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Lan, A. D., Liu, B. X., Bai, X. D. (1997) Annealing-induced blue shift in luminescence band from Si-implanted SiO2 layer. Journal of Applied Physics, 82 (10). 5144-5147 doi:10.1063/1.366317

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Reference TypeJournal (article/letter/editorial)
TitleAnnealing-induced blue shift in luminescence band from Si-implanted SiO2 layer
JournalJournal of Applied Physics
AuthorsLan, A. D.Author
Liu, B. X.Author
Bai, X. D.Author
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366317Search in ResearchGate
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Mindat Ref. ID5087236Long-form Identifiermindat:1:5:5087236:3
GUID0
Full ReferenceLan, A. D., Liu, B. X., Bai, X. D. (1997) Annealing-induced blue shift in luminescence band from Si-implanted SiO2 layer. Journal of Applied Physics, 82 (10). 5144-5147 doi:10.1063/1.366317
Plain TextLan, A. D., Liu, B. X., Bai, X. D. (1997) Annealing-induced blue shift in luminescence band from Si-implanted SiO2 layer. Journal of Applied Physics, 82 (10). 5144-5147 doi:10.1063/1.366317
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

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Liu, B.X., Lan, A.D., Bai, X.D. (1998) Luminescence band evolution in Si implanted SiO2 layer upon high temperature annealing. Materials Chemistry and Physics, 54. 356-359 doi:10.1016/s0254-0584(98)00083-2
Lan, Aidong, Liu, Baixin, Bai, Xinde (1997) Visible Luminescence Induced by Si-Ion Implantation into Si Single Crystals Covered with a Thin SiO2 Layer. Japanese Journal of Applied Physics, 36. doi:10.1143/jjap.36.l1019
Lan, A D, Liu, B X, Bai, X D (1997) Visible photoluminescence induced in samples by Si implantation. Journal of Physics: Condensed Matter, 9 (23). 4987-4993 doi:10.1088/0953-8984/9/23/022
Wu, X. L., Gao, T., Bao, X. M., Yan, F., Jiang, S. S., Feng, D. (1997) Annealing temperature dependence of Raman scattering in Ge+-implanted SiO2 films. Journal of Applied Physics, 82 (5). 2704-2706 doi:10.1063/1.366089
Lan, A.D., Bai, X.D., Liu, B.X. (1997) Si-ion implantation-induced luminescence from Si single crystals with a SiO2 overlayer. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 127. 503-506 doi:10.1016/s0168-583x(96)00979-2
Kirillov, D., Merz, J. L., Kalish, R., Ron, A. (1984) Band‐to‐band luminescence of ion‐implanted InP after rapid lamp annealing. Applied Physics Letters, 44 (6). 609-610 doi:10.1063/1.94850
Green, R. J., Zatsepin, D. A., St. Onge, D. J., Kurmaev, E. Z., Gavrilov, N. V., Zatsepin, A. F., Moewes, A. (2014) Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO2. Journal of Applied Physics, 115 (10). 103708pp. doi:10.1063/1.4868297
Zhou, X. D., Ren, F., Xiao, X. H., Xu, J. X., Dai, Z. G., Cai, G. X., Jiang, C. Z. (2012) Origin of white light luminescence from Si+/C+ sequentially implanted and annealed silica. Journal of Applied Physics, 111 (8). 84304pp. doi:10.1063/1.3703668
Zhao, J., Mao, D. S., Lin, Z. X., Jiang, B. Y., Yu, Y. H., Liu, X. H., Wang, H. Z., Yang, G. Q. (1998) Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions. Applied Physics Letters, 73 (13). 1838-1840 doi:10.1063/1.122299
Bai, G., Nicolet, M.‐A. (1991) Defects production and annealing in self‐implanted Si. Journal of Applied Physics, 70 (2). 649-655 doi:10.1063/1.349668
Barba, D., Martin, F., Dahmoune, C., Ross, G. G. (2006) Effects of oxide layer thickness on Si-nanocrystal photoluminescence intensity in Si+-implanted SiO2∕Si systems. Applied Physics Letters, 89 (3). 34107pp. doi:10.1063/1.2234739
 
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