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Obermeier, Guenther, Hage, Juergen, Huber, Diethard (1997) Oxygen precipitation and denuded zone characterization with the electrolytical metal tracer technique. Journal of Applied Physics, 82 (2). 595-600 doi:10.1063/1.365586

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Reference TypeJournal (article/letter/editorial)
TitleOxygen precipitation and denuded zone characterization with the electrolytical metal tracer technique
JournalJournal of Applied Physics
AuthorsObermeier, GuentherAuthor
Hage, JuergenAuthor
Huber, DiethardAuthor
Year1997 (July 15)Volume82
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.365586Search in ResearchGate
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Mindat Ref. ID5087758Long-form Identifiermindat:1:5:5087758:0
GUID0
Full ReferenceObermeier, Guenther, Hage, Juergen, Huber, Diethard (1997) Oxygen precipitation and denuded zone characterization with the electrolytical metal tracer technique. Journal of Applied Physics, 82 (2). 595-600 doi:10.1063/1.365586
Plain TextObermeier, Guenther, Hage, Juergen, Huber, Diethard (1997) Oxygen precipitation and denuded zone characterization with the electrolytical metal tracer technique. Journal of Applied Physics, 82 (2). 595-600 doi:10.1063/1.365586
In(1997, July) Journal of Applied Physics Vol. 82 (2) AIP Publishing

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Obermeier, Guenther, Huber, Diethard (1997) Iron detection in polished and epitaxial silicon wafers using generation lifetime measurements. Journal of Applied Physics, 81 (11). 7345-7349 doi:10.1063/1.365440
Henley, Worth B., Ramappa, Deepak A. (1997) Iron precipitation in float zone grown silicon. Journal of Applied Physics, 82 (2). 589-594 doi:10.1063/1.365861
Xu, Jin, Yang, Deren, Moeller, H. J. (2007) Influence of copper precipitation on the formation of denuded zone in Czochralski silicon. Journal of Applied Physics, 102 (11). 114506pp. doi:10.1063/1.2821311
Murray, E. M. (1984) Denuded zone formation inp〈100〉 silicon. Journal of Applied Physics, 55 (2). 536-541 doi:10.1063/1.333059
Lu, Jinggang, Rozgonyi, George, Rand, James, Jonczyk, Ralf (2004) Oxygen precipitate denuded zone in polycrystalline sheet silicon. Applied Physics Letters, 85 (7). 1178-1180 doi:10.1063/1.1781369
Schrems, M. (1993) Simulation of Oxygen Precipitation and Denuded Zone Formation during Thermal Anneals. Materials Science Forum, 117. 231-236 doi:10.4028/www.scientific.net/msf.117-118.231
Spiga, S., Castaldini, A., Cavallini, A., Polignano, M. L., Cazzaniga, F. (1999) Denuded zone and diffusion length investigation by electron beam induced current technique in intrinsically gettered Czochralski silicon. Journal of Applied Physics, 85 (3). 1395-1400 doi:10.1063/1.369271
Zhao, Yiying, Li, Dongsheng, Ma, Xiangyang, Yang, Deren (2004) The effect of the ramping rate on oxygen precipitation and the denuded zone in heavily doped Czochralski silicon. Journal of Physics: Condensed Matter, 16 (9). 1539-1545 doi:10.1088/0953-8984/16/9/003
Antula, J. (1979) Electrolytical doping of silicon with lithium. Journal of Applied Physics, 50 (4). 2721-2722 doi:10.1063/1.326232
Falkenstein, Zoran, Coogan, John J. (1997) Photoresist etching with dielectric barrier discharges in oxygen. Journal of Applied Physics, 82 (12). 6273-6280 doi:10.1063/1.366514
Miyairi, Hiroo, Suzuki, Isamu, Horioka, Y\=ukichi (1992) Quick and Quantitative Measurement of Oxygen Precipitates near Denuded Zone in Intrinsic-Gettering-Treated Czochralski-Si Wafers. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l1309
 
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