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Dózsa, L., Van Tuyen, Vo, Hubik, P., Terziev, Nikolay, Mares, J. J., Kristofik, J. (1997) Deep level transient measurements ofDXcenters in GaAlAs up to room temperature. Journal of Applied Physics, 82 (4). 1967-1969 doi:10.1063/1.365945

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Reference TypeJournal (article/letter/editorial)
TitleDeep level transient measurements ofDXcenters in GaAlAs up to room temperature
JournalJournal of Applied Physics
AuthorsDózsa, L.Author
Van Tuyen, VoAuthor
Hubik, P.Author
Terziev, NikolayAuthor
Mares, J. J.Author
Kristofik, J.Author
Year1997 (August 15)Volume82
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.365945Search in ResearchGate
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Mindat Ref. ID5088077Long-form Identifiermindat:1:5:5088077:9
GUID0
Full ReferenceDózsa, L., Van Tuyen, Vo, Hubik, P., Terziev, Nikolay, Mares, J. J., Kristofik, J. (1997) Deep level transient measurements ofDXcenters in GaAlAs up to room temperature. Journal of Applied Physics, 82 (4). 1967-1969 doi:10.1063/1.365945
Plain TextDózsa, L., Van Tuyen, Vo, Hubik, P., Terziev, Nikolay, Mares, J. J., Kristofik, J. (1997) Deep level transient measurements ofDXcenters in GaAlAs up to room temperature. Journal of Applied Physics, 82 (4). 1967-1969 doi:10.1063/1.365945
In(1997, August) Journal of Applied Physics Vol. 82 (4) AIP Publishing

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Dózsa, L., Riesz, F., Karányi, J., Van Tuyen, Vo, Szentpáli, B., Muller, A. (1997) A Transient Method for Measuring Current–Voltage Characteristics with Negative Differential Resistance Regions. physica status solidi (a), 163 (1). doi:10.1002/1521-396x(199709)163:13.0.co;2-g
Criado, J., Gomez, A., Muñoz, E., Calleja, E. (1986) Deep level transient spectroscopy signature analysis ofDXcenters in AlGaAs and GaAsP. Applied Physics Letters, 49 (26). 1790-1792 doi:10.1063/1.97192
Bourgoin, J. C., Feng, S. L., Stiévenard, D., Letartre, X., Barbier, E., Hirtz, J. P. (1989) Suppression ofDXcenters in GaAlAs‐GaAs heterostructures. Applied Physics Letters, 54 (12). 1115-1117 doi:10.1063/1.100774
Scheffler, L., Kolkovsky, Vl., Weber, J. (2015) Isolated Ti in Si: Deep level transient spectroscopy, minority carrier transient spectroscopy, and high-resolution Laplace deep level transient spectroscopy studies. Journal of Applied Physics, 117 (4). 45713pp. doi:10.1063/1.4906855
Mares, Jirí, Spicka, Václav, Kristofik, Jozef, Hubik, Pavel (2004) On Expansion of a Spherical Enclosure Bathed in Zero-Point Radiation. Entropy, 6 (1). 216-222 doi:10.3390/e6010216
Dueñas, S., Pinacho, R., Castán, E., Quintanilla, L., Peláez, R., Barbolla, J. (1997) Detailed electrical characterization ofDXcenters in Se-doped AlxGa1−xAs. Journal of Applied Physics, 82 (9). 4338-4345 doi:10.1063/1.366242
He, L. L., Taniguchi, T., Sato, T., Horiuchi, S. (1997) Highly irregular stacking structure in r-BN pressed up to 7.7 GPa at room temperature. Journal of Applied Physics, 82 (9). 4241-4245 doi:10.1063/1.366230
McFee, J. H., Tien, P. K., Hodges, H. L. (1967) Transient Approach to Current Saturation in Photoconductive CdS. Journal of Applied Physics, 38 (4). 1721-1729 doi:10.1063/1.1709749
Horváth, Zs.J., Frigeri, P., Franchi, S., Van Tuyen, Vo., Gombia, E., Mosca, R., Dózsa, L. (2002) Current instabilities in GaAs/InAs self-aggregated quantum dot structures. Applied Surface Science, 190. 222-225 doi:10.1016/s0169-4332(01)00872-8
Lauwaert, J., Van Gheluwe, J., Clauws, P. (2008) An accurate analytical approximation to the capacitance transient amplitude in deep level transient spectroscopy for fitting carrier capture data. Review of Scientific Instruments, 79 (9). 93902pp. doi:10.1063/1.2977550
Lee, W. I., Borrego, J. M. (1988) Minority‐carrier emission effect in deep level transient spectroscopy measurements on Schottky diodes. Journal of Applied Physics, 63 (11). 5357-5362 doi:10.1063/1.340352
 
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