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Henley, Worth B., Ramappa, Deepak A. (1997) Iron precipitation in float zone grown silicon. Journal of Applied Physics, 82 (2). 589-594 doi:10.1063/1.365861

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Reference TypeJournal (article/letter/editorial)
TitleIron precipitation in float zone grown silicon
JournalJournal of Applied Physics
AuthorsHenley, Worth B.Author
Ramappa, Deepak A.Author
Year1997 (July 15)Volume82
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.365861Search in ResearchGate
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Mindat Ref. ID5087883Long-form Identifiermindat:1:5:5087883:5
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Full ReferenceHenley, Worth B., Ramappa, Deepak A. (1997) Iron precipitation in float zone grown silicon. Journal of Applied Physics, 82 (2). 589-594 doi:10.1063/1.365861
Plain TextHenley, Worth B., Ramappa, Deepak A. (1997) Iron precipitation in float zone grown silicon. Journal of Applied Physics, 82 (2). 589-594 doi:10.1063/1.365861
In(1997, July) Journal of Applied Physics Vol. 82 (2) AIP Publishing

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Ramappa, Deepak A., Henley, Worth B. (1998) Surface photovoltage analysis of copper in p-type silicon. Applied Physics Letters, 72 (18). 2298-2300 doi:10.1063/1.121341
Henley, Worth B., Ramappa, Deepak A., Jastrezbski, Lubek (1999) Detection of copper contamination in silicon by surface photovoltage diffusion length measurements. Applied Physics Letters, 74 (2). 278-280 doi:10.1063/1.123280
Ramappa, Deepak A. (1997) Stability of Iron-Silicide Precipitates in Silicon. Journal of the Electrochemical Society, 144. 4353pp. doi:10.1149/1.1838192
Lin, Wen, Benton, J. L., Pinacho, R., Ramappa, D. A., Henley, W. (2000) Dominant iron gettering mechanism in p/p+ silicon wafers. Applied Physics Letters, 77 (2). 241-243 doi:10.1063/1.126937
Ramappa, Deepak A. (1999) Diffusion of Iron in Silicon Dioxide. Journal of the Electrochemical Society, 146. 3773pp. doi:10.1149/1.1392548
Ramappa, Deepak A. (2000) Surface photovoltage analysis of phase transformation of copper in p-type silicon. Applied Physics Letters, 76 (25). 3756-3758 doi:10.1063/1.126797
Inoue, Naohisa, Kawamura, Yuichi (2018) Infrared defect dynamics—Nitrogen-vacancy complexes in float zone grown silicon introduced by electron irradiation. Journal of Applied Physics, 123 (18). 185701pp. doi:10.1063/1.5011224
Gay, N., Martinuzzi, S. (1997) External self-gettering of nickel in float zone silicon wafers. Applied Physics Letters, 70 (19). 2568-2570 doi:10.1063/1.118921
Mariani, J. L., Pichaud, B., Minari, F., Martinuzzi, S. (1992) Quantitative determination of the recombining activities of 60° and screw dislocations in float zone and Czochralski‐grown silicon. Journal of Applied Physics, 71 (3). 1284-1289 doi:10.1063/1.351245
Kim, K. M., Dreeben, A. B., Schujko, A. (1979) Maximum stable zone length in float‐zone growth of small‐diameter sapphire and silicon crystals. Journal of Applied Physics, 50 (6). 4472-4474 doi:10.1063/1.326410
Sumino, Koji, Harada, Hirofumi, Yonenaga, Ichiro (1980) The Origin of the Difference in the Mechanical Strengths of Czochralski-Grown Silicon and Float-Zone-Grown Silicon. Japanese Journal of Applied Physics, 19 (1) doi:10.1143/jjap.19.l49
 
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