1.365959

Library Home Bookshelves View by Type Using Search

Books Catalogs/Sales Lists Journals Reports Thesis/Dissertation

Search for Books Search for Journals Manage Subjects Statistics Books without DDC/LCC Top Unstructured Orphaned Articles

Bookshelves (DDC layout)Bookshelves (LCC layout)Latest Books

Advanced

Search inside 'Journal of Applied ...' only

- Only viewable:

Reference Type	Journal (article/letter/editorial)
Title	Structural evaluation of InAsP/InGaAsP strained-layer superlattices with dislocations as grown by metal-organic molecular beam epitaxy
Journal	Journal of Applied Physics
Authors	Nakashima, Kiichi		Author
Authors	Sugiura, Hideo		Author
Year	1997 (August 15)	Volume	82
Issue	4
Publisher	AIP Publishing
DOI	doi:10.1063/1.365959Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	5088105	Long-form Identifier	mindat:1:5:5088105:1
GUID	0
Full Reference	Nakashima, Kiichi, Sugiura, Hideo (1997) Structural evaluation of InAsP/InGaAsP strained-layer superlattices with dislocations as grown by metal-organic molecular beam epitaxy. Journal of Applied Physics, 82 (4). 1599-1607 doi:10.1063/1.365959
Plain Text	Nakashima, Kiichi, Sugiura, Hideo (1997) Structural evaluation of InAsP/InGaAsP strained-layer superlattices with dislocations as grown by metal-organic molecular beam epitaxy. Journal of Applied Physics, 82 (4). 1599-1607 doi:10.1063/1.365959
In	(1997, August) Journal of Applied Physics Vol. 82 (4) AIP Publishing

	Sugiura, Hideo, Mitsuhara, Manabu, Ogasawara, Matsuyuki, Itoh, Masayuki, Kamada, Hidehiko (1997) Structural and optical properties of 1.3 μm wavelength tensile-strained InGaAsP multiquantum wells grown by metalorganic molecular beam epitaxy. Journal of Applied Physics, 81 (3). 1427-1433 doi:10.1063/1.364180
	Nakashima, Kiichi, Sugiura, Hideo (1997) A Novel Graphical Analysis Method for Double Crystal X-Ray Diffraction Measurements of Strained Layer Superlattices Grown on (100) Substrate. Japanese Journal of Applied Physics, 36. 5351-5355 doi:10.1143/jjap.36.5351
	Sugiura, Hideo, Ogasawara, Matsuyuki, Mitsuhara, Manabu, Oohashi, Hiromi, Amano, Toshimasa (1996) Metalorganic molecular beam epitaxy of strain‐compensated InAsP/InGaAsP multi‐quantum‐well lasers. Journal of Applied Physics, 79 (3). 1233-1237 doi:10.1063/1.361016
	*Hou, H. Q., Tu, C. W. (1992) Insitucontrol of As composition in InAsP and InGaAsP grown by gas‐source molecular beam epitaxy. Applied Physics Letters, 60 (15). 1872-1874 doi:10.1063/1.107139*
	Sugiura, Hideo, Mitsuhara, Manabu, Oohashi, Hiromi, Hirono, Takuo, Nakashima, Kiichi (1995) Metalorganic molecular beam epitaxy of strained multi-quantum-wells for 1.3 μm wavelength laser diodes. Journal of Crystal Growth, 147 (1). 1-7 doi:10.1016/0022-0248(94)00650-4
	Sugiura, Hideo, Mitsuhara, Manabu, Kondo, Susumu (1998) Characterization of heavily carbon-doped InGaAsP layers grown by chemical beam epitaxy using tetrabromide. Applied Physics Letters, 73 (17). 2482-2484 doi:10.1063/1.122489
	Nishi, Kenichi, Hirose, Kazuyuki, Mizutani, Takashi (1986) Optical characterization of InGaAs‐InAlAs strained‐layer superlattices grown by molecular beam epitaxy. Applied Physics Letters, 49 (13). 794-796 doi:10.1063/1.97549
	Nakao, Masashi, Iga, Ryuzo, Yamada, Takeshi, Sugiura, Hideo (1992) High-Performance 1.5-µm Distributed Feed Back Lasers with Strained Multi-Quantum Well Structure Grown by Metalorganic Molecular Beam Epitaxy (Chemical Beam Epitaxy) Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l1549
	Carlin, J. F., Syrbu, A. V., Berseth, C. A., Behrend, J., Rudra, A., Kapon, E. (1997) Low threshold 1.55 μm wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by chemical beam epitaxy. Applied Physics Letters, 71 (1). 13-15 doi:10.1063/1.119453
	Hao, Zhi-Biao, Ren, Zai-Yuan, He, Wei, Luo, Yi (2002) 1.55 µm InAsP/InGaAsP Strained Multiple-Quantum-Well Laser Diodes Grown by Solid-Source Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 41. 754-757 doi:10.1143/jjap.41.754
	Yamada, T., Iga, R., Sugiura, H. (1992) Double‐wavelength laser array with InGaAsP/InGaAsP multiple quantum well grown by Ar ion laser‐assisted metalorganic molecular beam epitaxy. Applied Physics Letters, 61 (20). 2449-2451 doi:10.1063/1.108148

Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 21, 2025 16:01:53

Go to top of page

Nakashima, Kiichi, Sugiura, Hideo (1997) Structural evaluation of InAsP/InGaAsP strained-layer superlattices with dislocations as grown by metal-organic molecular beam epitaxy. Journal of Applied Physics, 82 (4). 1599-1607 doi:10.1063/1.365959

See Also