in InxGa1−xAs epilayers grown on InP probed by Raman scattering. Journal of Applied Physics, 82 (2). 803-809 doi:10.1063/1.365775
GalvĂŁo Gobato, Y., Triques, A. L. C., Rivera, P. H., Schulz, P. A., Guldner, Y., Vinter, B. (1997) Optical probing of interface roughness in resonant tunneling structures. Journal of Applied Physics, 82 (2). 810-812 doi:10.1063/1.365776
Hogg, R. A., Takahei, K., Taguchi, A., Takarabe, K., Mizushima, T., Minomura, S. (1997) Configurational transformation of an Er center in GaAs:Er,O under hydrostatic pressure. Journal of Applied Physics, 82 (2). 813-816 doi:10.1063/1.365777
Bottomley, D. J., Mito, A., Niki, S., Yamada, A. (1997) Linear and nonlinear optical properties of CuInSe2 and CuGaSe2 epitaxial thin films on GaAs(001). Journal of Applied Physics, 82 (2). 817-824 doi:10.1063/1.365778
MassĂ©, G., Djessas, K. (1997) X-ray photoemission studies and energy-band diagrams of (In,Se)–CuInSe2/SnO2 heterostructures. Journal of Applied Physics, 82 (2). 825-829 doi:10.1063/1.365779
Chen, G., Borca-Tasciuc, T., Fair, R. B. (1997) Photon effect on radiative properties of silicon during rapid thermal processing. Journal of Applied Physics, 82 (2). 830-835 doi:10.1063/1.365780
Song, Li, El-Sayed, M. A., Chen, Peter C. (1997) Spectral diffusion within the porous silicon emission wavelength range on the nanosecond to millisecond time scale. Journal of Applied Physics, 82 (2). 836-839 doi:10.1063/1.365781
Tanaka, Katsuhisa, Fujita, Koji, Soga, Naohiro, Qiu, Jianrong, Hirao, Kazuyuki (1997) Faraday effect of sodium borate glasses containing divalent europium ions. Journal of Applied Physics, 82 (2). 840-844 doi:10.1063/1.365782
Jensen, K. L., Kodis, M. A., Murphy, R. A., Zaidman, E. G. (1997) Space charge effects on the current-voltage characteristics of gated field emitter arrays. Journal of Applied Physics, 82 (2). 845-854 doi:10.1063/1.365783
Voevodin, A. A., Prasad, S. V., Zabinski, J. S. (1997) Nanocrystalline carbide/amorphous carbon composites. Journal of Applied Physics, 82 (2). 855-858 doi:10.1063/1.365784
Kalburge, A., Konkar, A., Ramachandran, T. R., Chen, P., Madhukar, A. (1997) Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth. Journal of Applied Physics, 82 (2). 859-864 doi:10.1063/1.365785
Bel Hadj Tahar, Radhouane, Ban, Takayuki, Ohya, Yutaka, Takahashi, Yasutaka (1997) Optical, structural, and electrical properties of indium oxide thin films prepared by the sol-gel method. Journal of Applied Physics, 82 (2). 865-870 doi:10.1063/1.365786
Pansky, A., Breskin, A., Chechik, R. (1997) Fano factor and the mean energy per ion pair in counting gases, at low x-ray energies. Journal of Applied Physics, 82 (2). 871-877 doi:10.1063/1.365787
Smole, F., Topič, M., Furlan, J., Kusian, W. (1997) Hump-shaped internal collection efficiency of degraded a-Si:Hp-i-nsolar cells. Journal of Applied Physics, 82 (2). 878-882 doi:10.1063/1.365788
Jones, T. B., Washizu, Masao, Gans, Roger (1997) Simple theory for the LevitronÂź. Journal of Applied Physics, 82 (2). 883-888 doi:10.1063/1.365856
Liu, H. C., Li, L., Buchanan, M., Wasilewski, Z. R. (1997) Effect of the shape of the first barrier on quantum well infrared photodetector performance. Journal of Applied Physics, 82 (2). 889-892 doi:10.1063/1.365857
Wang, Gang, Liang, Chang Hong (1997) A remark on fast decay effect in the electromagnetic missile theory. Journal of Applied Physics, 82 (2). 893-895 doi:10.1063/1.366273
Gusev, E. P., Lu, H. C., Gustafsson, T., Garfunkel, E., Green, M. L., Brasen, D. (1997) The composition of ultrathin silicon oxynitrides thermally grown in nitric oxide. Journal of Applied Physics, 82 (2). 896-898 doi:10.1063/1.365858
Chen, H. M., Chen, Y. F., Lee, M. C., Feng, M. S. (1997) Persistent photoconductivity in n-type GaN. Journal of Applied Physics, 82 (2). 899-901 doi:10.1063/1.365859
Vatannia, S., Gildenblat, G., Schiano, J. (1997) Resonant tunneling emitter quantum mechanically coupled to a vacuum gap. Journal of Applied Physics, 82 (2). 902-904 doi:10.1063/1.365761
Shchegrov, A. V. (1997) Erratum: “Propagation of surface acoustic waves across the randomly rough surface of an anisotropic elastic medium” [J. Appl. Phys. 78, 1565 (1995)]. Journal of Applied Physics, 82 (2). 905 doi:10.1063/1.365860

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