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Mooney, P. M., Tilly, L., D’Emic, C. P., Chu, J. O., Cardone, F., LeGoues, F. K., Meyerson, B. S. (1997) Defect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature. Journal of Applied Physics, 82 (2). 688-695 doi:10.1063/1.365599

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Reference TypeJournal (article/letter/editorial)
TitleDefect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature
JournalJournal of Applied Physics
AuthorsMooney, P. M.Author
Tilly, L.Author
D’Emic, C. P.Author
Chu, J. O.Author
Cardone, F.Author
LeGoues, F. K.Author
Meyerson, B. S.Author
Year1997 (July 15)Volume82
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.365599Search in ResearchGate
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Mindat Ref. ID5087785Long-form Identifiermindat:1:5:5087785:4
GUID0
Full ReferenceMooney, P. M., Tilly, L., D’Emic, C. P., Chu, J. O., Cardone, F., LeGoues, F. K., Meyerson, B. S. (1997) Defect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature. Journal of Applied Physics, 82 (2). 688-695 doi:10.1063/1.365599
Plain TextMooney, P. M., Tilly, L., D’Emic, C. P., Chu, J. O., Cardone, F., LeGoues, F. K., Meyerson, B. S. (1997) Defect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature. Journal of Applied Physics, 82 (2). 688-695 doi:10.1063/1.365599
In(1997, July) Journal of Applied Physics Vol. 82 (2) AIP Publishing

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Tilly, L. P., Mooney, P. M., Chu, J. O., LeGoues, F. K. (1995) Near band‐edge photoluminescence in relaxed Si1−xGex layers. Applied Physics Letters, 67 (17). 2488-2490 doi:10.1063/1.114617
Mooney, P. M., Jordan‐Sweet, J. L., Ismail, K., Chu, J. O., Feenstra, R. M., LeGoues, F. K. (1995) Relaxed Si0.7Ge0.3 buffer layers for high‐mobility devices. Applied Physics Letters, 67 (16). 2373-2375 doi:10.1063/1.114349
Mooney, P. M., LeGoues, F. K., Chu, J. O., Nelson, S. F. (1993) Strain relaxation and mosaic structure in relaxed SiGe layers. Applied Physics Letters, 62 (26). 3464-3466 doi:10.1063/1.109021
Mooney, P. M., LeGoues, F. K., Tersoff, J., Chu, J. O. (1994) Nucleation of dislocations in SiGe layers grown on (001)Si. Journal of Applied Physics, 75 (8). 3968-3977 doi:10.1063/1.356992
Mooney, P. M., Jordan‐Sweet, J. L., Chu, J. O., LeGoues, F. K. (1995) Evolution of strain relaxation in step‐graded SiGe/Si structures. Applied Physics Letters, 66 (26). 3642-3644 doi:10.1063/1.114126
LeGoues, F. K., Mooney, P. M., Chu, J. O. (1993) Crystallographic tilting resulting from nucleation limited relaxation. Applied Physics Letters, 62 (2). 140-142 doi:10.1063/1.109351
Mooney, P. M., Dacol, F. H., Tsang, J. C., Chu, J. O. (1993) Raman scattering analysis of relaxed GexSi1−xalloy layers. Applied Physics Letters, 62 (17). 2069-2071 doi:10.1063/1.109481
Ismail, K., LeGoues, F. K., Saenger, K. L., Arafa, M., Chu, J. O., Mooney, P. M., Meyerson, B. S. (1994) Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures. Physical Review Letters, 73 (25). 3447-3450 doi:10.1103/physrevlett.73.3447
Li, J. H., Peng, C. S., Wu, Y., Dai, D. Y., Zhou, J. M., Mai, Z. H. (1997) Relaxed Si0.7Ge0.3 layers grown on low-temperature Si buffers with low threading dislocation density. Applied Physics Letters, 71 (21). 3132-3134 doi:10.1063/1.120268
Mooney, Patricia M., Shum, Kai (1997) Dislocation-Related Electronic States in Strain-Relaxed Si1-xGex/Si Epitaxial Layers Grown at Low Temperature. Materials Science Forum, 258. 151-158 doi:10.4028/www.scientific.net/msf.258-263.151
LeGoues, F. K., Meyerson, B. S., Morar, J. F., Kirchner, P. D. (1992) Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices. Journal of Applied Physics, 71 (9). 4230-4243 doi:10.1063/1.350803
 
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