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He, L. L., Taniguchi, T., Sato, T., Horiuchi, S. (1997) Highly irregular stacking structure in r-BN pressed up to 7.7 GPa at room temperature. Journal of Applied Physics, 82 (9). 4241-4245 doi:10.1063/1.366230

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Reference TypeJournal (article/letter/editorial)
TitleHighly irregular stacking structure in r-BN pressed up to 7.7 GPa at room temperature
JournalJournal of Applied Physics
AuthorsHe, L. L.Author
Taniguchi, T.Author
Sato, T.Author
Horiuchi, S.Author
Year1997 (November)Volume82
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.366230Search in ResearchGate
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Mindat Ref. ID5089006Long-form Identifiermindat:1:5:5089006:8
GUID0
Full ReferenceHe, L. L., Taniguchi, T., Sato, T., Horiuchi, S. (1997) Highly irregular stacking structure in r-BN pressed up to 7.7 GPa at room temperature. Journal of Applied Physics, 82 (9). 4241-4245 doi:10.1063/1.366230
Plain TextHe, L. L., Taniguchi, T., Sato, T., Horiuchi, S. (1997) Highly irregular stacking structure in r-BN pressed up to 7.7 GPa at room temperature. Journal of Applied Physics, 82 (9). 4241-4245 doi:10.1063/1.366230
In(1997, November) Journal of Applied Physics Vol. 82 (9) AIP Publishing

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Dózsa, L., Van Tuyen, Vo, Hubik, P., Terziev, Nikolay, Mares, J. J., Kristofik, J. (1997) Deep level transient measurements ofDXcenters in GaAlAs up to room temperature. Journal of Applied Physics, 82 (4). 1967-1969 doi:10.1063/1.365945
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Golberg, D., Bando, Y., Bourgeois, L., Kurashima, K., Sato, T. (2000) Insights into the structure of BN nanotubes. Applied Physics Letters, 77 (13). 1979-1981 doi:10.1063/1.1313251
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Gutiérrez, A, Molodtsov, S L (1997) Electronic structure close to the Fermi energy of at room temperature. Journal of Physics: Condensed Matter, 9 (50). 11151-11156 doi:10.1088/0953-8984/9/50/016
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Bassett, W. A., Weathers, M. S., Wu, T.‐C., Holmquist, T. (1993) Compressibility of SiC up to 68.4 GPa. Journal of Applied Physics, 74 (6). 3824-3826 doi:10.1063/1.354476
Cadore, A. R., Mania, E., Watanabe, K., Taniguchi, T., Lacerda, R. G., Campos, L. C. (2016) Thermally activated hysteresis in high quality graphene/h-BN devices. Applied Physics Letters, 108 (23). 233101pp. doi:10.1063/1.4953162
 
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