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Chavan, S. T., Dhole, S. D., Bhoraskar, V. N., Kanjilal, D., Mehta, G. K. (1997) Depth distribution of silicon-ion induced defects in crystalline silicon. Journal of Applied Physics, 82 (10). 4805-4809 doi:10.1063/1.366339

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Reference TypeJournal (article/letter/editorial)
TitleDepth distribution of silicon-ion induced defects in crystalline silicon
JournalJournal of Applied Physics
AuthorsChavan, S. T.Author
Dhole, S. D.Author
Bhoraskar, V. N.Author
Kanjilal, D.Author
Mehta, G. K.Author
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366339Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5087282Long-form Identifiermindat:1:5:5087282:2
GUID0
Full ReferenceChavan, S. T., Dhole, S. D., Bhoraskar, V. N., Kanjilal, D., Mehta, G. K. (1997) Depth distribution of silicon-ion induced defects in crystalline silicon. Journal of Applied Physics, 82 (10). 4805-4809 doi:10.1063/1.366339
Plain TextChavan, S. T., Dhole, S. D., Bhoraskar, V. N., Kanjilal, D., Mehta, G. K. (1997) Depth distribution of silicon-ion induced defects in crystalline silicon. Journal of Applied Physics, 82 (10). 4805-4809 doi:10.1063/1.366339
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

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Chavan, S. T., Bhave, P. S., Bhoraskar, V. N., Kanjilal, D. (1995) Damage induced by 90 MeV silicon ions in crystalline silicon. Journal of Applied Physics, 78 (4). 2328-2332 doi:10.1063/1.360150
Chaudhari, Prajakta S., Bhave, Tejashree M., Kanjilal, D., Bhoraskar, S. V. (2003) Swift heavy ion induced growth of nanocrystalline silicon in silicon oxide. Journal of Applied Physics, 93 (6). 3486-3489 doi:10.1063/1.1542913
Railkar, Tarak A., Bhoraskar, S. V., Dhole, S. D., Bhoraskar, V. N. (1993) Defect studies in oxygen‐ion‐irradiated silicon‐based metal‐insulator‐semiconductor structures. Journal of Applied Physics, 74 (7). 4343-4346 doi:10.1063/1.354400
Padgaonkar, S, Dhole, S D, Bhoraskar, V N (1991) Comparison of 14 MeV neutron-induced and 1 MeV electron-induced radiation damage in crystalline silicon. Journal of Physics D: Applied Physics, 24. 702-705 doi:10.1088/0022-3727/24/5/011
Shinde, N.S., Dahiwale, S.S., Kanjilal, D., Bhoraskar, V.N., Dhole, S.D. (2006) Depth distribution of carrier lifetime in 65MeV oxygen ion irradiated silicon wafers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 244 (1). 161-165 doi:10.1016/j.nimb.2005.11.030
Hareesh, K, Joshi, R P, Shateesh, B, Asokan, K, Kanjilal, D, Late, D J, Dahiwale, S S, Bhoraskar, V N, Haram, S K, Dhole, S D (2015) Reduction of graphene oxide by 100 MeV Au ion irradiation and its application as H2O2sensor. Journal of Physics D: Applied Physics, 48. 365105pp. doi:10.1088/0022-3727/48/36/365105
Sathyavathi, P., Chavan, S.T., Kanjilal, D., Bhoraskar, V.N. (1999) Heavy ion induced damage in crystalline silicon and diodes. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 156 (1). 72-77 doi:10.1016/s0168-583x(99)00289-x
Mahapatra, S. K., Dhole, S. D., Bhoraskar, V. N., Raju, Gorur G. (2006) Dependence of charge buildup in the polyimide on the incident electron energy. Journal of Applied Physics, 100 (3). 34913pp. doi:10.1063/1.2210798
Bhave, Tejashree M, Bhoraskar, S V, Kulkarni, Shriram, Bhoraskar, V N (1996) Improvement in the photoluminescence efficiency of porous silicon using high-energy silicon ion irradiation. Journal of Physics D: Applied Physics, 29. 462-465 doi:10.1088/0022-3727/29/2/026
Railkar, T. A., Bhoraskar, S. V. (1995) Detection of metal induced gap states in silicon. Applied Physics Letters, 66 (8). 974-975 doi:10.1063/1.113816
Chaudhari, Pratima, Bhoraskar, S. V., Padgavkar, Swarupa, Bhoraskar, V. N. (1991) Comparison of defects produced by 14‐MeV neutrons and 1‐MeV electrons inn‐type silicon. Journal of Applied Physics, 70 (3). 1261-1264 doi:10.1063/1.349581
 
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