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Osten, H. J., Gaworzewski, P. (1997) Charge transport in strained Si1−yCy and Si1−x−yGexCy alloys on Si(001). Journal of Applied Physics, 82 (10). 4977-4981 doi:10.1063/1.366364

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Reference TypeJournal (article/letter/editorial)
TitleCharge transport in strained Si1−yCy and Si1−x−yGexCy alloys on Si(001)
JournalJournal of Applied Physics
AuthorsOsten, H. J.Author
Gaworzewski, P.Author
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366364Search in ResearchGate
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Mindat Ref. ID5087331Long-form Identifiermindat:1:5:5087331:7
GUID0
Full ReferenceOsten, H. J., Gaworzewski, P. (1997) Charge transport in strained Si1−yCy and Si1−x−yGexCy alloys on Si(001). Journal of Applied Physics, 82 (10). 4977-4981 doi:10.1063/1.366364
Plain TextOsten, H. J., Gaworzewski, P. (1997) Charge transport in strained Si1−yCy and Si1−x−yGexCy alloys on Si(001). Journal of Applied Physics, 82 (10). 4977-4981 doi:10.1063/1.366364
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

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Kim, Myeongcheol, Osten, H. J. (1997) X-ray photoelectron spectroscopic evaluation of valence band offsets for strained Si1−xGex, Si1−yCy, and Si1−x−yGexCy on Si(001). Applied Physics Letters, 70 (20). 2702-2704 doi:10.1063/1.118998
Kissinger, W., Osten, H. J., Weidner, M., Eichler, M. (1996) Critical points of Si1−yCy and Si1−x−yGexCy layers strained pseudomorphically on Si(001). Journal of Applied Physics, 79 (6). 3016-3020 doi:10.1063/1.362705
Osten, H. J., Griesche, J., Gaworzewski, P., Bolze, K. D. (2000) Influence of interstitial carbon defects on electron transport in strained Si1−yCy layers on Si(001). Applied Physics Letters, 76 (2). 200-202 doi:10.1063/1.125702
Osten, H. J., Bugiel, E., Zaumseil, P. (1997) Self-organization during Si1−yCy alloy layer growth on Si(001) using homogeneous coevaporation. Journal of Applied Physics, 82 (1). 231-235 doi:10.1063/1.365862
Osten, H. Jörg (1998) Band-gap changes and band offsets for ternary Si1−x−yGexCy alloys on Si(001). Journal of Applied Physics, 84 (5). 2716-2721 doi:10.1063/1.368383
Price, R. W., Tok, E. S., Woods, N. J., Zhang, J. (2002) Growth dynamics of Si1−yCy and Si1−x−yGexCy on Si(001) surface from disilane, germane, and methylsilane. Applied Physics Letters, 81 (20). 3780-3782 doi:10.1063/1.1519734
Osten, H. J., Griesche, J., Scalese, S. (1999) Substitutional carbon incorporation in epitaxial Si1−yCy alloys on Si(001) grown by molecular beam epitaxy. Applied Physics Letters, 74 (6). 836-838 doi:10.1063/1.123384
Osten, H. J., Bugiel, E. (1997) Relaxed Si1−xGex/Si1−x−yGexCy buffer structures with low threading dislocation density. Applied Physics Letters, 70 (21). 2813-2815 doi:10.1063/1.119067
Stewart, E. J., Carroll, M. S., Sturm, J. C. (2004) Boron segregation and electrical properties in polycrystalline Si1−x−yGexCy and Si1−yCy alloys. Journal of Applied Physics, 95 (8). 4029-4035 doi:10.1063/1.1649452
Fischer, G. G., Zaumseil, P., Bugiel, E., Osten, H. J. (1995) Investigation of the high temperature behavior of strained Si1−yCy /Si heterostructures. Journal of Applied Physics, 77 (5). 1934-1937 doi:10.1063/1.358826
Kissinger, W., Weidner, M., Osten, H. J., Eichler, M. (1994) Optical transitions in strained Si1−yCylayers on Si(001). Applied Physics Letters, 65 (26). 3356-3358 doi:10.1063/1.112390
 
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