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Wee, S. F., Chai, M. K., Homewood, K. P., Gillin, W. P. (1997) The activation energy for GaAs/AlGaAs interdiffusion. Journal of Applied Physics, 82 (10). 4842-4846 doi:10.1063/1.366345

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Reference TypeJournal (article/letter/editorial)
TitleThe activation energy for GaAs/AlGaAs interdiffusion
JournalJournal of Applied Physics
AuthorsWee, S. F.Author
Chai, M. K.Author
Homewood, K. P.Author
Gillin, W. P.Author
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366345Search in ResearchGate
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Mindat Ref. ID5087294Long-form Identifiermindat:1:5:5087294:7
GUID0
Full ReferenceWee, S. F., Chai, M. K., Homewood, K. P., Gillin, W. P. (1997) The activation energy for GaAs/AlGaAs interdiffusion. Journal of Applied Physics, 82 (10). 4842-4846 doi:10.1063/1.366345
Plain TextWee, S. F., Chai, M. K., Homewood, K. P., Gillin, W. P. (1997) The activation energy for GaAs/AlGaAs interdiffusion. Journal of Applied Physics, 82 (10). 4842-4846 doi:10.1063/1.366345
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

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Chai, M. K., Wee, S. F., Homewood, K. P., Gillin, W. P., Cloitre, T., Aulombard, R. L. (1996) An optical study of interdiffusion in ZnSe/ZnCdSe. Applied Physics Letters, 69 (11). 1579-1581 doi:10.1063/1.117036
Khreis, O. M., Homewood, K. P., Gillin, W. P. (1998) Interdiffusion in InGaAs/GaAs: The effect of growth conditions. Journal of Applied Physics, 84 (1). 232-236 doi:10.1063/1.368079
Gillin, W. P., Dunstan, D. J., Homewood, K. P., Howard, L. K., Sealy, B. J. (1993) Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth. Journal of Applied Physics, 73 (8). 3782-3786 doi:10.1063/1.352884
Bradley, I. V., Gillin, W. P., Homewood, K. P., Webb, R. P. (1993) The effects of ion implantation on the interdiffusion coefficients in InxGa1−xAs/GaAs quantum well structures. Journal of Applied Physics, 73 (4). 1686-1692 doi:10.1063/1.353204
Gillin, W. P., Bradley, I. V., Howard, L. K., Gwilliam, R., Homewood, K. P. (1993) The effects of silicon and beryllium on the interdiffusion of GaAs/ AlxGa1−xAs and InxGa1−xAs/GaAs quantum well structures. Journal of Applied Physics, 73 (11). 7715-7719 doi:10.1063/1.353969
Khreis, O. M., Homewood, K. P., Gillin, W. P., Singer, K. E. (1998) Intermixing in GaAsSb/GaAs single quantum wells. Journal of Applied Physics, 84 (7). 4017-4019 doi:10.1063/1.368583
Gillin, W. P., Perrin, S. D., Homewood, K. P. (1995) Comparative study of silicon nitride encapsulated and phosphine overpressure annealing on the interdiffusion of InxGa1−xAs‐InxGa1−xAsyP1−y heterostructures. Journal of Applied Physics, 77 (4). 1463-1465 doi:10.1063/1.358893
Khreis, O. M., Gillin, W. P., Homewood, K. P. (1997) Interdiffusion: A probe of vacancy diffusion in III-V materials. Physical Review B, 55 (23) 15813-15818 doi:10.1103/physrevb.55.15813
Gillin, W. P., Rao, S. S., Bradley, I. V., Homewood, K. P., Smith, A. D., Briggs, A. T. R. (1993) Vacancy controlled interdiffusion of the group V sublattice in strained InGaAs/InGaAsP quantum wells. Applied Physics Letters, 63 (6). 797-799 doi:10.1063/1.109911
Ghosh, Sandip, Arora, B M, Homewood, K P, Gillin, W P, Khreis, O M, Singer, K E (1998) Contactless electro-reflectance study of interdiffusion in heat-treated single quantum wells. Journal of Physics: Condensed Matter, 10 (43). 9865-9874 doi:10.1088/0953-8984/10/43/031
Gillin, W. P. (1999) Effect of strain on the interdiffusion of InGaAs/GaAs heterostructures. Journal of Applied Physics, 85 (2). 790-793 doi:10.1063/1.369160
 
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