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Osten, H. J., Bugiel, E., Zaumseil, P. (1997) Self-organization during Si1−yCy alloy layer growth on Si(001) using homogeneous coevaporation. Journal of Applied Physics, 82 (1). 231-235 doi:10.1063/1.365862

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Reference TypeJournal (article/letter/editorial)
TitleSelf-organization during Si1−yCy alloy layer growth on Si(001) using homogeneous coevaporation
JournalJournal of Applied Physics
AuthorsOsten, H. J.Author
Bugiel, E.Author
Zaumseil, P.Author
Year1997 (July)Volume82
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.365862Search in ResearchGate
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Mindat Ref. ID5087205Long-form Identifiermindat:1:5:5087205:3
GUID0
Full ReferenceOsten, H. J., Bugiel, E., Zaumseil, P. (1997) Self-organization during Si1−yCy alloy layer growth on Si(001) using homogeneous coevaporation. Journal of Applied Physics, 82 (1). 231-235 doi:10.1063/1.365862
Plain TextOsten, H. J., Bugiel, E., Zaumseil, P. (1997) Self-organization during Si1−yCy alloy layer growth on Si(001) using homogeneous coevaporation. Journal of Applied Physics, 82 (1). 231-235 doi:10.1063/1.365862
In(1997, July) Journal of Applied Physics Vol. 82 (1) AIP Publishing

See Also

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Fischer, G. G., Zaumseil, P., Bugiel, E., Osten, H. J. (1995) Investigation of the high temperature behavior of strained Si1−yCy /Si heterostructures. Journal of Applied Physics, 77 (5). 1934-1937 doi:10.1063/1.358826
Osten, H. J., Gaworzewski, P. (1997) Charge transport in strained Si1−yCy and Si1−x−yGexCy alloys on Si(001). Journal of Applied Physics, 82 (10). 4977-4981 doi:10.1063/1.366364
Osten, H. J., Bugiel, E., Zaumseil, P. (1994) Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon. Applied Physics Letters, 64 (25). 3440-3442 doi:10.1063/1.111235
Osten, H.J., Bugiel, E., Zaumseil, P. (1994) Antimony-mediated growth of epitaxial Ge1−yCy layers on Si(001). Journal of Crystal Growth, 142 (3). 322-326 doi:10.1016/0022-0248(94)90339-5
Osten, H. J., Kim, Myeongcheol, Pressel, K., Zaumseil, P. (1996) Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCyon Si(001). Journal of Applied Physics, 80 (12). 6711-6715 doi:10.1063/1.363797
Kim, Myeongcheol, Osten, H. J. (1997) X-ray photoelectron spectroscopic evaluation of valence band offsets for strained Si1−xGex, Si1−yCy, and Si1−x−yGexCy on Si(001). Applied Physics Letters, 70 (20). 2702-2704 doi:10.1063/1.118998
Dietrich, B., Bugiel, E., Osten, H. J., Zaumseil, P. (1993) Raman investigations of elastic strain relief in Si1−xGexlayers on patterned silicon substrate. Journal of Applied Physics, 74 (12). 7223-7227 doi:10.1063/1.355335
Liu, J. P., Zaumseil, P., Bugiel, E., Osten, H. J. (2001) Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealing. Applied Physics Letters, 79 (5). 671-673 doi:10.1063/1.1389509
Kissinger, W., Osten, H. J., Weidner, M., Eichler, M. (1996) Critical points of Si1−yCy and Si1−x−yGexCy layers strained pseudomorphically on Si(001). Journal of Applied Physics, 79 (6). 3016-3020 doi:10.1063/1.362705
Garrido, B., Morante, J. R., Franz, M., Pressel, K., Krüger, D., Zaumseil, P., Osten, H. J. (1999) Behavior of strained Si1−yCy (0⩽y⩽0.02) layers grown on silicon during wet oxidation. Journal of Applied Physics, 85 (2). 833-840 doi:10.1063/1.369168
Osten, H. J., Griesche, J., Gaworzewski, P., Bolze, K. D. (2000) Influence of interstitial carbon defects on electron transport in strained Si1−yCy layers on Si(001). Applied Physics Letters, 76 (2). 200-202 doi:10.1063/1.125702
 
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